On the Method of Measuring the Mobility using the Microwave by the Hall Effect in the semiconductor

마이크로파를 이용하여 반도체내의 Hall에 의한 이동도측정방법

The electric characteristics of semiconductor materials can be found by way of various methods, of which the measurement of the carrier mobility is thought to be of great importance. There exist some mobilty measurements, but the measurement based on Hall effect is the most widely uesd. In this paper is adopted the mobility measurement of semiconductor by the use of cylindrical eavity operated in the same shape as TE modes. It is hoped that the resultant values of measurement, the structure of measurement circut, cavity design and the raising of relevant problems may give much help to those who may interested in this field.