• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.21 no.1
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• pp.55-64
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• 2023

There is a gap in our understanding of the behavior of fused and molten fuel salts containing unavoidable contamination, such as those due to fabrication, handling, or storage. Therefore, this work used calorimetry to investigate the change in liquidus temperature of PuCl₃, having an unknown purity and that had been in storage for several decades. Further research was performed by additions of NaCl, making several compositions within the binary system, and summarizing the resulting changes, if any, to the phase diagram. The melting temperature of the PuCl₃ was determined to be 746.5℃, approximately 20℃ lower than literature reported values, most likely due to an excess of Pu metal in the PuCl₃ either due to the presence of metallic plutonium remaining from incomplete chlorination or due to the solubility of Pu in PuCl₃. From the melting temperature, it was determined that the PuCl₃ contained between 5.9 to 6.2mol% Pu metal. Analysis of the NaCl-PuCl₃ samples showed that using the Pu rich PuCl₃ resulted in significant changes to the NaCl-PuCl₃ phase diagram. Most notably an unreported phase transition occurring at approximately 406℃ and a new eutectic composition of 52.7mol% NaCl-38.7mol% PuCl₃-2.5mol% Pu which melted at 449.3℃. Additionally, an increase in the liquidus temperatures was seen for NaCl rich compositions while lower liquidus temperatures were seen for PuCl₃ rich compositions. It can therefore be concluded that changes will occur in the NaCl-PuCl₃ binary system when using PuCl₃ with excess Pu metal. However, melting temperature analysis can provide valuable insight into the composition of the PuCl₃ and therefore the NaCl-PuCl₃ system.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4835-4841
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• 2015

The effect of particle size and compaction pressure on the thermoelectric properties of n-type $FeSi_2$ was investigated. The starting powders with various particle size were pressed into a compact (compaction pressure; $70{\sim}220kg/cm^2$). The compact specimens were sintered at 1473 K for 7 h and annealed at 1103 K for 100 h under Ar atmosphere to transform to the semiconducting ${\beta}$-phase. The microstructure and phases of the specimens were observed by SEM, XRD and EDS. The electrical conductivity and Seebeck coefficient were measured simultaneously for the same specimen at r.t.~1023 K in Ar atmosphere. The electrical conductivity increased with decreasing particle size and hence the increases of relative density of the sintered body and the amount of residual metallic phase ${\varepsilon}$-FeSi due to a increase of the electrical conductivity. The Seebeck coefficient exhibited the maximum value at about 700~800 K and decreased with decreasing particle size. This must be due to a increase of residual metallic phase ${\varepsilon}$-FeSi. On the other hand, the change of compaction pressure appeared to have little effect on the thermoelectric properties. Consequently, the power factor would be affected more by particle size than compaction pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.157-161
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• 2006

InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.

• Journal of electromagnetic engineering and science
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• v.3 no.2
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• pp.118-125
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• 2003

This paper presents a 5.8-㎓ oscillator that uses a novel defected ground structure(DGS), which is etched on the metallic ground plane. As the suggested defected ground structure is the structure for mounting an active device, it is the roles of a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM simulation ,md simple circuit analysis method. In order to demonstrate a new DGS oscillator, we designed the oscillator at 5.8-㎓. The experimental results show 4.17 ㏈m output power with over 22 % dc-to-RF power efficiency and - 85.8 ㏈c/Hz phase noise at 100 KHz offset from the fundamental carrier at 5.81 ㎓.

• Journal of Korea Foundry Society
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• v.17 no.6
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• pp.592-597
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• 1997

The microstructure and tensile properties of Mg-Zn-Ca and Mg-Zn-Mn-Ca alloys have been investigated. The alloys were obtained by melting in a low carbon crucible coated with boron nitride under an Ar gas atmosphere to prevent oxidation and combustion. The Mg alloy melt was cast into the metallic mold at room temperature, and cooling part was located at the bottom of mold. The phase formed during solidification of the Mg-Zn-(Mn) alloys containing 0.5%Ca is $Ca_2Mg_6Zn_3$. The yield strength and ultimate tensile strength of the alloys increased with increasing Zn content, but the ductility did not change with increasing Zn content. The addition of Mn improves the yield strength and ultimate tensile strength of the alloys, but the ductility did not change. Tensile fracture of the alloys revealed brittle failure, with cracking along the $Ca_2Mg_6Zn_3$ phase. The variation of stress with strain obeyed the relationship of the ${\sigma}=K{\varepsilon}^n$.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.43-47
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• 1996

$RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.11-15
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• 2007

Stable metallic Cu/Zn nanoparticles were prepared in the base oil phase by hydrothermal method. The physical properties, such as crystal structure, crystallite size and crystallinity according to synthesis conditions have been investigated by XRD, FT-IR and TEM. In addition, 4-ball test has been performed in order to investigate the frictional wear properties of prepared nanosized Cu/Zn particles. The peaks of the X-ray diffraction pattern indicate that the particle size was very small and crystallinity of Cu/Zn particles was good. The micrographs of TEM showed that nanosized Cu/Zn particles possessed a spherical morphology with a narrow size distribution. The crystallite size of the Cu/Zn particles synthesized in base oils was 23-30 nm. It was found that the antiwear capacity increases with increasing Cu/Zn concentration. When the concentration of Cu/Zn was 5.0 wt%, the wear scar diameters was 0.38 mm.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.193-199
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• 2003

Ti-Cu-N and Ti-Ag-N nanocomposite films with various copper and silver contents were synthesized by arc ion plating and magnetron sputtering hybrid system. The structure and mechanical properties of these films were found to be dependant on the copper and silver concentration. The maximum hardness of Ti-Cu-N and Ti-Ag-N films showed approximately 40 ㎬ below 2 at%Me. The role of soft metallic phase in Ti-Me-N nanosturctured films containing one hard and one soft phase is also discussed.

• Journal of Welding and Joining
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• v.25 no.3
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• pp.28-36
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• 2007

A bulk amorphous NiTiZrSiSn powder produced using an inert gas atomization was sprayed by kinetic spraying process that is basically a solid-state deposition process onto a mild steel substrate. They were successfully overlaid onto the mild steel substrate. In order to evaluate the tribological behavior of the kinetic sprayed NiTiZrSiSn BMG (Bulk Metallic Glass) coatings, a partially crystallized coating and a fully crystallized coating were prepared by the isothermal heat treatments. Tribological behaviors were investigated in view of friction coefficient, hardness and amorphous phase fraction of coating layer. Surface morphologies and depth in the wear tracks were observed and measured by scanning electron microscope and alpha-step. From the examination of the scratch wear track microstructure, transition from the ductile like deformation (micro cutting) to the brittle deformation (micro fracturing) in the scratch groove was observed with the increase of the crystallinity.

• Applied Microscopy
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• v.43 no.4
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• pp.173-176
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• 2013

The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.