• 제목/요약/키워드: metallic conductivity

검색결과 153건 처리시간 0.029초

전도성 Cellulose Acetate/Polypyrrole 복합체의 제조와 전기적 성질 (Preparation and Electrical Properties of Conducting Cellulose Acetate/Polypyrrole Composites)

  • Park, Yun-Heum;Bang, Ho-Joo
    • 한국염색가공학회지
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    • 제2권1호
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    • pp.31-36
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    • 1990
  • 산화제를 함유한 셀룰로우스 아세테이트 필름을 피롤 증기 속에 노출시킴으로써 전도성 셀룰로우스/폴리피롤 복합체 필름을 합성하고 폴리피롤의 형성을 IR 및 전자현미경을 사용하여 확인했다. 복합체 내에 존재하는 폴리피롤의 형태는 사용한 산화제의 종류에 따라 다르게 나타났다. 산화제로 사용한 몇 가지 금속염화물 중에서 염화제 2철이 높은 전도도를 가지는 복합체를 합성하는데 가장 효과적이며 50중량 퍼센트의 염화제 2철을 첨가해서 제조한 복합체 필름의 전기전도도는 $10^{-2}S/cm$에 달한다.

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$RuO_2$계 후막저항체의 전기전도기구 (Electrical Conduction Mechanisms of $RuO_2$ Based Thick Film Resistor)

  • 구본급;김호기
    • 한국세라믹학회지
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    • 제31권12호
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    • pp.1529-1535
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    • 1994
  • Electrical conduction mechanisms of RuO2-based thick film resistors were investigated with frequency depandence on AC conductivity. Electrical conduction mechanisms of lower resistivity system (100{{{{ OMEGA }}/sq) sintered at 600~90$0^{\circ}C$ were all metallic conduction mechanism. In case of higher resistivity (10K{{{{ OMEGA }}/sq) system, the electrical conduction mechanisms were very depenent on sintering temperature. When sintering temperature was $600^{\circ}C$, the electrical conduction mechamism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism was changed from ionic to hopping conduction mechanism.

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A novel approach to fabricate Cu-Ni core-shell microwires

  • Song, Chang-Hyun;Kim, Jong-Woong
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 추계학술대회 논문집
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    • pp.234-234
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    • 2015
  • Metallic microwires are a promising material for use as a filler in various conductive composite structures. Because of their high anisotropy in shape, a low percolation threshold could be achieved, which is beneficial to a low-cost fabrication and better electrical conductivity even under an extremely low solid content. Here we developed a facile method to fabricate the Cu (core)-Ni (shell) microwires.

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Radiation heat exchange 방법을 이용한 금속박막의 열전도도 측정 (Thermal conductivity measurement of thin metallic films using radiation heat exchange method)

  • 류상;김영만;정우남
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 춘계학술발표회 초록집
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    • pp.111-113
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    • 2007
  • Thermal conductivities of copper thin films on silicon wafer was obtained from temperature distribution on the surface of wafer measured by radiation thermometry, when sample was heated with constant temperature ate the both ends in a vacuum and dissipate heat by radiation heat transfer into an environment.

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전도성을 가지는 하이브리드 Ti2AlN 세라믹 복합체의 마이크로 방전드릴링에서 가공성 평가 (Machinability Evaluation of Hybrid Ti2 Ceramic Composites with Conductivity in Micro Electrical Discharge Drilling Operation)

  • 허재영;정영근;강명창
    • 한국분말재료학회지
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    • 제20권4호
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    • pp.285-290
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    • 2013
  • $Ti_2AlN$ composites are a laminated compounds that posses unique combination of typical ceramic properties and typical metallic(Ti alloy) properties. In this paper, the powder synthesis, SPS sintering, composite characteristics and machinability evaluation were systematically conducted. The random orientation characteristics and good crystallization of the $Ti_2AlN$ phase are observed. The electrical and thermal conductivity of $Ti_2AlN$ is higher than that of Ti6242 alloy. A machining test was carried out to compare the effect of material properties on micro electrical discharge drilling for $Ti_2AlN$ composite and Ti6242 alloy. Also, mixture table as a kind of tables of orthogonal arrays was used to know how parameter is main effective at experimental design. Consequently, hybrid $Ti_2AlN$ ceramic composites showed good machining time and electrode wear shape under micro ED-drilling process. This conclusion proves the feasibility in the industrial applications.

