• 마이크로전자및패키징학회지
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• 제18권3호
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• pp.1-7
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• 2011

Active brazing of ceramic to metal is reviewed in this paper. As one of the key aspect in joint techniques, active brazing has been developed to simplify the manufacturing procedure of brazed joints between ceramic and metal. The active filler metal includes Ag-Cu-Ti series, Cu-Ti series, Co-Ti series and so on. The active filler metal which supplies the chemical bonds between ceramic and metal, enhances the wetting of filler metal on ceramic surface and eliminates the need for metallization treatments. The residual stress caused by difference of coefficient of thermal expansion between ceramic and metal, holds a direct influence on the bonding strength and even results in a fracture. Good joints of ceramic to metal promote the miniaturization and simplicity of electronic components with multifunction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.67-68
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• 2009

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• 대한전자공학회논문지
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• 제19권6호
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• pp.91-95
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• 1982

LSI나 VLSI 소자의 제조 공정중 금속막이 기존의 스텝 커버리지를 좋게 하는 것은 매우 중요한 일이다. 본 인구에서 얻어진 방법은 8.0∼8.6wt.%의 인을 고함하는 PCG를 증기 (steam) 분위기의 950℃에서 30분간 열처리한 후 250℃에서 1 um의 악루미늄을 증착하는 것이다. One significant problem which arises during the fabrication of LSI and/or VLSI is how to make a good step coverage for aluminum. One way developed in this study is to flow PSG containing 8.0 wt.% - 8.6 wt.% of phosphorus at 950℃ for 30 minutes in steam and to depo3it aluminum of 1 urn thickness at 250℃.

• 한국표면공학회지
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• 제28권5호
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• pp.309-319
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• 1995

The substrate patterned with the dry film has the cavity which has the $90^{\circ}$ wall angle. Electroplating Cu on this patterned substrate has the differrent shape history with the electrochemical parameters. By potential theory model, the reason of the variation of the shape change with the these parameters was investigated. The shape history could be explained by the current flow and the correlated area effects. By embedding the Ni layer between the Cu layers, shape history with the time was obtained experimentally and the results was compared with the numerical analysis by BEM. The adhesive Cr-Cu film in TAB application was etched with the various condition. The best condition for the etchant of the Cr-Cu film was found.

• 한국표면공학회지
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• 제34권6호
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• pp.545-552
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• 2001

Effect of ultrasonic agitation on Pd catalyst treatment was studied in metallization of ceramic boards by Cu electroless plating method.96% $Al_{2}$$O_{3}$ ceramic boards were used as substrate. In this study, the ultrasonic frequency of 28kHz was applied. In Pd catalyst, high density Pd nuclei of small size were formed during ultrasonic agitation. Density of Pd was more improved when using of ultrasonic then no stirring. In electroless plating, plating rate was in the range of 0.6~1.8$\mu\textrm{m}$/hr, which value increased with Rochelle Salts addition. Adhesion strength between ceramic boards and Cu layer was improved of 20% when using ultrasonic agitation at $30^{\circ}C$ ,5min.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.89-93
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• 2005

A rear contact solar cell has a potential merit of efficiency improvement by a low shading loss in front surface. a simplified module assembly. and a higher packing density. Among the rear contact solar cells. MWT. metallizationl wrap through MWT solar cells that have the bus bars on the back side and the front side metallization is connected to the back through metal filled laser fired holes in the silicon wafer. This approach has the advantages of a much more uniform appearance. The first fabrication of MWT using a multicrystalline silicon modules in our group showed $12.28\%$ on $125mm{\times}125mm$ active area.

• 한국진공학회지
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• 제2권4호
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• 전자공학회논문지D
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• 제35D권1호
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• pp.27-33
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• 1998

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization.The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM 9Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$_{6}$ plasma treatment sulbsequent to the etching process preventas the corrosion effectively in the pressure of 300 mTorr. It is found that the cholrine atoms on the etched surface are not substituted for fluorine atoms during SF$_{6}$ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$_{6}$ treated surface and suppresses the corrsion sucessfully.fully.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1014-1017
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• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.