• Journal of Welding and Joining
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• v.20 no.6
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• pp.830-837
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and $Ti_3Ag$ and titanium oxide, $TiO_2$ were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of $900^{\circ}C$ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about $30\mu\textrm{m}$, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.113-119
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• 2022

In order to improve the mechanical reliability of next-generation electronic devices including flexible, wearable devices, a high level of mechanical reliability is required at various flexible joints. Organic adhesive materials such as epoxy for bonding existing polymer substrates inevitably have an increase in the thickness of the joint and involve problems of thermodynamic damage due to repeated deformation and high temperature hardening. Therefore, it is required to develop a low-temperature bonding process to minimize the thickness of the joint and prevent thermal damage for flexible bonding. This study developed flexible laser transmission welding (f-LTW) that allows bonding of flexible substrates with flexibility, robustness, and low thermal damage. Carbon nanotube (CNT) is thin-film coated on a flexible substrate to reduce the thickness of the joint, and a local melt bonding process on the surface of a polymer substrate by heating a CNT dispersion beam laser has been developed. The laser process conditions were constructed to minimize the thermal damage of the substrate and the mechanism of forming a CNT junction with the polymer substrate. In addition, lap shear adhesion test, peel test, and repeated bending experiment were conducted to evaluate the strength and flexibility of the flexible bonding joint.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.102-110
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• 2023

This paper introduces scarf welding process of thin substrates using flexible laser transmission welding (f-LTW) technology. We examined the behavior of tensile strength relative to the scarf angle for flexible applications. Thin plastic substrates with the thickness of less than 100 ㎛ were bonded and a jig to form a slope at the edge of the substrate was developed. By developing the scarf welding process, we successfully created a flexible bonding technology that maintains joint's thickness after the process. The tensile strength of the joint was assessed through uniaxial test, and we found that the tensile strength increases as the slope of bonding interface decreases. By conducting stress analysis at the bonding interface with respect to the slope angle, design factor of bonding structure was investigated. These findings suggest that the tensile strength depends on the geometry of the joint, even under the same process conditions, and highlights the significance of considering the geometry of the joint in welding processes.

• Journal of Welding and Joining
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• v.26 no.3
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.1
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• pp.53-59
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• 2009

The objectives of this paper are to study the characteristics of heat transfer and pressure drop of the micro channel heat exchangers using diffusion bonding technology. Four types of heat exchangers are designed and manufactured, which are straight type, long dot type, splited wavy type and straight double side type. Heat transfer and pressure drop performance of each heat exchangers are measured in various operating conditions, and compared each other. The results show that the $(j/f)^{1/3}$ performance of splited wavy type and long dot type increases about 10.3% and 6.1% at the Reynolds number 470 compared to that of straight type, respectively. On the other hand, $(j/f)^{1/3}$ performance of straight double side type decreases 19.7%.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2304-2309
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• 2008

The objectives of this paper are to study the characteristics of heat transfer and pressure drop of the micro channel heat exchangers using diffusion bonding technology. Four types of heat exchangers are designed and manufactured, which are straight type, long dot type, splited wavy type and straight double side type. Heat transfer and pressure drop performance of each heat exchangers are measured in various operating conditions, and compared each other. The results show that the $(j/f)^{1/3}$ performance of splited wavy type and long dot type increases about 10.3% and 6.1% at the Reynolds number 470 compared to that of straight type, respectively. On the other hand, $(j/f)^{1/3}$ performance of straight double side type decreases 19.7%.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1474-1475
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• 2008

본 논문에서는 nanoporous Pt (Platinum) 전극을 이용한 무효소 혈당센서의 생체 적합성 및 전류응답 특성 향상을 위해 다양한 패키징 방법이 제안되었다. 생체적합성을 갖는 Nafion 멤브레인을 dipping, spin coating, chemical bonding 방법으로 패키징 한 후, 다양한 글루코오스 농도의 혈장, 전혈에서 특성을 분석, 비교하였다. 단백질 등이 포함되지 않은 환경에서 spin coating 방법으로 패키징한 센서의 전류응답 특성은 가장 좋았지만, 혈장 및 전혈에서는 dipping, chemical bonding 방법으로 패키징한 센서의 전류응답 특성에 미치지 못했다. Nafion film을 센서와 chemical bonding한 센서의 혈장에서 sensitivity 는 0.32 ${\mu}A/mM{\cdot}cm^2$ 이었다. 한편, 전혈에서 bare 센서가 급격한 bio-fouling 현상을 보이는 반면 패키징한 센서는 글루코오스 농도에 따라 일정한 전류변화를 보였다. 이는 Nafion을 이용하여 패키징한 무효소 혈당 센서가 생체환경에 적합할 뿐 아니라 생체이식형 및 연속 측정 가능한 시스템에 적용 가능함을 보여준다.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.38-47
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• 2023

Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).