• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.104-104
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• 1999

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.326.2-326
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.80-81
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.35-35
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• 1998

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.582-582
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• 2018

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.25 no.3
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• pp.294-300
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• 2015

Objectives: The aim of this study is to identify physicochemical properties such as chemical composition, size, shape and crystal structure of powder byproducts generated from a metallization process and its 1st scrubber in the semiconductor industry. Methods: Powder samples were collected from inner chambers during maintenance of the W-plug process equipment (using tungsten hexafluoride as a precursor material) and its 1st scrubber. The chemical composition, size and shape of the powder particles were determined by field emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) equipped with an energy dispersive spectroscope (EDS). The crystal structure of the powders was analyzed by X-ray diffraction (XRD). Results: From the SEM-EDS and TEM-EDS analyses, O and W were mainly detected, which indicates the powder byproducts are tungsten trioxide ($WO_3$), whereas Al, F and Ti were detected as low peaks. The powder particles were spherical and nearly spherical, and the particle size collected from the process equipment and its 1st scrubber showed 10-20 nm (agglomerates: 55-90 nm) and 16-20 nm (agglomerates: 80-120 nm) as primary particles, respectively. The XRD patterns of the yellow powder byproducts exhibit five peaks at $23.8^{\circ}$ $33.9^{\circ}$ $41.74^{\circ}$ $48.86^{\circ}$ and $54.78^{\circ}$ which correspond to the (200), (220), (222), (400), and (420) planes of cubic $WO_3$. Conclusions: We elucidated the physicochemical characteristics of the powder byproducts collected from W-plug process equipment and its 1st scrubber. This study should provide useful information for the development of alternative strategies to improve the working environment and workers' health.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.11
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• pp.1135-1140
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• 2012

Two-step metallization processes have been proposed to achieve high-efficiency silicon solar cells, where the front-side grids are formed by silver plating after the formation of a nickel seed layer with a mask. Because the conventional mask patterning process is performed by an expensive selective printing method using either UV resist or phase change ink, however, the combination of a simple coating and laser-selective ablation processes is proposed in this study as an alternative means. As a masking material, the solar cell wafer was coated with either inexpensive wax having a low melting temperature or a fluorocarbon solution, and then, an electrode image was patterned by selectively removing the masking material using the laser. It was found that the fluorocarbon coating was not only superior to the wax coating in terms of pattern uniformity but it also increased the efficiency of the solar cell by 0.16%, as confirmed by statistical f and t tests.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.5
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• pp.365-372
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• 2017

Finger electrodes on a crystalline silicon solar cell are required to be constructed as narrow and thick as possible in order to minimize shading losses and electrical resistance. The most common means to construct high-aspect ratio finger electrodes has been screen-printing, but it has difficulty achieving fine finger electrodes because the as-printed finger width is generally wider by 1.3-2.2 times the screen opening width. Consequently, it requires an extremely small screen opening (below $30{\mu}m$) in order to achieve a finger width below $40{\mu}m$. However, the use of such a small screen opening could result in various problems, such as high printing pressure, defective transport of silver paste, and high electrical resistance due to unfavorable mesh marks left on the finger electrodes. In this study, dispensing printing with a screw pump is introduced as an alternative to conventional screen-printing and its unique traits in the front side metallization of crystalline silicon solar cells is discussed.

• Journal of IKEEE
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• v.22 no.3
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• pp.706-711
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• 2018

In this work, we have investigated the characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices with silicon oxynitride (SiON) insulator using plasma enhanced chemical vapor deposition (PECVD). After post metallization annealing, the trap densities of the fabricated devices decreased significantly. In particular, the device annealed at $500^{\circ}C$ in forming gas ambient exhibited excellent MOS characteristics along with negligible hysteresis, which proved the potential of PECVD SiON as an alternative gate insulator for use in 4H-SiC MOS device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.