• Korean Journal of Materials Research
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• v.32 no.5
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• pp.264-269
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• 2022

Ti₃C₂T_x MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 ℃ in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti₃C₂T_x MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO₂ particles were formed on the MXene surface when it was mildly heated to 200 ℃. Heating the material to higher temperatures, up to 400 ℃, the phase transformation of Ti₃C₂T_x MXene to TiO₂ was accelerated, resulting in a TiO₂/Ti₃C₂T_x hybrid. Consequently, the metallic nature of pure Ti₃C₂T_x MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 ℃. The results of this research clearly demonstrate that Ti₃C₂T_x MXene may be easily oxidized even at low temperatures once it is exposed to air.

• Nuclear Engineering and Technology
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• v.55 no.10
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• pp.3648-3658
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• 2023

The early localization of a fuel subassembly with a failed (wet rupture) fuel pin is very important in reactors to limit the associated radiological and operational consequences. This requires a fast and reliable system for failure detection and their localization in the core. In the Prototype Fast Breeder Reactor, the system specially designed for this purpose is Failed Fuel Location Modules (FFLM) housed in the control plug region. It identifies a failed sub-assembly by detecting the presence of delayed neutrons in the sodium from a failed sub-assembly. During the commissioning phase of PFBR, it is mandatory to demonstrate the FFLM effectiveness. The paper highlights the engineering and physics design aspects of FFLM and the integrated simulation towards its function demonstration with a source assembly containing a perforated metallic fuel pin. This test pin mimics a MOX pin of 1 cm² of geometrical defect area. At 10% power and 20% sodium flow rate, the counts rate in the BCCs of FFLM system range from 75 cps to 145 cps depending upon the position of DN source assembly. The model developed for the counts simulation is applicable to both metal and MOX pins with proper values of k-factor and escape coefficient.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.116-122
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• 2010

A $Cu_3Si$ film electrode is obtained by Si deposition on a Cu foil using DC magnetron sputtering, which is followed by annealing at $800^{\circ}C$ for 10 h. The Si component in $Cu_3Si$ is inactive for lithiation at ambient temperature. The linear sweep thermammetry (LSTA) and galvano-static charge/discharge cycling, however, consistently illustrate that $Cu_3Si$ becomes active for the conversion-type lithiation reaction at elevated temperatures (> $85^{\circ}C$). The $Cu_3Si$ electrode that is short-circuited with Li metal for one week is converted to a mixture of $Li_{21}Si_5$ and metallic Cu, implying that the Li-Si alloy phase generated at 0.0 V (vs. Li/$Li^+$) at the quasi-equilibrium condition is the most Li-rich $Li_{21}Si_5$. However, the lithiation is not extended to this phase in the constant-current charging (transient or dynamic condition). Upon de-lithiation, the metallic Cu and Si react to be restored back to $Cu_3Si$. The $Cu_3Si$ electrode shows a better cycle performance than an amorphous Si electrode at $120^{\circ}C$, which can be ascribed to the favorable roles provided by the Cu component in $Cu_3Si$. The inactive element (Cu) plays as a buffer against the volume change of Si component, which can minimize the electrode failure by suppressing the detachment of Si from the Cu substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.145-150
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• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.51-57
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• 2013

We have applied mechanical alloying (MA) to produce Heusler $Fe_2VAl$ thermoelectric alloy using a mixture of elemental $Fe_{50}V_{25}Al_{25}$ powders. An optimal milling and heat treatment conditions to obtain the single phase of Fe2VAl compound with fine microstructure were investigated by X-ray diffraction and differential scanning calorimetry (DSC) measurement. The $Fe_{50}V_{25}Al_{25}$ MA sample ball-milled for 60 hours exhibits a bcc ${\alpha}$-(Fe,V,Al) solid solution. Single phase of Heusler $Fe_2VAl$ compound can be obtained by MA of $Fe_{50}V_{25}Al_{25}$ mixture for 60 hours and subsequently heated up to $700^{\circ}C$. Sintering of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $900{\sim}1000^{\circ}C$ under 60 MPa. The Vickers hardness of bulk sample sintered at $1000^{\circ}C$ was high value of Hv 870. All compact bodies have a high relative density above 90 % with metallic glare on the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.3
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• pp.121-127
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• 2007

