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• 1994.11a
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• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.60.2-60.2
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• Proceedings of the Korean Ceranic Society Conference
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• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• Proceedings of the Korean Vacuum Society Conference
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• pp.125-125
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• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.43.2-43
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• JSTS:Journal of Semiconductor Technology and Science
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The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.