• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• Journal of Information Display
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• v.13 no.3
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• pp.113-118
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• 2012

Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.173-178
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• 2009

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.79.2-79.2
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• 2012

In this work, vertically aligned metal oxide nanorods(ZnO, $TiO_2$, $WO_3$) were grown onto CuO film at the room temperature. The fabricated nanorods of 90nm~500nm diameter range and $1{\mu}m{\sim}15{\mu}m$ of length range. Growth of metal oxide nanorods only depends on thickness of CuO film in this method, and it is grown at both of room temperature and high temperature. That means, it is much faster mathod to make the vertical metal oxide nanorods than old method such as hydrothermal method.

• Journal of Sensor Science and Technology
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• v.26 no.4
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• pp.228-234
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• 2017

Gas sensors based on metal-oxide-semiconductors are predominantly used in numerous applications including monitoring indoor air quality and detecting harmful substances such as volatile organic compounds. Nanostructures, e.g., nanoparticles, nanotubes, nanodomes, or nanofibers, have been widely utilized to improve the gas sensing properties of metal-oxide-semiconductors by increasing the effective surface area participating in the surface reaction with target gas molecules. Recently, 1-dimensional (1D) metal oxide nanostructures fabricated using glancing angle deposition (GAD) method with e-beam evaporation have been widely employed to increase the surface-to-volume ratio significantly with large-area uniformity and reproducibility, leading to promising gas sensing properties. Herein, we provide a brief overview of 1D metal oxide nanostructures fabricated using GAD and their gas sensing properties in terms of fabrication methods, morphologies, and additives. Moreover, the gas sensing mechanisms and perspectives are presented.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.6
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.129-132
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• 2007

Advanced structure of metal-supported solid oxide fuel cells was devised to overcome sealing problem and mechanical instability in ceramic-supported solid oxide fuel cells. STS430 whose dimensions were 26mm diameter, 1mm thickness and 0.4mm channel width was used as metal support. Thin ceramic layer composed of anode(Ni/YSZ) and electrolyte(YSZ) was joined with STS430 metal support by using a cermet adhesive. $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_{3}$ perovskite oxide was used as cathode material. It was noted that oxygen reduction reaction of cathode governed the overall cell performance from oxygen partial pressure dependance.

• Toxicological Research
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• v.25 no.4
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• pp.195-201
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• 2009

Recent publications showed that metal nanoparticles which are made from $TiO_2,\;CeO_2,\;Al_2O_3,\;CuCl_2,\;AgNO_3$ and $ZnO_2$ induced oxidative stress and pro-inflammatory effects in cultured cells and the responses seemed to be common toxic pathway of metal nanoparticles to the ultimate toxicity in animals as well as cellular level. In this study, we compared the gene expression induced by two different types of metal oxide nanoparticles, titanium dioxide nanoparticles (TNP) and cerium dioxide nanoparticles (CNP) using microarray analysis. About 50 genes including interleukin 6, interleukin 1, platelet-derived growth factor $\beta$, and leukemia inhibitory factor were induced in cultured BEAS2B cells treated with TNP 40 ppm. When we compared the induction levels of genes in TNP-treated cells to those in CNP-treated cells, the induction levels were very correlated in various gene categories (r=0.645). This may suggest a possible common toxic mechanism of metal oxide nanoparticles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.1-10
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• 2024

Direct use of sunlight through the glass windows is an efficient way to reduce the energy consumption related to the heating, cooling, and lighting. Introduction of near-infrared modulating properties through colloidal doped metal oxide nanocrystals into the classical electrochromic materials accelerates the development of next-generation electrochromic devices. There has been a steady enhancement in the performance of electrochromic devices, necessitating a review of the recent progress in next-generation electrochromic devices employing doped metal oxide nanocrystals. This review provides an overview of the current developments in next-generation electrochromic smart windows utilizing colloidal doped metal oxide nanocrystals, with a focus on the key factors for achieving these advanced windows. Colloidal doped metal oxide nanocrystals are a crucial component in realizing and bringing to market the next generation of electrochromic windows, though further research and development are still required in this regard.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.