• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.97-103
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• 2007

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

• Journal of Information Technology Services
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• v.12 no.1
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• pp.51-67
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• 2013

Mobile Instant Messenser (MIM) Market With the market is enlarging and attracting more and more companies. With the market expanding and number of users increasing, the competition in this area will be fierce. In order to gain competitive advantage, it is important to develop a strategy to maximize user value and to grasp the continuous usage intention of users. However, there are currently not enough researches done in this field. Therefore, this paper to study the effects of network externalities and perceived experiential value on perceived usefulness, user satisfaction, and continuous usage intention. The research results showed that the perceived experiential value and vertical compatibility significantly affected user satisfaction, but the perceived network size did not. The perceived network size and vertical compatibility did not affect the perceived usefulness. Also, the economic value, which is a sub-factor of the perceived experiential value, did not affect the perceived usefulness, but the functional value and hedonic value did significantly. The perceived network size significantly affected continuance usage intention, but the perceived network compatibility did not.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.05a
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• pp.209-212
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• 2001

It is known that the mim forming processes show somewhat different phenomena compared with the conventional metal forming processes, namely, the size effect, enhanced friction effect and etc. Such typical phenomena, however, are not predicted by the conventional finite element analysis, which has been an efficient numerical tool to predict the metal forming processes. It is due to the fact that the constitutive relations used does not describe the microstructural characteristics of the materials. In the present investigation, the finite element formulation using the rate-dependent rigid plastic crystal plasticity model of the face-centered cubic materials is conducted to predict the micro mechanical behaviors during the mim forming processes. The finite element analysis, however, provides mesh-dependent solutions for the intragranular deformations. Therefore, the couple stress energy is additionally introduced into the variational principle and formulated within the framework of the rigid plastic finite element method to obtain mesh-independent solutions. Micro deformations of single crystal and bicrystal with various orientations are calculated to show the potential of the developed formulation.

• Journal of Powder Materials
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• v.5 no.2
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• pp.145-153
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• 1998

W-Cu alloy is attractive to thermal managing materials in microelectronic devices because of its good thermal properties. The metal injection molding (MIM) of W-Cu systems can satisfy the need for mass production of the complex shaped W-Cu parts in semiconductor devices. In this study, the application of MIM process of the mechanically alloyed (MA) W-Cu composite powders, which had higher sinterability were investigated. The MA W-Cu powders and reduction treated (RT) powders were injected by using of the multicomponent binder system. The multi-stage debinding cycles were adopted in $N_2$ and $H_2$ atmosphere. The isostatic repressing treatment was carried out in order to improve the relative density of brown parts. The brown part of RT W-Cu composite powder sintered at 110$0^{\circ}C$ had shown the higher sinterability compared to that of MA powder. The relative sintered density of all specimens increased to 96% by sintering at 120$0^{\circ}C$ for 1 hour. The relationship between green density and the sintering behavior of MA W-Cu composite powder was analyzed and discussed on the basis of the nanostructured characteristics of the MA W-Cu composite powder.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.761-763
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• 2001

Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Dendrimer can be made with high regularity and controlled molecular weight. Peculiar features of the dendritic geometry are the large number of end groups as well as the shape persistence in higher generations, approaching spherical geometry. One of the most peculiar characteristics of dendritic macromolecules is their controlled molecular structure and orientation, which means that they have a practical application in achieving a highly organized molecular arrangement. We attempted to fabricate a G4-48PyA dendrimer LB films containing 48 pyridinealdoxime functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. And we have studied the electrical properties of the ultra-thin dendrimer LB films. The electrical properties of the ultra-thin dendrimer LB films were investigated by studying the current-voltage(I-V) characteristics of metal/dendrimer LB films/metal (MIM) structure. And rectifying behavior of the devices was occurred in applied field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.362-365
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• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.