Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.02a
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- Pages.137-137
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- 2011
Ge-Se 이원계 화합물을 이용한 ReRAM 스위칭 특성 분석에 관한 연구
- Published : 2011.02.09
Abstract
Programmable Metallization Cell (PMC) is a ReRAM device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using Ag+ ions which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.