One-dimensional Schottky nanodiode based on telescoping polyprismanes

  • Sergeyev, Daulet
    • Advances in nano research
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    • 제10권4호
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    • pp.339-347
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    • 2021
  • In the framework of the density functional theory combined with the method of non-equilibrium Green functions (DFT + NEGF), the electric transport properties of a one-dimensional nanodevice consisting of telescoping polyprismanes with various types of electrical conductivity were studied. Its transmission spectra, density of state, current-voltage characteristic, and differential conductivity are determined. It was shown that C[14,17], C[14,11], C[14,16], C[14,10] show a metallic nature, and polyprismanes C[14,5], C[14,4] possess semiconductor properties and has a band gap of 0.4 eV and 0.6 eV, respectively. It was found that, when metal C[14,11], C[14,10] and semiconductor C[14,5], C[14,4] polyprismanes are coaxially connected, a Schottky barrier is formed and a weak diode effect is observed, i.e., manifested valve (rectifying) property of telescoping polyprismanes. The enhancement of this effect occurs in the nanodevices C[14,17] - C[14,11] - C[14,5] and C[14,16] - C[14,10] - C[14,4], which have the properties of nanodiode and back nanodiode, respectively. The simulation results can be useful in creating promising active one-dimensional elements of nanoelectronics.

One-dimensional Schottky nanodiode based on telescoping polyprismanes

  • Sergeyev, Daulet
    • Advances in nano research
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    • 제10권5호
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    • pp.471-479
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    • 2021
  • In the framework of the density functional theory combined with the method of non-equilibrium Green functions (DFT + NEGF), the electric transport properties of a one-dimensional nanodevice consisting of telescoping polyprismanes with various types of electrical conductivity were studied. Its transmission spectra, density of state, current-voltage characteristic, and differential conductivity are determined. It was shown that C[14,17], C[14,11], C[14,16], C[14,10] show a metallic nature, and polyprismanes C[14,5], C[14,4] possess semiconductor properties and has a band gap of 0.4 eV and 0.6 eV, respectively. It was found that, when metal C[14,11], C[14,10] and semiconductor C[14,5], C[14,4] polyprismanes are coaxially connected, a Schottky barrier is formed and a weak diode effect is observed, i.e., manifested valve (rectifying) property of telescoping polyprismanes. The enhancement of this effect occurs in the nanodevices C[14,17] - C[14,11] - C[14,5] and C[14,16] - C[14,10] - C[14,4], which have the properties of nanodiode and back nanodiode, respectively. The simulation results can be useful in creating promising active one-dimensional elements of nanoelectronics.

PEMFC용 금속분리판 코팅 기술 개발 : II. 코팅 금속분리판 연료전지 성능 특성 연구 (Development of Surface Coating Technology for Metallic Bipolar Hate in PEMFC : II. Study on the PEMEC Performance of Coated Metallic Bipolar Plate)

  • 윤용식;정경우;양유창;안승균;전유택;나상묵
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 추계학술대회
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    • pp.352-355
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    • 2006
  • As the stainless steel has good corrosion resistance, mechanical property and ease of manufacture, it has been studied as the candidate material of metallic bipolar plate for automotive PIMFC. But, metal is dissolved under fuel cell operating conditions Dissolved ions contaminate a membrane electrode assembly (MEA) and, decrease the fuel cell performance. In addition, metal oxide formation on the surface of stainless steel increases the contact resistance in the fuel cell. These problems have been acted as an obstacle in the application of stainless steel to bipolar plate. Therefore, many kinds of coating technologies have been examined in order to solve these problems. In this study, stainless steel was coated in order to achieve high conductivity and corrosion resistance by several methods. Contact resistance was measured by using a tensile tester and impedance analyzer Corrosion characteristics of coated stainless steel were examined by Tafel-extrapolation method from the polarization curves in a solution simulating the anodic and cathodic environment of PEMFC. Fuel cell performance was also evaluated by single cell test. We tested various coated metal bipolar plate and conventional and graphite were also tested as comparative samples. In the result, coated stainless steel bipolar plate exhibited better cell performance than graphite to bipolar plate.

