• Title/Summary/Keyword: micro device

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A Development of Automation System of Auto-Recognition for Device Modules using Micro-Processing Unit (MPU를 이용한 디바이스 모듈 자동 인식 자동화 시스템의 개발)

  • Lin, Chi-Ho
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.5 no.3 s.11
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    • pp.24-28
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    • 2006
  • This paper proposed design and implementation of automation system that recognize device module boards automatically that are connected on main control board. The system of this paper is divided to main board and device module boards, and the main board is designed a board by slot structure. The slot structure is possible a extension for upgrade and addition of board ability. Besides, it is easier a establishment and disjointing because it recognizes automatically a device board. The proposed system in this paper compares with K10S1 PLC. The result shows an advantage of extensibility and ability, and it is reduced expense and period for development.

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Synthesis of Flake Type Micro Hollow Silica Using Mg(OH)2 Inorganic Template

  • Lee, Ji-Seon;Noh, Kyeong-Jae;Moon, Seong-Cheol;Lee, Young-Chul;Lee, Seong-Eui
    • Journal of the Korean Ceramic Society
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    • v.54 no.3
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    • pp.222-227
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    • 2017
  • Flake-type micro hollow silica was synthesized by precipitation method using an $Mg(OH)_2$ inorganic template and sodium silicate and ammonium sulfate as the silica precursors. We investigated the effects of the silica precursor concentration on the shape, shell thickness, and surface of the hollow silica. When the concentration of the silica precursor was 0.5 M, the hollow silica had a smooth and translucent thin shell, but the shell was broken. On the other hand, the shell thickness of the hollow silica changed in the range of 12 nm to 18 nm with the increase of the precursor concentration from 0.7 M to 1.1 M. Simultaneously, unintended spherical silica satellites were created on the shell surface. The number of satellites and the size rose according to the increased concentration of silica precursor. The reason for the formation of spherical silica satellites is that the $NH_4OH$ nucleus generated in the synthesis of hollow silica acted as another silica reaction site.

Parameter identification for the bubble point measurement of Liquid Acquisition Device (액체포집장치의 기포점 측정을 위한 변수식별)

  • Jeon, Sang-Eon;Park, Soo-Hyung;Byun, Yung-Hwan;Jung, Young-Suk;Oh, Seung-Hyub
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2012.05a
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    • pp.416-423
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    • 2012
  • Liquid acquisition device in the liquid propellant supply system is required to protect entrance of gas bubble into the propulsion system. The device exploits the capillary effect of micro-sized poles in a screen and supplies pure liquid-phase propellant to the propulsion system. The bubble point is the most important performance parameter in the design of a liquid acquisition device. In this paper, performance parameters affecting the bubble point are identified through literature survey, in order to develop the experimental setup for the bubble point measurement.

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A Novel Calibration Method Research of the Scale Factor for the All-optical Atomic Spin Inertial Measurement Device

  • Zou, Sheng;Zhang, Hong;Chen, Xi-yuan;Chen, Yao;Fang, Jian-cheng
    • Journal of the Optical Society of Korea
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    • v.19 no.4
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    • pp.415-420
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    • 2015
  • A novel method to measure the scale factor for the all-optical atomic spin inertial measurement device (ASIMD) is demonstrated in this paper. The method can realize the calibration of the scale factor by a self-consistent method with small errors in the quiescent state. At first, the matured IMU (inertial measurement unit) device was fixed on an optical platform together with the ASIMD, and it has been used to calibrate the scale factor for the ASIMD. The results show that there were some errors causing the inaccuracy of the experiment. By the comparative analysis of theory and experiment, the ASIMD was unable to keep pace with the IMU. Considering the characteristics of the ASIMD, the mismatch between the driven frequency of the optical platform and the bandwidth of the ASIMD was the major reason. An all-optical atomic spin magnetometer was set up at first. The sensitivity of the magnetometer is ultra-high, and it can be used to detect the magnetization of spin-polarized noble gas. The gyromagnetic ratio of the noble gas is a physical constant, and it has already been measured accurately. So a novel calibration method for scale factor based on the gyromagnetic ratio has been presented. The relevant theoretical analysis and experiments have been implemented. The results showed that the scale factor of the device was $7.272V/^{\circ}/s$ by multi-group experiments with the maximum error value 0.49%.

Directional Alignment and Printing of One Dimensional Nanomaterials Using the Combination of Microstructure and Hydrodynamic Force (마이크로 구조 및 동유체력을 이용한 나노와이어 미세 정렬 및 프린팅 기법)

  • Chung, Yongwon;Seo, Jungmok;Lee, Sanggeun;Kwon, Hyukho;Lee, Taeyoon
    • Korean Journal of Materials Research
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    • v.23 no.10
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    • pp.586-591
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    • 2013
  • The printing of nanomaterials onto certain substrates is one of the key technologies behind high-speed interconnection and high-performance electronic devices. For the printing of next-generation electronic devices, a printing process which can be applied to a flexible substrate is needed. A printing process on a flexible substrate requires a lowtemperature, non-vacuum process due to the physical properties of the substrate. In this study, we obtained well-ordered Ag nanowires using modified gravure printing techniques. Ag nanowires are synthesized by a silver nitrate ($AgNO_3$) reduction process in an ethylene glycol solution. Ag nanowires were well aligned by hydrodynamic force on a micro-engraved Si substrate. With the three-dimensional structure of polydimethylsiloxane (PDMS), which has an inverse morphology relative to the micro-engraved Si substrate, the sub-micron alignment of Ag nanowires is possible. This technique can solve the performance problems associated with conventional organic materials. Also, given that this technique enables large-area printing, it has great applicability not only as a next-generation printing technology but also in a range of other fields.

Electrical Characteristics of Oxide Layer Due to High Temperature Diffusion Process (고온 확산공정에 따른 산화막의 전기적 특성)

  • 홍능표;홍진웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.451-457
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    • 2003
  • The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

Analysis of Impact ionization Model for Nano structure Silicon device (나노구조 실리콘 소자의 임팩트이온화 모델 분석)

  • 고석웅;임규성;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.10a
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    • pp.656-659
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    • 2001
  • Recently, as device techniques are advancing and its size become smaller, the hot carriers transport analysis has more important. Impact ionization(I.I.) effect is electron-hole pair generation process by the dispersion of hot carrier in the contrast with Auger process. Complete I.I. model is essential to simulate and analysis the device transport characteristics. In the study, we will try to analysis I.I. models using Monte Carlo simulator, TCAD and Micro-Tec and present more accurate I.I. model.

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