• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Journal of Powder Materials
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• v.20 no.2
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• pp.125-128
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• 2013

Magnetic and dielectric properties of rubber composites are controlled by using two kinds of high-permeability metal particles with different electrical conductivity (Sendust, Permalloy), and their effect on microwave absorbance has been investigated, focusing on the quasi-microwave frequency band (0.8-2 GHz). Noise absorbing sheets are composite materials of magnetic flake particles of high aspect ratio dispersed in polymer matrix with various filler amount of 80-90 wt.%. The frequency dispersion and magnitude of complex permeability is almost the same for Sendust and Permalloy composite specimens. However, the complex permittivity of the Permalloy composite (${{\varepsilon}_r}^{\prime}{\simeq}250$, ${{\varepsilon}_r}^{{\prime}{\prime}}{\simeq}50$) is much greater than that of Sendust composite (${{\varepsilon}_r}^{\prime}{\simeq}70$, ${{\varepsilon}_r}^{{\prime}{\prime}}{\simeq}0$). Due to the large dielectric permittivity of Permalloy composite, the absorbing band is shifted to lower frequency region. However, the investigation of impedance matching reveals that the magnetic permeability is still small to satisfy the zero-reflected condition at the quasi-microwave frequency band, resulting in a small microwave absorbance lower than 10 dB.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.146-150
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• 2001

Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. S-parameters of on-chip and substrate were separately measured in the frequency range of 200 MHz to 20 GHz using a microwave network analyzer HP8510 and cascade probe. And the cascade transmission matrix conversion was performed. The same measurements and conversion techniques were conducted on the assembled test chip and substrate at the same frequency range. Then impedance values in ACF flip-chip interconnection were extracted from cascade transmission matrix. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of SiO$_2$filler to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. High frequency behavior of metal Au stud bumps was investigated. The resonance frequency of the metal stud bump interconnects is higher than that of ACF flip-chip interconnects and is not observed at the microwave frequency band. The extracted model parameters of adhesive flip chip interconnects were analyzed with the considerations of the characteristics of material and the design guideline of ACA flip chip for high frequency applications was provided.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.200-200
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• 2011

Although the cut-off probe, a precise measurement method for the electron density, is widely used in the industry, the physics on the wave spectrum of the cut-off is not understood yet, only cut-off point frequency containing the information of electron density has been analyzed well. This paper analyzes the microwave frequency spectrum of the cut-off probe to see the physics behind using both microwave field simulation (CST Microwave Studio) and simplified circuit simulation. The result shows that the circuit model well reproduces the cut-off wave spectrum especially in the low frequency regime where the wavelength of the driving frequency is larger than the characteristic length and reveals the physics of transmission characteristics with frequency as resonances between vacuum, plasma and sheath. Furthermore, by controlling the time domain in solver of the microwave simulator, the cut-off like transmission peaks above the cut-off frequency which has been believed as cavity effect is verified as chamber geometry effect. The result of this paper can be used as the basis for the improvement of cut-off probe.

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.5
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• pp.818-824
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• 2011

In this paper, we proposed a phase noise model of a frequency synthesizer for a radar system. Especially, it was proposed a phase noise model in a DAS(Direct Analog Synthesizer) and a frequency up converter system using Leeson's model. The proposed phase noise model was derived from the measurement data of model 1 and evaluated by adapting to model 2 and model 3 frequency synthesizers. The prediction phase noise by modeling was totally matched to the measured data and the effective analysis of the phase noise was done in a frequency synthesizer and a frequency converter of radar system.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.55 no.12
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• pp.526-533
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• 2006

In this paper, we presented the synchronization module between RF shower system and RFID Reader to extend interrogating range on Mobile RFID system, Costas Loop and FPLL(Frequency/phase Lock Loop) were used. We achieved compromised range of 3MHz locking frequency, 1ms locking time and figured out remarkable Hopping frequency of the Reader. The prototype of the new designed RFID system has been tested with ISO18000-6 type-B Tag. The read range between designed RFID Reader and Tag has been measured, it increased triple times by adjusting the Shower system output level.

• Current Optics and Photonics
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• v.4 no.4
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• pp.361-367
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• 2020

An approach based on an integrated photonic Ti:LiNbO₃ Y branch has been proposed, designed, and analyzed for the microwave instantaneous frequency measurement (IFM). By designing the Y branch with length L = 6545 ㎛ and refractive index N_TE - N_TM = 0.0764, a complementary optical filter with free spectral range (FSR) of 600 GHz is constituted, which results in a maximum measureable frequency of 300 GHz being obtained. Theoretical analysis on the temperature stability of the Ti:LiNbO₃ Y branch shows that the FSR variation of the complementary filter is 0.3% for the temperature change of 100 K, which indicates that the IFM approach will have a better stability. All these results demonstrate that the proposed IFM approach has potential capability to be used for the increasingly higher microwave IFM with better stability.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.160-165
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• 2002

High-frequency dielectric and microwave absorbing properties have been investigated in ferroelectric materials (BaTiO$_3$(BT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$-xPbTiO$_3$(PMN-PT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$O$_3$-xPb(Zn_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$(PMN-PZN) for the aim of thin microwave absorbers in the frequency range of mobile telecommunication. The specimenns are prepared by conventional ceramic processing and complex permittivity has been measured by transmission/reflection method. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave range and their domiant loss mechanism is considered to be domain wall relaxation. The microwave absorbance of BT 0.9PMN-0.1PT, and 0.8PMN-0.2PZN specimen (determined at 2) are found to be 99.5% (at a thickness of 4.5 mm), 50% (2.5 mm), and 30% (2.5 mm), respectively. It is suggested that PMN-PT or PMN-PZN ferroelectrics are good candidate materials for the spacer of λ/4 absorber. The use of ferroelectric materials is effective in reducing the thickness of absorber with their advantage of high dielectric constant.

• Current Optics and Photonics
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• v.2 no.1
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• pp.96-100
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• 2018

A tunable low-phase-noise microwave generation structure that utilizes an optoelectronic oscillator (OEO) and a fiber Bragg grating (FBG) is proposed and experimentally demonstrated in this article. This structure has no particular requirement for the band width of the laser, and its tunability is realized through adjusting the central frequency of the tunable FBG. A detailed theoretical analysis is established and confirmed via an experiment. A high-purity microwave signal with a frequency tunable from 6 to 12 GHz is generated. The single-sideband phase noise of the generated signal at 10.2 GHz is -117.2 dBc/Hz, at a frequency offset of 10 kHz.