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Flip Chip Assembly Using Anisotropic Conductive Adhesives with Enhanced Thermal Conductivity

  • Yim, Myung-Jin;Kim, Hyoung-Joon;Paik, Kyung-Wook
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.9-16
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    • 2005
  • This paper presents the development of new anisotropic conductive adhesives with enhanced thermal conductivity for the wide use of adhesive flip chip technology with improved reliability under high current density condition. The continuing downscaling of structural profiles and increase in inter-connection density in flip chip packaging using ACAs has given rise to reliability problem under high current density. In detail, as the bump size is reduced, the current density through bump is also increased. This increased current density also causes new failure mechanism such as interface degradation due to inter-metallic compound formation and adhesive swelling due to high current stressing, especially in high current density interconnection, in which high junction temperature enhances such failure mechanism. Therefore, it is necessary for the ACA to become thermal transfer medium to improve the lifetime of ACA flip chip joint under high current stressing condition. We developed thermally conductive ACA of 0.63 W/m$\cdot$K thermal conductivity using the formulation incorporating $5 {\mu}m$ Ni and $0.2{\mu}m$ SiC-filled epoxy-bated binder system to achieve acceptable viscosity, curing property, and other thermo-mechanical properties such as low CTE and high modulus. The current carrying capability of ACA flip chip joints was improved up to 6.7 A by use of thermally conductive ACA compared to conventional ACA. Electrical reliability of thermally conductive ACA flip chip joint under current stressing condition was also improved showing stable electrical conductivity of flip chip joints. The high current carrying capability and improved electrical reliability of thermally conductive ACA flip chip joint under current stressing test is mainly due to the effective heat dissipation by thermally conductive adhesive around Au stud bumps/ACA/PCB pads structure.

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N형 FeSi2의 열전특성에 미치는 입자크기 및 성형압력의 영향 (The Effect of Particle Size and Compaction Pressure on the Thermoelectric Properties of n-type FeSi2)

  • 배철훈
    • 한국산학기술학회논문지
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    • 제16권7호
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    • pp.4835-4841
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    • 2015
  • n형 FeSi2의 열전물성에 미치는 입자크기 및 성형압력의 영향에 대해 조사하였다. 입자크기가 다른 출발 분말을 각각 가압성형(성형압력; $70{\sim}220kg/cm^2$) 하였고, 제작한 성형체를 Ar 분위기 1473 K에서 7시간 소결한 후, 반도체상인 ${\beta}$상을 얻기 위해 1103 K에서 100시간 소둔처리 하였다. XRD, SEM 및 EDS를 이용해서 시편들의 미세구조 및 상분석을 행하였다. 동일 시료를 가지고 Ar 분위기 상온~1023 K에서 도전율과 Seebeck 계수를 동시에 측정하였다. 입자크기가 작을수록 소결밀도와 잔존 ${\varepsilon}$-FeSi 금속전도상 증가에 의해 도전율이 상승하였으며, Seebeck 계수는 700~800 K에서 최고값을 나타내었고, 입자크기가 작을수록 잔존 ${\varepsilon}$-FeSi 금속전도상 증가에 의해 감소하였다. 반면에 성형압력의 변화는 도전율 및 Seebeck 계수에 그다지 큰 영향을 미치지 않았다. 결과적으로 power factor는 성형압력 보다 입자크기에 큰 영향을 받았다.