• Title/Summary/Keyword: microwave cavity

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On the Method of Measuring the Mobility using the Microwave by the Hall Effect in the semiconductor (마이크로파를 이용하여 반도체내의 Hall에 의한 이동도측정방법)

  • 허영남
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.8 no.2
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    • pp.54-62
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    • 1983
  • The electric characteristics of semiconductor materials can be found by way of various methods, of which the measurement of the carrier mobility is thought to be of great importance. There exist some mobilty measurements, but the measurement based on Hall effect is the most widely uesd. In this paper is adopted the mobility measurement of semiconductor by the use of cylindrical eavity operated in the same shape as TE modes. It is hoped that the resultant values of measurement, the structure of measurement circut, cavity design and the raising of relevant problems may give much help to those who may interested in this field.

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Design of rectangular microstrip patch antenna for receiving a microwave power propagating in a rectangular waveguide (직사각형 도파관 속으로 전파하는 초고주파 전력 수신용 사각형 마이크로스트립 패치 안테나 설계)

  • 박동국
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.1 no.2
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    • pp.131-136
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    • 1997
  • In this paper, the input impedance of coaxial fed rectangular microstrip patch antenna located inside rectangular waveguide is calculated by using the cavity model and the mode excited in the waveguide by the patch antenna. The return loss and efficiency of the patch antennas as a function of feed position in. free space and in waveguide are calculated and compared. The maximum efficiency of the antennas in waveguide and in free space are obtained at different feed position.

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Resonant Transmission of a Rectangular Waveguide Probe with H-type Small Aperture (H-형태 소형 개구를 가진 직사각형 도파관 탐침의 공진 투과)

  • Ko, Ji-Hwan;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.12
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    • pp.1198-1204
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    • 2013
  • As a microwave near field probe for near field scanning optical microscope(NSOM) system, H-shaped(ridge type) small aperture is proposed and its performances from the viewpoints of the transmission efficiency(transmission cross section) and spatial confinement(beam spot size) are compared with those of the previous narrow rectangular aperture type. While the transmission efficiencies are comparable to each other for the two structures, the transmitted beam spot size for the proposed H-shaped aperture is much smaller than that for the previous rectangular aperture. This strong point of the H-shaped aperture is expected to significantly improve near-field optical applications such as optical data storage, nanolithography and nanomicroscopy. It is also observed that the transmission efficiency can be improved if the coupling aperture is implemented in the type of the transmission cavity.

The Analysis of a Coaxial-to-Waveguide Transition Using FDTD with Cylindrical to Rectangular Cell Interpolation Scheme

  • Yu, Kyung-Wan;Kang, Sung-Choon;Kang, Hee-Jin;Choi, Jae-Hoon;Kim, Jin-Dae
    • ETRI Journal
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    • v.21 no.2
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    • pp.1-8
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    • 1999
  • We analyze the characteristics of a coaxial-to-waveguide transition based on the finite difference time domain (FDTD) method with the cylindrical to rectangular cell interpolation scheme. The scheme presented in this paper is well suited for the analysis of a microwave device with a probe near waveguide discontinuity because perfect TEM mode can be generated inside the coaxial cable by using the cylindrical cell. The scattering parameters of a designed Ka-band transition are evaluated and compared with those of commercially available software, High Frequency Structure analysis Simulator (HFSS) and measured data. There exists good agreement between the measured and calculated data. In order to prove an accuracy of the interpolation scheme, a coaxial to waveguide transition with a disk-loaded probe is analyzed by the present approach and the results of this analysis are compared with measured data. Comparison shows that our results match very closely to those of measurement and other approaches. The method presented in this paper can be applied to analyze the characteristics of a probe excited cavity, coaxial waveguide T-Junctions, and so on.

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Low-Phase Noise Oscillator Using Substrate Integrated Waveguide and Complementary Split Ring Resonator (기판 집적형 도파관(SIW)과 Complementary Split Ring Resonator(CSRR)로 구현한 저위상 잡음 발진기 설계)

  • Park, Woo-Young;Lim, Sung-Joon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.4
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    • pp.468-474
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    • 2012
  • A low phase-noise microwave oscillator is presented by a substrate integrated waveguide(SIW) loading a complementary split ring resonator(CSRR) in this paper. The unloaded $Q$-factor of the SIW cavity is increased by loading a complementary split ring resonator(CSRR) and its value exhibits 1960. It is theoretically and experimentally demonstrated that the proposed circuit generates 11.3 dBm of output power at 9.3 GHz and a phase-noise of -127.9 dBc/Hz at 1-MHz offset.

An Experimental Study on the Tuning Characteristics of a Re-enterant cavity resonator (Re-enterant 공동 공진기의 주파수 가변 특성에 관한 실험적 고찰)

  • 김진구;홍의석
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.12 no.2
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    • pp.133-138
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    • 1987
  • In this paper the tuning characteristics of resonant frequencies are experimentally studied through the variation of the length of the inner conducting rod in a re-enterant eavity resonator. The re-enterant eavity resonator consists of a coaxial cable and a cylindrical wave guide. The length of the inner conducting rod can be varied to the longitudinal direction. The resonant frequencies of TMonq modes are measured according to the arbitrary length. In order to verify the propriety of experimental results, experimental results are compared with other theoretical results. The results in this paper can be applied to wave meter and resonant circuit of amplifier. They will be use to vary resonant frequencies of a dielectric resonator in MIC and filter.

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Gain characteristics of SQUID-based RF amplifiers depending on device parameters

  • Lee, Y.H.;Yu, K.K.;Kim, J.M.;Lee, S.K.;Chong, Y.;Oh, S.J.;Semertzidis, Y.K.
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.1
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    • pp.10-14
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    • 2019
  • Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

Effects of post-annealing temperature of CeO$_2$ buffer layers on the surface morphology, structures and microwave properties of YBa$_2$Cu$_3$O$_{7-{\delta}}$ films on sapphire

  • Yang, W.I.;Lee, J.H.;Ryu, J.S.;Ko, Y.B.;Chung, Y.S.;Hur, Jung;Lee, Sang-Young
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.201-206
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    • 2000
  • Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

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