• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• ETRI Journal
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• 제20권2호
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• pp.241-249
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• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.528-528
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• 2012

Recently, atmospheric pressure plasmas attract lots of interests for the useful applications such as surface modification and bio-medical treatment. In this study, a particle-in-cell Monte Carlo collision (PIC-MCC) simulation was adopted to investigate the discharge characteristics of a planar micro dielectric barrier discharge (DBD) with a driving frequency from 13.56 MHz to 162.72 MHz and with a gap distance of 80 micrometers. The variation of frequency, in the change in the electron energy probability function (EEPF). Through the relation between the ion trajectories and the frequency, results in the change of EEPFs is achievable with the turning point of frequency mode. Therefore, it is possible to categorize the efficient operation range of DBDs for its applications by controlling the interactions between plasmas and neutral gas for the generation of preferable radicals.

• Applied Microscopy
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• 제46권4호
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• pp.227-237
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• 2016

This investigation deals with the process of field electron emission from composite microemitters. Tested emitters consisted of a tungsten or carbon-fiber core, coated with a dielectric material. Two coating materials were used: (1) Clark Electromedical Instruments Epoxylite resin and (2) Epidian 6 Epoxy resin (based on bisphenol A). Various properties of these emitters were measured, including the current-voltage characteristics, which are presented as Fowler-Nordheim plots, and the corresponding electron emission images. A field electron microscope with a tip (cathode) to screen (anode) distance of 10 mm was used to electrically characterize the emitters. Measurements were carried out under ultra-high vacuum conditions with a base pressure of $10^{-6}$ Pascal ($10^{-8}$ mbar).

• 전자공학회논문지A
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• 제29A권1호
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.372-377
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• 2001

Piezoelectric Fiber Composites with Interdigitated Electrodes (PFCIDE) were previously introduced as an alternative to monolithic wafers with conventional electrodes for applications of structural actuation. This paper is an investigation into the performance improvement of piezoelectric fiber composite actuators by changing the matrix material. This paper presents a modified micro-electromechanical model of a piezoelectric fiber/piezopolymer matrix composite actuator with interdigitated electrodes (PFPMIDE). Various concepts from different backgrounds including three-dimensional linear elastic and dielectric theories have been incorporated into the present linear piezoelectric model. The rule of mixture and the modified method to calculate the effective properties of fiber composites are extended to apply to the PFPMIDE model. The new model is validated comparing with available experimental data and other analytical results.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 3rd Korea-Japan Advanced Semiconductor Packaging Technology Seminar
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• pp.183-192
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• 2001

1- Buildup PCB technology is utilized to a bare chip attach substrate technology for packaging of semiconductor chip 2- Requirement for the substrate design rule is described in SIA International Technology Roadmap for Semiconductor. 3- There are seven fabrication methods of build-up technology. 4- Coating and lamination for resin and photo, and laser for micro via hope processes are available. Below $50\mu\textrm{m}$ in diameter is possible. 5- Fine pitch lines down to $30\mu\textrm{m}$ can be achieved by pattern plating with better electrical property. 6- Dielectric loss reduction is a key material improvement item for next generation build-up technology. 7- High band width up to 512 GB/s is possible with current wiring groundrule.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1406-1407
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• 2008

In this paper, a micro balanced filter in magnetically coupled LC resonators is proposed, designed, simulated by using FR-4 PCB substrate for low cost, small volume IEEE 802. 11a wireless LAN application. Two pair of coupled LC resonators using magnetic coupling of embedded inductors are applied to obtain bandpass transmission response and improve their phase and magnitude imbalance characteristics. In addition, high dielectric composite film is applied to fabricate the high Q MIM capacitors with small size and high capacitance density. It has an insertion loss of 1.4 dB, a return loss of 10 dB, a phase imbalance of 0.25 degree, and magnitude imbalance of 0.17 dB at frequency bandwidth of 200 MHz ranged from 5.15 GHz to 5.35 GHz, respectively. The proposed balanced filter has a small volume of $1.1mm{\times}1.3mm{\times}0.6mm$ (height).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.227-230
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• 2002

New polishing technique for small parts has been tried out using the principle of particle electromechanics. Common fine abrasives such as alumina, diamond, silicon carbide are dielectric materials which are polarized under an electric field, and a non-uniform electric field makes abrasive particles translate along the field line. Using this principle, We make abrasive particles aggregate in the vicinity of the micro tool which is fir the surface finishing of a small part without contact with it. The behavior of particles is optically measured, and the machined depth of glass is examined.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1749-1751
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• 1997

AC PDP with surface micro discharge has a structure that all discharge electrodes are arranged on the front glass panel, and the rear glass panel merely serves as a cover glass to form the micro discharge space. The relationships between the dischage voltage and the structure among such as electrode width, distance between electrodes, discharge space gap, and dielectric layer width are investigated.