• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.33 no.3C
• /
• pp.271-280
• /
• 2008

M channel near-perfect-reconstruction(NPR) pseudo-QMF banks are a hybrid of conventional pseudo-QMF design and spectral factorization approach where the analysis and synthesis filters are cosine-modulated versions of the prototype-lowpass filter(p-LPF). However, p-LPF H(z) does not have linear-phase symmetry as well as magnitude-distortion optimization since it is obtained by spectral factorization of $2M^{-th}$ band filter $G(z)=z^{-(N-1)}H(z^{-1})H(z)$. A fair amount of attention, therefore, has been focused on the design of filter banks for reducing only alias-cancellation distortion without reconstructed-amplitude distortion. In this paper, we propose a new method for designing linear-phase p-LPF in NPR pseudo-QMF banks, which is based on Maxflat(maximally flat) FIR filters with closed-form transfer function. In addition, p-LPF H(z) is optimized in this approach so that the 2M-channel overall distortion response represented with $G(z)=H^2(z)$ approximately becomes an unit magnitude response. Through several examples of NPR pseudo-QMF banks, it is shown that the peek ripple of the overall magnitude distortion is less than $3.5{\times}10^{-4}\;({\simeq}-70dB)$ and analysis/synthesis filters have the sharp monotone-stopband attenuation exceeding 100 dB.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.3
• /
• pp.67-71
• /
• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.