• 제목/요약/키워드: metal oxide

검색결과 2,702건 처리시간 0.047초

Revealing Strong Metal Support Interaction during CO Oxidation with Metal Nanoparticle on Reducible Oxide Substrates

  • Park, Dahee;Kim, Sun Mi;Qadir, Kamran;Park, Jeong Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.264-264
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    • 2013
  • Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

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Solution-processed indium-zinc oxide with carrier-suppressing additives

  • Kim, Dong Lim;Jeong, Woong Hee;Kim, Gun Hee;Kim, Hyun Jae
    • Journal of Information Display
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    • 제13권3호
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    • pp.113-118
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    • 2012
  • Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

산화금속의 전기적 스위칭 특성 연구 (A study on the electrical switching properties of oxide metal)

  • 최성재;이원식
    • 한국인터넷방송통신학회논문지
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    • 제9권3호
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    • pp.173-178
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    • 2009
  • 금속산화물 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 TOP-TOP구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 산화금속박막의 전도특성이 측정되었다. 소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. $Si/SiO_2/MgO$ 소자는 Forming에 의해 저항이 큰 상태에서 저항이 작은 상태로 전기적 특성이 변화하면서 스위칭 특성을 보였다. 본 연구를 통하여 산화금속은 차세대 비휘발성 메모리로는 물론 다른 전기적 응용이 기대되는 물질임을 확인하게 되었다.

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Growth of vertically aligned metal oxide nanorods on CuO film

  • 김지민;정혁;이환표;윤순길;김도진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.79.2-79.2
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    • 2012
  • In this work, vertically aligned metal oxide nanorods(ZnO, $TiO_2$, $WO_3$) were grown onto CuO film at the room temperature. The fabricated nanorods of 90nm~500nm diameter range and $1{\mu}m{\sim}15{\mu}m$ of length range. Growth of metal oxide nanorods only depends on thickness of CuO film in this method, and it is grown at both of room temperature and high temperature. That means, it is much faster mathod to make the vertical metal oxide nanorods than old method such as hydrothermal method.

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Fabrication of 1D Metal Oxide Nanostructures Using Glancing Angle Deposition for High Performance Gas Sensors

  • Suh, Jun Min;Jang, Ho Won
    • 센서학회지
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    • 제26권4호
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    • pp.228-234
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    • 2017
  • Gas sensors based on metal-oxide-semiconductors are predominantly used in numerous applications including monitoring indoor air quality and detecting harmful substances such as volatile organic compounds. Nanostructures, e.g., nanoparticles, nanotubes, nanodomes, or nanofibers, have been widely utilized to improve the gas sensing properties of metal-oxide-semiconductors by increasing the effective surface area participating in the surface reaction with target gas molecules. Recently, 1-dimensional (1D) metal oxide nanostructures fabricated using glancing angle deposition (GAD) method with e-beam evaporation have been widely employed to increase the surface-to-volume ratio significantly with large-area uniformity and reproducibility, leading to promising gas sensing properties. Herein, we provide a brief overview of 1D metal oxide nanostructures fabricated using GAD and their gas sensing properties in terms of fabrication methods, morphologies, and additives. Moreover, the gas sensing mechanisms and perspectives are presented.

공융 갈륨-인듐 액체금속 전극 기반 전기이중층 커패시터 (An Electric Double-Layer Capacitor Based on Eutectic Gallium-Indium Liquid Metal Electrodes)

  • 김지혜;구형준
    • 한국수소및신에너지학회논문집
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    • 제29권6호
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    • pp.627-634
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    • 2018
  • Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

신구조 금속지지체형 고체산화물 연료전지 (Study on metal-supported solid oxide fuel cells)

  • 이창보;배중면
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.129-132
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    • 2007
  • Advanced structure of metal-supported solid oxide fuel cells was devised to overcome sealing problem and mechanical instability in ceramic-supported solid oxide fuel cells. STS430 whose dimensions were 26mm diameter, 1mm thickness and 0.4mm channel width was used as metal support. Thin ceramic layer composed of anode(Ni/YSZ) and electrolyte(YSZ) was joined with STS430 metal support by using a cermet adhesive. $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_{3}$ perovskite oxide was used as cathode material. It was noted that oxygen reduction reaction of cathode governed the overall cell performance from oxygen partial pressure dependance.

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Increased Gene Expression in Cultured BEAS-2B Cells Treated with Metal Oxide Nanoparticles

  • Park, Eun-Jung;Park, Kwang-Sik
    • Toxicological Research
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    • 제25권4호
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    • pp.195-201
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    • 2009
  • Recent publications showed that metal nanoparticles which are made from $TiO_2,\;CeO_2,\;Al_2O_3,\;CuCl_2,\;AgNO_3$ and $ZnO_2$ induced oxidative stress and pro-inflammatory effects in cultured cells and the responses seemed to be common toxic pathway of metal nanoparticles to the ultimate toxicity in animals as well as cellular level. In this study, we compared the gene expression induced by two different types of metal oxide nanoparticles, titanium dioxide nanoparticles (TNP) and cerium dioxide nanoparticles (CNP) using microarray analysis. About 50 genes including interleukin 6, interleukin 1, platelet-derived growth factor $\beta$, and leukemia inhibitory factor were induced in cultured BEAS2B cells treated with TNP 40 ppm. When we compared the induction levels of genes in TNP-treated cells to those in CNP-treated cells, the induction levels were very correlated in various gene categories (r=0.645). This may suggest a possible common toxic mechanism of metal oxide nanoparticles.

플라즈몬 금속 산화물 나노입자를 활용한 차세대 전기변색 소자 개발 동향 (Recent Progress of Developing Next-Generation Electrochromic Windows from Plasmonic Metal Oxide Nanocrystals)

  • 나장한;김성빈;허성연
    • 한국전기전자재료학회논문지
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    • 제37권1호
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    • pp.1-10
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    • 2024
  • Direct use of sunlight through the glass windows is an efficient way to reduce the energy consumption related to the heating, cooling, and lighting. Introduction of near-infrared modulating properties through colloidal doped metal oxide nanocrystals into the classical electrochromic materials accelerates the development of next-generation electrochromic devices. There has been a steady enhancement in the performance of electrochromic devices, necessitating a review of the recent progress in next-generation electrochromic devices employing doped metal oxide nanocrystals. This review provides an overview of the current developments in next-generation electrochromic smart windows utilizing colloidal doped metal oxide nanocrystals, with a focus on the key factors for achieving these advanced windows. Colloidal doped metal oxide nanocrystals are a crucial component in realizing and bringing to market the next generation of electrochromic windows, though further research and development are still required in this regard.

Influence of metal annealing deposited on oxide layer

  • Kim, Eung-Soo;Cho, Won-Ju;Kwon, Hyuk-Choon;Kang, Shin-Won
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.365-368
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    • 2002
  • We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

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