• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.989-992
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• 2008

X-ray lithography is one of the most powerful processes in the fabrication of nano/micro structures with a high aspect ratio. This process enables the fabrication of ultra-thin barrier ribs for PDP using X-ray sensitive paste. In this paper, organic material including photo-monomers, photo-oligomers, binder polymer and additives as well as inorganic powders with different size were optimized to fabricate high aspect ratio barrier rib pattern for PDP.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.2
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• pp.33-39
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• 2003

A new microlens fabrication technique, the excimer laser lithography is developed. This bases on the pulsed laser irradiation and the transfer of a chromium-on-quartz reticle on to the polymer surface with a proper projection optics system. An excimer laser lithography system with 1/4 and 1/20 demagnification ratios was constructed first, and the photoablation characteristics of the PMMA and Polyimide were experimentally examined using this system. For two different shapes of microlenses, a spherical lens and a cylindrical lens, fabrication techniques were investigated. One for the spherical lens is a combination of the mask pattern projection and fraction effect. The other for the cylindrical lens is a combination of the mask pattern projection and the relative movement of a specimen. The result shows that various shapes of micro optical components can be easily fabricated by the excimer laser lithography.

• Fibers and Polymers
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• v.3 no.3
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• pp.113-119
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• 2002

Nanoimprint lithography (NIL) is a nanofabrication method known to be a low cost method of fabricating nanoscale patterns as small as 6 m. This study is focused on understanding physical phenomena in the embossing of nano/micro scale structures with 100 nm minimum feature size. We present the effects of capillary force and width of stamp groove on flow behavior at the embossing stage through numerical experimentation. We also compare our numerical results with previous experimental results and discuss our results.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.6
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• pp.558-564
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• 2009

To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.303-303
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• 2007

Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.284-287
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• 2004

Micro-structures fabricated by X-ray lithography are largely affected by doses, development conditions and other factors. For these reasons, PMMA development rates and its surface profiles under various development conditions were obseued. Development rates were measured in the rage from 1 to 6 $kJ/cm^3$ using the 9C1 white beamline of Pohang light source(PLS). In this experiment, we observed that development rates of stacked PMMA sheet using Si filter were relatively higher than that of not using Si filter. Furthermore, development rates in condition with the acoustic agitation(1 MHz, 3.67 $W/cm^3$) were twice than that in dipping condition with $35^{\circ}C$ developer considering the PMMA sheets-substrate bond strength

• Journal of the Korean Society for Precision Engineering
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• v.24 no.12
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• pp.128-135
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• 2007

Micro-channels for a wave micropump have been fabricated using the Stereolithography and UV Photolithography. The micro-channel with a channel height of $500\;{\mu}m$ was fabricated with stereolithography. UV photolithography was used for producing micro-channels with a channel length less than $100\;{\mu}m$. The fabrication process data including spinning rpm, pre-bake and post-bake time, and develop time for single layer and multiple layer 3D micro-structures using SU-8 photo resist are experimentally found. A film mask printed with a 40,000 dpi laser printer was used for UV lithography and micro-structures in the order of tens of micrometers in dimension were successfully fabricated.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1881-1883
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• 2001

We manufactured a micro CPL by LlGA process, a new conceptual ultra-fine and precise forming method, using X-ray lithography process. We fabricated a BN X-ray mask having properties of good X-ray transmittance and large mechanical strength. Micro CPL was manufactured by dividing into an upper plate and a low plate. Each of plates was bonded by Ag paste screen printing. The upper plate was fabricated on glass wafer to observe flow and phase transformation of cooling solution. The lower plate was manufactured by Cu electroplating for good heat transmission. Precision of inner Parts, micro pin and micro channel, of manufactured micro CPL is under ${\pm}2{\mu}m$.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.234-237
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• 2011

This paper presents a study into pH Indicator-Embedded hydrogel micro-particles which are encoded various shapes according to the captured indicator. We incorporate various pH indicators into a photo-curable hydrogel, PEG-DA(Poly(ethylene glycol) diacrylate). Using the latest fluidic lithography techniques, we can easily fabricate variously patterned hydrogel particles based on in-situ photopolymerization of the PEG-DA in a micro-fluidic channel. The shape of the particle is related to the pH indicator inside the particle. We demonstrate that the micro pH sensors change their colors according to the pH levels. The micro pH sensors have various characteristics that are related to the curing time, particle size, etc. By changing these conditions, we can adjust the long term stability and reaction time of the hybrid micro pH sensors.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.