• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.57-65
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• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1216-1219
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• 1994

A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating $100{\AA}$ $In_{0.05}Ga_{0.95}As$ barrier and $100{\AA}$ GaAs layers. And a multilayer reflector stack of $Al_{0.12}Ga_{0.88}As(641{\AA})-/AlAs(774{\AA})$ was vertically integrated below the p-i-n structures. The device processing includes the mesa etching, insulator deposition, indium metallization, and thermal alloy for Ohmic contact. Photocurrent spectrum measurement showed the exciton absorption peak at 905nm and availability as a optical switching device. This device showed a contrast ratio of 2:1 by the reflectance spectrum measurement.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.88-97
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• 1994

We describe the design, fabrication, and performance of the optical fiber-photodiode 1$\times$12 arry module using mesa-type InS10.53T GaS10.47TAS/INP 1$\times$12 PIN photodiode array. We fabricated the PIN PD array for high-speed optical fiber parallel data link optimizing quantum efficiency, operating speed sensitivity from the PIN-FET structure, and electrical AC crosstalk. For each element of the array, the diameter of the photodetective area is 80 $\mu$m, the diameter of the p-metal pad is 90 $\mu$m, and the photodiode seperation is 250 $\mu$m to use Si v-groove. Ground conductor line is placed around diodes and p-metal pads are formed in zigzag to reduce Ac capacitance coupling between array elements. The dark current (IS1dT) is I nA and the capacitance(CS1pDT) is 0.9 pF at -5 V. No signifcant variations of IS1dT and CPD from element to element in the array were observed. We calulated the coupling efficiency for 10/125 SMF and 50/125 GI MMF, and measured the responsivity of the PD array at the wavelength is 1.55 $\mu$ m. Responsivities are 0.93 A/W for SMF and 0.96 A/W for MMF. The optical fiber-PD array module is useful in numerous high speed digital and analog photonic system applications.

• ETRI Journal
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• v.13 no.4
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.724-728
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• 2004

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1155-1159
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• 2006

In this paper, we have proposed a privacy protection RFID system using random number based ID allocation. Currently, there are rising issues about privacy violation in RFID system. This issues caused by tracking the ID of tag which present unique identity of tag. The proposed system dynamically allocates random basis ID to tag, then the tag can not be traced. The random ID allocation procedures of this system can be operate in cryptographic mode or normal(non-cryptographic) mode. This system can be applied to privacy protected customer tracking RFID system in mesa-outlet stores which tracing customer's moving path.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.13-16
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• 2004

The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than $10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.207-212
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• 1999

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.432-435
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• 2005

The Mega-pixel camera phones become main trends in mobile phone market. The lens modules used in mesa-pixel camera phones need high resolution. One of the main factors of resolution drop is the defects of bare lens. Though there are many advantages in auto-inspection of defects of bare lens, high technical problems take the defect inspections to be done with manual process. In this paper, the type and the source of defects were described and bare lens defect auto-inspection system design was explained. The designed auto-inspection system is composed of illumination optics part, focusing optics part and auto-moving system. With the proposed auto-inspection system, fast and uniform inspection of bare lens can be achieved.

• Journal of Science Education
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• v.43 no.1
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• pp.1-16
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• 2019

This exploratory study is aimed at exploring the validity of the Science Motivation Questionnaire (SMQ) developed for university students, to measure the science motivation of middle school students and analyze the differences on gender and country factors of SMQ. A total of 371 students participated in this study: 171 middle school students from the USA and 200 secondary students from Korea. All participants were enrolled in the STEM program and activities in Utah, USA (for US students) and at a Korean university institute for gifted and talented students (for Korean students). In this study, exploratory and confirmatory factor analyses and latent mean analysis were used to analyze the gender and country differences. The results indicated that the 25 items of SMQ scale were theoretically meaningful and valid for middle school students. The latent mean difference by gender indicated that male students have higher intrinsic motivation, career motivation, grade motivation, and self-determination than female students. Moreover, a significant difference exists in these factors between the two countries. Further findings reveal that Korean students scored higher than US students in terms of the aforementioned factors. This study will provide significant insights in and contribution to science motivation issues in STEM education and the development of design-based engineering programs.