• Current Photovoltaic Research
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• v.10 no.3
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• pp.90-94
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• 2022

The screen-printing method is the most mature solar cell fabrication technology, which has the advantage of being faster and simpler process than other printing technology. A front metallization printed through screen printing influences the efficiency and manufacturing cost of solar cell. Recent technology development of crystalline silicon solar cell is proceeding to reduce the manufacturing cost while improving the efficiency. Therefore, screen printing requires process development to reduce a line width of an electrode and decrease shading area. In this paper, we will discuss the development trend and prospects of screen-printing metallization using metal paste, which is currently used in manufacturing commercial crystalline silicon solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.57-57
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• 2009

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.137-137
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• 2011

Programmable Metallization Cell (PMC) is a ReRAM device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using Ag+ ions which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.336-340
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• 2015

For rear metallization with Al paste, Al back contacts require good passivation, high reflectance, and a processing temperature window compatible with the front metal. In this paper, the effect of the firing ambient during the metallization process on the formation of Al rear metal was investigated. We chose three different gases as ambient gases during the firing process. Using SEM, we observed the formation of a back surface field in $N_2$, $O_2$, and Air ambients. To determine the effect of the ambient on Voc, the suns-Voc tool was used. In this study, we described the mechanism of burn-out of organic materials in Al paste during the firing process. The oxygen ambient plays an important role in the burn-out process. We calculated the efficiency with obtained the back surface recombination velocities using PC1D simulation. It was found that the presence of oxygen during the firing process influenced the uniform back surface field because the organic materials in the Al paste were efficiently burned out during heating. The optimized temperature with oxygen flow shows an absolute efficiency of 19.1% at PC1D simulation.

• Membrane and Water Treatment
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• v.2 no.4
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• pp.251-266
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• 2011

This work deals with the use of High Resolution Scanning Electron Microscopy (HRSEM) to verify ultrafiltration membrane selectivity at the end of the production line as well as membrane ageing. The first part of this work is focused on new membranes. It is shown that it is better to use sputtering metallization than vacuum deposition, as this latter technique entails thermal damage to the skin layer. Moreover, the impact of the metallization layer on the determination of the membrane pore size is studied and it is observed that no impact of the metallization step can be clearly defined for a metallization layer ranging from 3 to 12 nm. For example, an average pore size of 16.9 nm and a recovery rate of 6.5 % are observed for a 150 kDa cellulose acetate membrane. These results are in agreement with those given by the manufacturer: pore size ranging from 10 to 15 nm and recovery rate ranging from 5 to 10 %. The second part of this work focuses on the study of membrane ageing. A PVDF hollow fibre membrane is studied. It is shown that a 65 % decrease in the permeate flux can be linked to a decrease in the number of pores at the surface of the membrane and a decrease in the recovery rate. In conclusion, a mapping of the pores is performed for several new hollow fibre membranes used to produce drinking water, made of different materials, with different geometries and molecular weight cut-off. These results provide reference data that will help better understand the phenomena of membrane fouling and membrane ageing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• Journal of Powder Materials
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• v.29 no.6
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• pp.511-516
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• 2022

Electroless plating is widely utilized in engineering for the metallization of insulator substrates, including polymers, glass, and ceramics, without the need for the application of external potential. Homogeneous nucleation of metals requires the presence of Sn-Pd catalysts, which significantly reduce the activation energy of deposition. Therefore, rinsing conducted during Sn sensitization and Pd activation is a key variable for the formation of a uniform seed layer without the lack or excess of catalysts. Herein, we report the optimized rinsing process for the functionalization of Sn-Pd catalysts, which enables the uniform FeCo metallization of the glass fibers. Rinsing enables good deposition of the FeCo alloy because of the removal of excess catalysts from the glass fiber. Concurrently, excessive rinsing results in a complete removal of the Sn-Pd nucleus. Collectively, the comprehensive study of the proposed nanomaterial preparation and surface science show that the metallization of insulators is a promising technology for electronics, solar cells, catalysts, and mechanical parts.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.5
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• pp.532-538
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• 2004

MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.