• 제목/요약/키워드: metallic oxide

검색결과 324건 처리시간 0.027초

리튬용융염에서 플라즈마 용사된 부분안정화 지르코니아 코팅층의 고온부식 거동 (Hot Corrosion Behavior of Plasma-Sprayed Partially Stabilized Zirconia Coatings in a Lithium Molten Salt)

  • 조수행;홍순석;강대승;박병흥;허진목;이한수
    • 대한금속재료학회지
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    • 제46권10호
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    • pp.646-651
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    • 2008
  • The electrolytic reduction of spent oxide fuel involves the liberation of oxygen in a molten LiCl electrolyte, which results in a chemically aggressive environment that is too corrosive for typical structural materials. It is essential to choose the optimum material for the process equipment handling molten salt. IN713LC is one of the candidate materials proposed for application in electrolytic reduction process. In this study, yttria-stabilized zirconia (YSZ) top coat was applied to a surface of IN713LC with an aluminized metallic bond coat by an optimized plasma spray process, and were investigated the corrosion behavior at $675^{\circ}C$ for 216 hours in the molten salt $LiCl-Li_2O$ under an oxidizing atmosphere. The as-coated and tested specimens were examined by OM, SEM/EDS and XRD, respectively. The bare superalloy reveals obvious weight loss, and the corrosion layer formed on the surface of the bare superalloy was spalled due to the rapid scale growth and thermal stress. The top coatings showed a much better hot-corrosion resistance in the presence of $LiCl-Li_2O$ molten salt when compared to those of the uncoated superalloy and the aluminized bond coatings. These coatings have been found to be beneficial for increasing to the hot-corrosion resistance of the structural materials for handling high temperature lithium molten salts.

칼슘 증기에 의한 Ti-48Al-2Cr-2Nb 분말의 산소 저감 및 표면 화학적 상태 분석 (Evaluation of Oxygen Reduction and Surface Chemical State of Ti-48Al-2Cr-2Nb Powder by Ca Vapor)

  • 김태헌;권한중;임재원
    • 한국분말재료학회지
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    • 제28권1호
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    • pp.31-37
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    • 2021
  • This study explores reducing the oxygen content of a commercial Ti-48Al-2Cr-2Nb powder to less than 400 ppm by deoxidation in the solid state (DOSS) using Ca vapor, and investigates the effect of Ca vapor on the surface chemical state. As the deoxidation temperature increases, the oxygen concentration of the Ti-48Al-2Cr-2Nb powder decreases, achieving a low value of 745 ppm at 1100℃. When the deoxidation time is increased to 2 h, the oxygen concentration decreases to 320ppm at 1100℃, and the oxygen reduction rate is approximately 78% compared to that of the raw material. The deoxidized Ti-48Al-2Cr-2nb powder maintains a spherical shape, but the surface shape changes slightly owing to the reaction of Ca and Al. The oxidation state of Ti and Al on the surface of the Ti-48Al-2Cr-2Nb powder corresponds to a mixture of TiO2 and Al2O3. As a result, the peaks of metallic Ti and Ti suboxide intensify as TiO2 and Al2O3 in the surface oxide layer are reduced by Ca vapor deposition.

친환경 납추 대체소재 개발 (Development of Eco-friendly Lead Substitute Materials)

  • 권진욱;송희진;황대연;김혜성
    • 열처리공학회지
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    • 제35권3호
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    • pp.130-138
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    • 2022
  • In this study, the characteristic of an amorphous fishing weight material according to controlling the alloy type and alloy composition of the glass forming agent added in PbO2 oxide was investigated. According to the experimental, when the glass forming agent of 15wt%SiO2-1wt%MgO content was added in β-PbO2, an amorphous fishing weight substitute having the lowest friction coefficient, excellent corrosion resistance and durability was obtained. The cell number of PbO2-15wt%SiO2-1wt%MgO sample incubated in cell culture fluid tended to hardly decrease even after a lapse of 24 hours, It means that the fabricated PbO2-15wt%SiO2-1wt%MgO sample is significantly less-toxic and harmless to the human body, unlikely to metallic lead. It is considered that an fabricated amorphous fishing weight substitute proved to have a potential as an eco-friendly material with little marine pollution.

유기박막트랜지스터 응용을 위한 탄소가 도핑된 몰리브덴 박막의 특성 (Characteristics of Carbon-Doped Mo Thin Films for the Application in Organic Thin Film Transistor)

  • 김동현;박용섭
    • 한국전기전자재료학회논문지
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    • 제36권6호
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    • pp.588-593
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    • 2023
  • The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (Ion/Ioff) showed 0.15 cm2/V·s, -5.6 V, and 7.5×104, respectively.

