• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.335-338
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• 2004

We suggest Q-band MEMS MIMIC (Millimeter wave Monolithic Integrated Circuit) HEMT Oscillator using DAML (Dielectric-supported Airgapped Mcrostrip Line) structure. We elevated the signal lines from the substrate using dielectric post, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency. These DAML are composed with heist of $10\;{\mu}m$ and post size with $20\;{\mu}m\;{\times}\;20\;{\mu}m$. The MEMS oscillator was successfully integrated by the process of $0.1\;{\mu}m$ GaAs PHEMTs, CPW transmission line and DAML. The phase noise characteristic of the MEMS oscillator was improved more than 7.5 dBc/Hz at a 1 MHz offset frequency than that of the CPW oscillator And the high output power of 7.5 dBm was measured at 34.4 GHz.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.471-472
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• 2006

The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

• Journal of Life Science
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• v.22 no.9
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• pp.1159-1165
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• 2012

The action of neuronally released ${\gamma}$-aminobutyric acid (GABA) is terminated by uptake into the neurons by GABA transporters (GATs). The mechanism underlying the stabilization and regulation of GAT2 has not yet been elucidated. We used the yeast two-hybrid system to identify proteins that interact with and, thereby, regulate betaine-${\gamma}$-aminobutyric acid transporter 1 (BGT-1/mGAT2). We found an interaction between BGT-1/mGAT2 and Munc-18-interacting proteins (Mints). The "T-H-L" motif at the C-terminal end of BGT-1/mGAT2 was essential for the interaction with Mint2 in the yeast two-hybrid assay. Mint2 bound to the tail region of BGT-1/mGAT2, but not to other GAT members. When co-expressed in HEK-293T cells, Mint2 was co-immunoprecipitated with BGT-1/mGAT2. In addition, we demonstrated the cellular co-localization of BGT-1/mGAT2 and Mint2 in the cells. These results suggest that Mint2 contributes to the regulation of BGT-1/mGAT2.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.135-135
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• 2013

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.191.1-191.1
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• 2008

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.760-767
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAMLs. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAMLs ring resonator is elevated with $10{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about $10\%$ at 60 GHz.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.144-144
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• 2016

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.138-138
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• 2016

• Proceedings of the Korean Magnestics Society Conference
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• 2009.05a
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• pp.40-41
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• 2009