• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.61-66
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• 2011

The miniaturization of electrostatic precipitator is becoming a key element to the success of the efficient electrostatic precipitator due to the limited space allowed to install electrostatic precipitator in subway tunnel. Nowadays, a research on electrostatic precipitator in urban railroad equipment technology is under an active study. Finite element method has been used one of the most popular techniques, but it consumes a lot of time especially in computation iterations. Accordingly, the lumped parameter analysis can be an alternative tool to FEM because of its computation iteration capability with fair accuracy. In this paper, lumped parameter model and the simulation results are presented. In addition, the result of lumped parameter analysis is compared with those obtained from finite element analysis for verification.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.33-41
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• 2011

Due to the recent quantum leaps forward in bio-, nano-, and information-technologies (BT, NT and IT), the precisionization and miniaturization of mechanical and electrical components are in high demand. In particular, the ITrelated equipments that take a great part in our domestic industry are in the area requiring high precision technologies. As a consequence, the researches on the development vibration isolation systems that diminish external disturbance or internal vibration are highly required. Among the components comprising the vibration isolation system, air spring has become on a focal point for the researchers due to its merits. This air spring is able to support heavy loads, keep a low natural frequency despite of having a lower value of stiffness, and control the performance of vibration isolation. However, sometimes the sole use of air spring is in demand due to some economic reasons. Under this circumstance, the damping effect of sole air spring may not enough to reduce sufficient amount of vibration. In this study, the air spring mount system connecting with an external chamber is proposed to increase or control the damping effect. To investigate its damping mechanism, the thermal and dynamic behaviors of the system is examined through a theoretical modeling approach in this part of research. In this approach, thermomechanical and Helmholtz resonator type models are to be employed for the air spring/external chambers and connecting tube system, respectively. The frequency response functions (FRFs) derived from the modeling effort are evaluated with physical parametric values and the effects of connecting tube length on these FRFs are identified through computer simulations.

• Current Optics and Photonics
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• v.2 no.3
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• pp.241-249
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• 2018

We report a midinfrared dual-field-of-view (FOV) optical system design for an airborne electro-optical targeting system. To achieve miniaturization and weight reduction of the system, it has a common aperture and fore-optics for three different spectral wavelength bands: an electro-optic (EO) band ($0.6{\sim}0.9{\mu}m$), a midinfrared (IR) band ($3.6{\sim}4.9{\mu}m$), and a designation laser wavelength ($1.064{\mu}m$). It is free to steer the line of sight by rotating the pitch and roll axes. Our design co-aligns the roll axis, and the line of sight therefore has a fixed entrance pupil position for all optical paths, unlike previously reported dual-FOV designs, which dispenses with image coregistration that is otherwise required. The fore-optics is essentially an achromatized, collimated beam reducer for all bands. Following the fore-optics, the bands are split into the dual-FOV IR path and the EO/laser path by a beam splitter. The subsequent dual-FOV IR path design consists of a zoom lens group and a relay lens group. The IR path with the fore-optics provides two stepwise FOVs ($1.50^{\circ}{\times}1.20^{\circ}$ to $5.40^{\circ}{\times}4.32^{\circ}$), due to the insertion of two Si lenses into the zoom lens group. The IR optical system is designed in such a way that the location and f-number (f/5.3) of the cold stop internally provided by the IR detector are maintained when changing the zoom. The design also satisfies several important performance requirements, including an on-axis modulation transfer function (MTF) that exceeds 10% at the Nyquist frequency of the IR detector pitch, with distortion of less than 2%.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.63-69
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• 2000

The high-$T_c$ Superconducting (HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna, HTS $YBa_2Cu_3O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between $50{\Omega}$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24% in efficiency, and 14.6 dB in the return loss superior of the normal conducting counterpart.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.35-40
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• 2008