Electrical Characterization of Ultrathin Film Electrolytes for Micro-SOFCs

  • Shin, Eui-Chol;Ahn, Pyung-An;Jo, Jung-Mo;Noh, Ho-Sung;Hwang, Jaeyeon;Lee, Jong-Ho;Son, Ji-Won;Lee, Jong-Sook
    • 한국세라믹학회지
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    • 제49권5호
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    • pp.404-411
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    • 2012
  • The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

Si and Mg doped Hydroxyapatite Film Formation by Plasma Electrolytic Oxidation

  • Park, Seon-Yeong;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.195-195
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    • 2016
  • Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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바나듐 옥사이드 박막의 성장 및 그 구조적, 전기적, 광학적 특성 (Sol-gel growth and structural, electrical, and optical properties of vanadium-based oxide thin films)

  • 박영란;김광주
    • 한국진공학회지
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    • 제15권5호
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    • pp.534-540
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    • 2006
  • $V_2O_3$, $VO_2$, $V_2O_5$ 박막들이 하나의 선구 용액으로부터 다양한 후열처리 조건을 통하여 제작될 수 있었다. 진공 중 후열처리 시 rhombohedral 구조의 $V_2O_3$ 박막이 형성되어졌고, 공기 중 후열처리 시 orthorhombic 구조의 $V_2O_5$ 박막을 얻을 수 있었다. Monoclinic 구조의 $VO_2$ 박막은 진공 후열처리 중 $O_2$ 가스를 공급함으로써 제작될 수 있었다. $V_2O_3$ 박막이 상온에서 도체적 특성을 보이는 반면, $V_2O_5$, $VO_2$ 박막은 반도체적 성질을 지니고 있음을 전기적, 광학적 특성 조사를 통하여 알 수 있었다. 크롬(Cr)이 도핑됨에 따라 $VO_2$ 박막은 그 전기전도성이 n-type에서 p-type으로 변화하였고 비저항이 감소되는 결과를 나타내었다. 또한, 크롬 도핑된 $VO_2$ 박막은 orthorhombic 구조를 나타내었다. 이와 같은 바나듐 옥사이드 박막들에서 관측된 광학적 흡수 구조들은 O 2p 에서 V 3d 밴드로의 전이에 의한 것으로 해석되어진다. 바나듐 이온의 $t_{2g}$ 상태와 $e_g$ 상태 사이의 결정장 갈라짐(crystal-field splitting)은 $V_2O_5$$VO_2$에 대해서 각각 1.5 및 1.0 eV로 해석된다.

Ar/Ar-H2 플라즈마에 의한 V, Ta, B 산화물의 탄소용융환원 및 정련 (A Study on the Carbothermic Reduction and Refining of V, Ta and B Oxides by Ar/Ar-H2 Plasma)

  • 정용석;박병삼;홍진석;배청찬;김문철;백홍구
    • 한국수소및신에너지학회논문집
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    • 제7권1호
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    • pp.81-92
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    • 1996
  • Ar/Ar-$H_{2}$ 플라즈마법으로 V, Ta, B산화물과 금속의 환원 및 정련을 행하였다. 다시말해 Ar 플라즈마에서의 고온환원반응 및 Ar-(20%)$H_{2}$ 플라즈마에서의 정련 반응에 대한 연구를 각각 수행하였다. Ar 플라즈마 환원에 의하여 $C/V_{2}O_{5}$=4.50의 비에서 순도 96wt%의 조금속 Vdmf 얻었고, 바나듐 산화물의 열분해에 의한 $O_{2}$의 손실로 인해 $C/V_{2}O_{5}$=4.50에서 최대환원도가 얻어졌다. Ar-(20%)$H_{2}$ 플라즈마 정련에서는 $C/V_{2}O_{5}$=4.40의 비에서 99.2wt%의 금속 V을 얻었고, 주된 정련반응은 잔류탄소와 잔류산소의 반응으로 판단된다. 금속 Ta은 Ar 플라즈마 환원에 의하여 $C/Ta_{2}O_{5}$=5.10의 비에서 99.8wt%가 얻어졌고, $Ta_{2}O_{5}$의 열분해에 의한 $O_{2}$ 손실은 발생하지 않았다. Ar-(20%)$H_{2}$ 플라즈마 정련시 탈산반응이 탈탄반응보다 현저했으며, $C/Ta_{2}O_{5}$비가 4.50-5.10의 범위에서 99.9wt%의 금속 Ta을 제조하였다. 이 비에서는 탈산반응에 의한 잔류산소의 감소로 Ta외 Vickers 경도가 약 220Hv였다. 한편, Ar 및 Ar-$H_{2}$ 플라즈마에 의한 $B_{2}O_{3}$의 환원에는 C이 환원제로서 적합하지 않았으나, Fe원 소재와 C, $B_{2}O_{3}$ 및 페로보론을 고주파 유도 용해하였을 때 용강중에서의 $B_{2}O_{3}$의 환원으로 Fe-B-Si 합금을 얻었다.

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Impedance-Based Characterization of 2-Dimenisonal Conduction Transports in the LaAlO3/SrxCa1-xTiO3/SrTiO3 systems

  • Choi, Yoo-Jin;Park, Da-Hee;Kim, Eui-Hyun;Park, Chan-Rok;Kwon, Kyeong-Woo;Moon, Seon-Young;Baek, Seung-Hyub;Kim, Jin-Sang;Hwang, Jinha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.171.2-171.2
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    • 2016
  • The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

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Impedance Spectroscopy Analysis on the LaAlO3/SrxCa1-xTiO3/SrTiO3 Hetero-Oxide Interface System

  • Park, Da-Hee;Kwon, Kyoung-Woo;Park, Chan-Rok;Choi, Yoo-Jin;Bae, Seung-Muk;Baek, Senug-Hyub;Kim, Jin-Sang;Hwang, Jin-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.188.2-188.2
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    • 2015
  • The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

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