• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1292-1299
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• 2003

In this paper, we fabricated new GaAs-based dielectric-supported air gapped microstriplines(DAMLs) using the surface MEMS and the LPF for Ka-band using the fabricated DAMLs. We elevated the signal lines from the substrate, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency band with wide impedance range. We fabricated LPF with DAMLs for Ka-band. Due to reducing the dielectric loss of DAMLs, the insertion loss of LPF can be reduced. Miniature is essential to integrate LPF with active devices, so that we fabricated LPF with the slot on the ground to reduce the size of the LPF. We compared a characteristic to LPF with the slot and LPF without the slot.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.152-158
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• 2001

In this paper, we have developed an electro discharge machine for micro drilling driven by a voice coil actuator. Because the voltage signal of the electro-discharging circuit shows a lot of peaks and valleys, the active type low-pass filtering technique is adopted to get the average of the signal. Since the motion of the voice coil is precisely controlled by the error value between the object voltage value and the measured one, it is possible to prevent the mechanical contact between the rotating electrode and the workpiece and to maintain the appropriate machining conditions during the process. The electro-chemical machining technology was also adopted to make small diameter electrodes. Pure water is used as a dielectric. The machining procedure is performed to verify the feasibility of the developed system. It takes about 10 seconds to drill the ${\phi}m$100${\mu}m$ hole to the 100${\mu}m$ thickness stainless steel plate. The machining time depends on the values of the resister and the capacitor. There may exist the optimal values of time constant and the tendency is displayed In the appendix.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.423.1-423.1
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• 2016

Polyvinylidene fluoride (PVDF) has drawn much attention due to its many advantages. PVDF shows high mechanical strength and flexibility, thermal stability, and good piezoelectricity enabling its application to various fields such as sensors, actuators, and energy transducers. Further studies have been conducted on PVDF in the form of thin films. The thin films exhibit different ionic conductivity according to the number of pores within the film, letting these films to be applied as electrolytes or separators of batteries. Porous PVDF membranes are also easily processed, usually made by using electrospinning. However, a large portion of researches were conducted using PVDF membranes produced by far field electrospinning, which is not a well-controlled experimental method. In this paper, we use near field electrospinning (NFES) process for more controlled, small-scaled, mesh type PVDF structures of nano to micro fibers fabricated by controlling process parameters and investigate the properties of such membranous structures. These membranes vary according to geometrical shape, pore density, and fiber thickness. We then measured the mechanical strength and piezoelectric characteristic of the structures. With various geometries in the fiber structures and various scales in the fibers, these types of structures can potentially lead to broader applications for stretchable electronics and dielectric electro active polymers.

• Journal of Environmental Science International
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• v.26 no.6
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• pp.711-717
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• 2017

Dielectric Barrier Discharge (DBD) plasma is a new technique for use in environmental pollutant degradation, which is characterized by the production of hydroxyl radicals as the primary degradation species. Due to the short lifetime of the chemically active species generated during the plasma reaction, the dissolution of the plasma gas has a significant effect on the reaction performance. The plasma reaction performance can be enhanced by combining the basic plasma reactor with a homogenizer system in which the bubbles are destroyed and turned into micro-bubbles. For this purpose, the improvement of the dissolution of plasma gas was evaluated by measuring the RNO (N-dimethyl-4-nitrosoaniline, an indicator of the generation of OH radicals). Experiments were conducted to evaluate the effects of the diameter, rotation speed, and height of the homogenizer, pore size, and number of the diffuser and the applied voltage on the plasma reaction. The results showed that the RNO removal efficiency of the plasma reactor combined with a homogenizer is two times higher than that of the conventional one. The optimum rotor size and rotation speed of the homogenizer were 15.1 mm, and 19,700 rpm, respectively. Except for the lowest pore size distribution of $10-16{\mu}m$, the pore size of the diffuser showed little effect on RNO removal.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.218-224
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• 2003

This paper describes a novel MEMS integration technique on a CMOS chip. MEMS integration on CMOS circuit has many advantages in view of manufacturing cost and reliability. The surface topography of a CMOS chip from a commercial foundry has 0.9 ${\mu}{\textrm}{m}$ bumps due to the conformal coating on aluminum interconnect patterns, which are used for addressing each MEMS element individually. Therefore, it is necessary to achieve a flat mirror-like CMOS chip fer the microelectromechanical system (MEMS) such as micro mirror array. Such CMOS chip needs an additional thickness of the dielectric passivation layer to ease the subsequent planarization process. To overcome a temperature limit from the aluminum thermal degradation, this study uses RF sputtering of silicon nitride at low temperature and then polishes the CMOS chip together with the surrounding dummy pieces to define a polishing plane. Planarization reduces 0.9 ${\mu}{\textrm}{m}$ of the bumps to less than 25 nm.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.354-361
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• 2008

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.153-160
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• 1983

This study was carried out to research the change of mineral phases and the characteristics(apparent specific gra-vity water absorption firing shrinkage modulus of rupture thermal expansion and specific dielectric constant) of the sintered bodies manufactured by kaolin and limestone. Samples were composed of the same theoretical composition as it of anorthite and fired up to 145$0^{\circ}C$ Investigated the change and micro-structure of the mineral phases by XRD and SEM the characterisdtics of the sintered bodies by TMA Automatic Capacitance Bridge and etc. The results were as follow. 1. Reactions of sintering are occurred between 860-95$0^{\circ}C$ and 1200-138$0^{\circ}C$ and state of bloating is occurred at 1410-145$0^{\circ}C$ 2. For the inclusion of feldspar and its fine particles of materials the temperature of producing and collapsing is decreased. 3. Pseudo-wollastonite and gehlenite are formed about 95$0^{\circ}C$ 4. At 114$0^{\circ}C$ anorthite are begin to forming and increase continuously to 138$0^{\circ}C$. Above 141$0^{\circ}C$ content of anorthite are decreased. 5. The variations of bending strength with sintering temperature reflect similar trend of sintered contraction and in-crease continuously from 120$0^{\circ}C$. At 145$0^{\circ}C$ reached about 680kg/cm2. 6. Specific dielectric constant$($\varepsilon$_s)$ of specimen sintered at 141$0^{\circ}C$ is 7.12 and that value is most favorable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.