• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• 대한기계학회논문집A
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• 제29권2호
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• pp.220-227
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• 2005

In this study, stress-displacement analytic solutions are obtained by a shear lag modeling method constructed for the spliced joint area with a splicing gap in the fiber metal laminate (FML). This gap can be empty or be filled with an adhesive material of elastic modulus $E_a$. Two splicing types are considered for spliced shear models, one for spliced in the center metal layer, the other for spliced in the outer metal layer. It is shown that from the viewpoint of the load transfer efficiency and the avoidability of disbond generation due to the shear and axial stresses at the interface between metal layer and composite layer of the gap-front in the spliced area, the center spliced type (k=2) is much preferable to the outer spliced type (k=1).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.787-790
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• 2009

High contrast red, green and blue organic light-emitting diodes were fabricated using inorganic metal multi layer composed of thin Al, KCl and thick Al and then were compared to optical and electrical characteristics with the attached polarizer and conventional OLEDs. Ambient light reflection of OLED using inorganic metal layer, polarizer and conventional metal layer were 29.2, 31.1 and 82.5% respectively. Optical characteristics of OLEDs using inorganic metal layer were max luminescence of 13040 cd/m2 and luminous efficiency of 2.12 cd/A at 8V whereas OLEDs using polarizer has 8456 cd/m2 and 1.43 cd/A at 8V each. OLEDs including inorganic metal multi layers show significant technical advantages in achieving high performance of OLED display with improved contrast ratio of 251:1, specifically in Red OLED.

• 한국주조공학회지
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• 제13권1호
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• pp.42-49
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• 1993

Conventional manufacturing process for cast iron-babbitt metal composite is complicate and bimetallic bonding by centrifugal casting is also difficult because their melting point is largely different and nonmetallic inclusion exists on outer shell. This study is aiming to simplify multistage process by adding Cu-powder as insert metals during cast iron solidification. The variables on fabrication of composite pipe are mold rotating speed and inner surface temperature of outer metal. The optimum temperature range for fusion bonding between cast iron and Cu-layer was $1100^{\circ}C-1140^{\circ}C$ in case of mold rotating speed was 700rpm. When the inner surface of Cu-layer was at $900^{\circ}C$, the value of interfacial hardness between Cu-layer and babbitt metal were higher than Cu-matrix by forming diffusion layer, interfacial products between Cu-layer and babbitt metal are proved to be $Cu_6Sn_5({\eta})$by XRD.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.377-377
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• 2011

Organic solar cells (OSCs) with low cost have been studied to apply on flexible substrate by solution process in low temperature [1]. In previous researches, conventional organic solar cell was composed of metal oxide anode, buffer layer such as PEDOT:PSS, photoactive layer, and metal cathode with low work function. In this structure, indium tin oxide (ITO) and Al was generally used as metal oxide anode and metal cathode, respectively. However, they showed poor reliability, because PEDOT:PSS was sensitive to moisture and air, and the low work function metal cathode was easily oxidized to air, resulting in decreased efficiency in half per day [2]. Inverted organic solar cells (IOSCs) using high work function metal and buffer layer replacing the PEDOT:PSS have focused as a solution in conventional organic solar cell. On the contrary to conventional OSCs, ZnO and TiO2 are required to be used as a buffer layer, since the ITO in IOSC is used as cathode to collect electrons and block holes. The ZnO is expected to be excellent electron transport layer (ETL), because the ZnO has the advantages of high electron mobility, stability in air, easy fabrication at room temperature, and UV absorption. In this study, the IOSCs based on poly [N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) : [6,6]-phenyl C71 butyric acid methyl ester (PC70BM) were fabricated with the ZnO electron-transport layer and MoO3 hole-transport layer. Thickness of the ZnO for electron-transport layer was controlled by rotation speed in spin-coating. The PCDTBT and PC70BM were mixed with a ratio of 1:2 as an active layer. As a result, the highest efficiency of 2.53% was achieved.

• Tribology and Lubricants
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• 제13권1호
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• pp.42-52
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• 1997

This paper deals with wear characteristics of ion-nitrided metal theoretically and experimentally in order to analysis of wear phenomena. Wear tests show that compound layer of ion-nitrided metal reduces wear rate when the applied wear load is mall. However, as th load becomes large, the existence of compound layer tends to increase wear rate. The residual stress at the surface of ion-nitrided metal is measured, and the internal stress distribution is calculated when the normal and tangential forces are applied to the surface of metal. Compressive residual stress is largeest at the compound layer, and decreases as the depth from the surface increases. Calculation shows that the maximum stress exists at a certain depth from the surface when normal and tangential force are applied, and that the larger the wear load is the deeper the location of maximum stress becomes. In the analysis, it is found that under small applied wear load the critical depth, where voids and cracks may be created and propagated, is located at the compound layer, as the adhesive wear, where hardness is an important factor, is created the existence of compound layer reduces the amount of wear. When the load becomes large the critical depth is located below the compound layer, and delamination, which may be explained by surface deformation, crack nucleation and propagation, is created, and the existence of compound layer increases wear rate.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.470-480
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• 2016

The reversal of a silicon chip to find out its security structure is common and possible at the present time. Thanks to reversing, it is possible to use a probing attack to obtain useful information such as personal information or a cryptographic key. For this reason, security-related blocks such as DES (Data Encryption Standard), AES (Advanced Encryption Standard), and RSA (Rivest Shamir Adleman) engines should be located in the lower layer of the chip to guard against a probing attack; in this regard, the addition of a silicon-surface-protection layer onto the chip surface is a crucial protective measure. But, for manufacturers, the implementation of an additional silicon layer is burdensome, because the addition of just one layer to a chip significantly increases the overall production cost; furthermore, the chip size is increased due to the bulk of the secure logic part and routing area of the silicon protection layer. To resolve this issue, this paper proposes a practical silicon-surface-protection method using a metal layer that increases the security level of the chip while minimizing its size and cost. The proposed method uses a shift register for the alternation and variation of the metal-layer data, and the inter-connection area is removed to minimize the size and cost of the chip in a more extensive manner than related methods.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1081-1081
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• 2002

Top emission organic EL devices were fabricated by using metal-doped cathode interface layer to achieve low drive voltages. Also, facing-targets-type sputtering was used to sputter indium-tin oxide layer on top of organic active layer. The devices fabricated in this study showed reasonably high external quantum efficiency of about 1 % which is comparable to that of bottom-emission-type devices.

• 센서학회지
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• 제14권6호
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• pp.423-429
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• 2005

In this paper, we proposed the fabrication process of the stable e-beam evaporation and the patterning of metals layer on the polydimethylsiloxane (PDMS) substrate. The metal layer was deposited under the various deposition rate, and its effect to the electrical and mechanical properties (e.g.: adhesion-strength of metal layer) was investigated. The influence of surface roughness to the adhesion-strength was also examined via the tape test. Here, we varied the roughness by changing the reactive ion etching (RIE) duration. The electrode patterning was performed through the conventional photolithography and chemical etching process after e-beam deposition of $200{\AA}$ Ti and $1000{\AA}$ Au. As a result, the adhesion strength of metal layer on the PDMS surface was greatly improved by the oxygen plasma treatment. The e-beam evaporation on the PDMS surface is known to create the wavy topography. Here, we found that such wavy patterns do not effect to the electrical and mechanical properties. In conclusion, the metal patterns with minimum $20{\mu}m$ line width was produced well via the our fabrication process, and its electrical conductance was almost similar to the that of metal patterns on the silicon or glass substrates.