• Journal of the Korean Vacuum Society
• /
• v.8 no.4B
• /
• pp.541-547
• /
• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.10
• /
• pp.33-40
• /
• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• The Bulletin of The Korean Astronomical Society
• /
• v.39 no.2
• /
• pp.88.1-88.1
• /
• 2014

Helium mass in the envelope is one of the most important properties in progenitors of type Ib/c supernovae (SNe Ib/c), since SN Ib/c progenitors are distinguished by the presence of He I lines. However, previous progenitor models do not reproduce the required He mass limit($M_{He}$ < $0.14M_{\odot}$) suggested by a spectroscopic analysis of SN Ib/c. In this work, we investigated the effect of overshooting on the evolution of pure helium stars, focusing on the final He mass in the envelope, $M_{He,f}$. We used the MESA code to calculate single helium star models with the initial masses of $M_{init}=5{\sim}30M_{\odot}$, Z=0.02, 0.04 and overshooting parameters of $f_{ov}=0{\sim}0.4$. The final He mass $M_{He,f}$ decreases as $f_{ov}$ increases, due to larger burning core compared to weak overshooting models. Dependence of the final mass $M_{He,f}$ on overshooting is strongest for models with $M_{init}=7{\sim}10M_{\odot}$, and this effect originates from accelerated mass loss during transition between WNE and WC/O phase. However, $M_{He,f}$ exceeds $0.27M_{\odot}$ for all models, which still doesn't meet the criteria of $M_{He}$ < $0.14M_{\odot}$. This implies that mass loss during the post helium burning phase must be enhanced dramatically compared to what the standard models predict.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.892-895
• /
• 2003

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. During RIE of 3C-SiC films in this work, $CHF_3$ gas is used to form of polymer as a side wall for excellent anisotropy etching. From this process, etch rates are obtained a $60{\sim}980{\AA}/min$ by various conditions such as $CHF_3$ gas flux, $O_2$ addition ratio, RF power and electrode distance. Also, approximately $40^{\circ}$ mesa structures are successfully formed at 100 mTorr $CHF_3$ gas flow ratio, 200 W RF power and 30 mm electrode distance. Moreover, vertical side wall is fabricated by anisotropy etching with 50% $O_2$ addition ratio and 25 mm electrode distance. Therefore, RIE of 3C-SiC films using $CHF_3$ could be applicable as fabrication process technology for high-temperature 3C-SiC MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.347-348
• /
• 2008

The main goal of this work is advances in 1.0mm $\times$ 0.5mm light emitting diode using AlInGaN cell structure and display module. In the first place, we proposed $200{\mu}m{\times}200{\mu}m$ cell structure using AlInGaN. Secondly, we describe new type 1.0mm $\times$ 0.5mm blue and white LED fabrication procedure and results of an examination include mobile application.

• Progress in Superconductivity
• /
• v.11 no.2
• /
• pp.118-122
• /
• 2010

Electrical transport properties were measured on $SmFeAsO_{0.85}$ single crystals along the c-axis for various temperatures and magnetic fields. For the measurements a mesa structure was fabricated on the surface of the single crystals. Samples showed a metallic temperature dependence of resistance and current-voltage curves without hysteretic multiple branch splitting that is usually observed in tunneling Josephson junctions. In addition, in ab-planar magnetic fields, samples did not show the Fraunhofer-type field modulation of the critical current. All these features indicate that the c-axis transport characteristics of $SmFeAsO_{0.85}$ single crystals are explained by the anisotropic bulk superconductivity rather than Josephson tunneling.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.9
• /
• pp.104-113
• /
• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Korean Journal of Microbiology
• /
• v.38 no.4
• /
• pp.275-275
• /
• 2002

Pseudomonas sp. S-47 is capable of catabolizing 4-chlorobenzoate (4CBA) as carbon and energy sources under aerobic conditions via the mesa-cleavage pathway. 4CBA-dioxygenase and 4CBA-dihydrodiol dehydrogenase (4CBA-DD) catalyzed the degradation af 4CBA to produce 4-chlorocatechol in the pathway. In this study, the xylL gene encoding 4CBA-DD was cloned from the chromosomal DNA of Pseudomonas sp. S-47 and its nucleotide sequence was analyzed. The xylL gene was found to be composed of 777 nucleotide pairs and to encode a polypeptide of 28 kDa with 258 amino acid residues. The deduced amino acid sequence of the dehydrogenase (XylL) from strain S-47 exhibited 98% and 60% homologies with these of the corresponding enzymes, Pseudomonas putida mt-2 (XyIL) and Acinetobacter calcoaceticus (BenD), respectively. However, the amino arid sequences show 30% or less homology with those of Pseudomonas putida (BnzE), Pseudomonas putida Fl (TodD), Pseudomonas pseudoalcaligenes KF707 (BphB), and Pseudomonas sp. C18 (NahB). Therefore, the 4CBA-dihydrodiol dehdrogenase of strain S-47 belongs to the group I dehydrogenase involved in the degradation of mono-aryls with a carboxyl group.

• Progress in Superconductivity
• /
• v.3 no.1
• /
• pp.28-30
• /
• 2001

We studied the flux-flow current-voltage characteristics of microwave-generated fluxons formed in serially stacked intrinsic Josephson junctions fabricated on$ HgI_2$-intercalated $Bi_2$$Sr_2$$CaCu_2$O/8+x/(Bi2212) single crystals. With increasing the irradiation power of 73$\square$76 GHz microwave, the supercurrent branch became resistive and split into multiple sub -branches. Each sub-branch represented a specific mode of collective motion of Josephson fluxons. We also observed similar branch splitting In a mesa prepared on an underdoped Bi2212 single crystal in a static magnetic field.

• Journal of Korean Society for Atmospheric Environment
• /
• v.14 no.3
• /
• pp.191-208
• /
• 1998

Estimations of dry and wet depositions in Korea and the size distributions of yellow sand above Korea have been carried out using the Eulerian aerosol model with the simulated meteorological data from the SNU mesoscale meteorological model. The estimated particle size distribution in Korea shows a bimodal distribution with peak values at 0.6 pm and 7 pm and a minimum at 2 pm in the lower layer However, as higher up, the bimodal distribution becomes an unimodal distribution with a peak value at 4∼5mm. Among the total amount of yellow sand deflated in the source regions , the dry and wet deposition fluxes were about 92%, and about 1.3∼0.5%, repectively, and the rest(5∼6%) is suspended in the air, Most of dust lifted in the air during the clear weather is deposited in the vicinity of the source regions by dry deposition and the rest undergoes the long -range transport with a gradual removal by the wet deposition processes. Over Korean peninsula, the total amount of yellow sand suspended in the air was about 6∼8% of the emissions in the source region and the dry and wet deposition fluxes were about 0.005∼0.7% and 0.003∼0.051% of the total emitted amount, repectively. It is estimated that 2.7∼8.9 mesa-tons of yellow sand is transported annually over the Korean peninsula with the annual mean dry deposition of 2.1∼490 kilo-tons and the annual mean wet deposition of 1.5∼65 kilo-tons.