This paper proposes a dual-band balun which is based on Wilkinson power divider. By inserting $\lambda/2$ transmission line between port 2 and 3, this balun shows good matching at all ports and improved isolation. We use matamaterial(CRLH, D-CRLH) structure for a miniaturization of the circuit implementation and dual-band operation at TDMB frequency range(195MHz) and DVB-H frequency range(670MHz). The proposed balun is designed with return loss larger than -12.98dB at all port, and isolation larger than -12.4dB, the amplitude imbalance between output signals less than 0.08dB, also phase differences of outputs less than $2.8^{\circ}$.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.61-71
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• 1999

The recent trend toward higher frequencies, miniaturization and lower-cost in wireless communication equipment is demanding high density packaging technologies such flip chip interconnection and multichip module(MCM) as a substitute of conventional plastic package. With analyzing the recently reported research results of the RF flip chip, this paper presents the technical issues and advantages of RF flip chip and suggest the flip chip technologies suitable for the development stage. At first, most of RF flip chips are designed in a coplanar waveguide line instead of microstrip in order to achieve better electrical performance and to avoid the interaction with a substrate. Secondly, eliminating wafer back-side grinding, via formation, and back-side metallization enables the manufacturing cost to be reduced. Finally, the electrical performance of flip chip bonding is much better than that of plastic package and the flip chip interconnection is more suitable for Transmit/Receiver modules at higher frequency. However, the characterization of CPW designed RF flip chip must be thoroughly studied and the Au stud bump bonding shall be suggested at the earlier stage of RF flip chip development.

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.241-248
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• 1998

In accordance with tendency to miniaturization and high frequency operation of electronic products, extensive efforts of miniaturizing magnetic devices such as inductors, transformers and magnetic sensors are being made. In order to study on fabrication and characteristic of micro-magnetic devices, we carried out two sets of experiments. One is to develop a magnetic film that is suitable for high frequency operation, and the other is to develop the fabrication processes for realizing the micro-coil with meander shape. Magnetic films were composed of FeTa(N,C) fabricated by DC magnetron sputtering system. Their microstructures were nanocrystalline structure and magnetic properties showed Bs:13~17 kG, Hc:0.1~0.2 Oe and $\mu$':2000~4000. Cu coil pattern fabricated by selective electroplating process showed good electrical conductivity. In the case of air core inductors, inductance (L) of 50 nH, resonance frequency $(f_R)$ of 700 MHz, and quality factor (Q) of 30 at 200 MHz could be obtained. In the case of close type magnetic inductors, inductance (L) of 150 nH, resonance frequency $(f_R)$ of 100 MHz, and quality factor (Q) of 4 at 10~30 MHz could be obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.5C
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• pp.395-402
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• 2008

In this paper, an I/Q channel 12bits 40MS/s Pipeline Analog to Digital Converter that is able to apply to WLAN/WMAN system is proposed. The proposed ADC integrates DLL based duty-correction circuit which corrects the fluctuations in the duksty cycle caused by miniaturization of CMOS devices and faster operating speeds. It is designed as a 1% to 99% input clock duty cycle could be corrected to 50% output duty cycle. The prototype ADC is implemented in a $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process and dissipates 184mW at 1.8V single supply The SNDR of the proposed 12bit ADC is 52dB and SFDR of 59dBc(@Fs=20MHz, Fin=1MHz) is measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.143-152
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• 2001

A method for miniaturization of microstrip patch antenna without degrading its radiation characteristics is investigated in this paper. It involves perforating the patch to form a microstrip square-ring antenna, and it's BW enhancement is investigated numerically and experimentally. A ring geometry introduces additional parameters to the antenna, and those are used to control impedances, resonance frequencies, and bandwidths. For a single square ring antenna, an increase of the size of perforation increases its input impedance, decreases the resonance frequency, and bandwidths. But it affects little on directivity of the antenna. To match the antenna to a transmission line and also enhance its bandwidth, the ring is stacked by a square patch or another square ring. Also numerically simulated results by the IE3D, and experimental data are compared for proof.