We have applied mechanical alloying (MA) to get $Mg_2Si$ thermoelectric material with nano-sized grains. An optimal milling and heat treatment conditions to obtain the single phase of $Mg_2Si$ compound with fine microstructure were investigated by X-ray diffraction and differential scanning calorimetry (DSC) measurement. The $Mg_{66.7}Si_{33.3}$ MA samples ball-milled for $20{\sim}180\;hrs$ exhibit two broad exothermic heat releases around $220^{\circ}C$ and $570^{\circ}C$. On the other hand, MA sample ball-milled far 260 hrs exhibits only a sharp exothermic peak at $230^{\circ}C$ Single phase Mg2Si powder can be obtained by MA of $Mg_{66.7}Si_{33.3}$ mixture for 60 hours and subsequently heated up to $620^{\circ}C$. Sintering of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $800{\sim}900^{\circ}C$ under 50 MPa. The shrinkage of sintering sample during SPS was significant at about $200^{\circ}C$. All compact bodies have a high relative density above 94% with metallic glare on the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.372-378
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• 2019

Traditional ceramic glazes formulated with copper oxide (CuO) exhibited antibacterial properties on Staphylococcus aureus (Gram Positive) and Escherichia coli (Gram Negative). All the ceramic glazes containing CuO showed antibacterial behavior when fired in reducing atmosphere. However, some of copper glazes presented antibacterial behavior and had no antibacterial properties at all when sintered in an oxidizing atmosphere. To elucidate the antibacterial mechanism, ceramic glazes were studied for phase and microstructure analysis, dissolution behavior and surface zeta potential. Metallic copper was precipitated in the glaze layer when sintered in reducing atmosphere. Less than 0.05 ppm of Cu ion was dissolved from glazes. Ca ion was most dissolved among all the samples. Glaze surface was highly negatively charged when CuO was added over 3 wt.% regardless of the sintering atmosphere. The antibacterial behavior of ceramic glazes seemed to be directly related to the dissolution behavior of cations, but the antibacterial behavior of oxidized specimens was not explained by the dissolution behavior. Surface potential of ceramic glazes appeared to play an auxiliary role in antibacterial properties.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.39 no.2
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• pp.149-158
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• 2013

L-ascorbic acid, the representative antioxidants, has a great effect on skin whitening, collagen synthesis, and anti-aging, but has low oxidative stability during storage. Therefore, in this study, thermal and oxidation properties of L-ascorbic acid under various storage conditions (powder, aqueous phase, changes of temperature, UV-irradiation, and inflow of external air etc.) were investigated. And the storage stability of ingredient was validated in the double-spaced pouch by analysing oxidation properties under each storage conditions (powder phase and blended with essence). In oder to analyze the thermal properties, TGA, DSC, and FT-IR analysis were carried out and UV-visible spectrophotometer & redox titration were used in parallel for oxidation property analyses. From the result of experiment, L-ascorbic acid was oxidized fast when it contained lots of metallic ion, hydroxy ion in aqueous solution under high temperature, UV-irradiation & inflow external air, whereas it was not oxidized for a long time when it was stored as pure powder although it has same condition as heating up, UV-irradiation & inflow external air. Based on this result, retention period of cosmetics which is using L-ascorbic acid, less stable material in oxidation can be innovatively increased when using double-spaced pouch that is designed and produced for separating storage of active ingredients.

• Journal of the Korean Chemical Society
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• v.33 no.2
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• pp.232-237
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• 1989

The elution mechanism of rare earth elements in cation exchange resin which was substituted with $NH_4^+,\;Zn^{2+}\;or\;Al^{3+}$ as a retaining ion had been investigated. Rare earths or rare earths-EDTA complex solution was loaded on the top of resin bed and eluted with 0.0269M EDTA solution. When the rare earth-EDTA complex was adsorbed on the $Zn^{2+}\;or\;Al^{3+}$ resin form, retaining ion was complexed with EDTA and liberated rare earths was adsorbed in the resin again. Adsorbed rare earths in resin phase could be eluted by the complexation reaction with EDTA eluent. On $NH_4^+$ resin form, the rare earth-EDTA complex which had negative charge could not adsorbed on the cation exchange resin because the complexation reaction between $NH_4^+$ and EDTA was impossible. So the elution time was much shorter than in $Zn^{2+}\;or\;Al^{3+}$ resin form. When the rare earths solution was loaded on the $Zn^{2+},\;Al^{3+}$ resin form bed, rare earths was adsorbed in the resin and the retaining ion was liberated. Adsorbed rare earths in resin bed was exchanged by EDTA eluent forming rare earths-EDTA complex, and eluted through these processes. On $NH_4^+$ resin form, rare earths loaded was adsorbed by exchange reaction with $NH_4^+$. As the EDTA eluent was added, rare earths was liberated from resin forming negatively charged rare earth-EDTA complex and eluted without any exchange reaction. So the elution time was greatly shortened and there was no metallic ion except rare earths in effluent. When the $Zn^{2+}\;and\;Al^{3+}$ was used as retaining ion, the pH of efflent was decreased seriousely because the $H^+$ liberated from EDTA molecule.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.1-10
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• 1999

InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.