• Title/Summary/Keyword: memory testing

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A Built-In Redundancy Analysis with a Minimized Binary Search Tree

  • Cho, Hyung-Jun;Kang, Woo-Heon;Kang, Sung-Ho
    • ETRI Journal
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    • v.32 no.4
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    • pp.638-641
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    • 2010
  • With the growth of memory capacity and density, memory testing and repair with the goal of yield improvement have become more important. Therefore, the development of high efficiency redundancy analysis algorithms is essential to improve yield rate. In this letter, we propose an improved built-in redundancy analysis (BIRA) algorithm with a minimized binary search tree made by simple calculations. The tree is constructed until finding a solution from the most probable branch. This greatly reduces the search spaces for a solution. The proposed BIRA algorithm results in 100% repair efficiency and fast redundancy analysis.

A Concurrent Testing of DRAMs Utilizing On-Chip Networks (온칩네트워크를 활용한 DRAM 동시 테스트 기법)

  • Lee, Changjin;Nam, Jonghyun;Ahn, Jin-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.82-87
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    • 2020
  • In this paper, we introduce the novel idea to improve the B/W usage efficiency of on-chip networks used for TAM to test multiple DRAMs. In order to avoid the local bottleneck of test packets caused by an ATE, we make test patterns using microcode-based instructions within ATE and adopt a test bus to transmit test responses from DRAM DFT (Design for Testability) called Test Generator (TG) to ATE. The proposed test platform will contribute to increasing the test economics of memory IC industry.

A Study of the Exclusive Embedded A/D Converter Using the Microprocessor and the Noise Decrease for the Magnetic Camera (마이크로프로세서를 이용한 자기카메라 전용 임베디드형 AD 변환기 및 잡음 감소에 관한 연구)

  • Lee, Jin-Yi;Hwang, Ji-Seong;Song, Ha-Ryong
    • Journal of the Korean Society for Nondestructive Testing
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    • v.26 no.2
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    • pp.99-107
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    • 2006
  • Magnetic nondestructive testing is very useful far detecting a crack on the surface or near of the surface of the ferromagnetic materials. The distribution of the magnetic flux leakage (DMFL) on a specimen has to be obtained quantitatively to evaluate the crack. The magnetic camera is proposed to obtain the DMFL at the large lift-off. The magnetic camera consists of a magnetic source, magnetic lens, analog to digital converters (ADCs), interface, and computer. The magnetic leakage fields or the distorted magnetic fields from the object, which are concentrated on the magnetic lens, are converted to analog electrical signals tv arrayed small magnetic sensors. These analog signals are converted to digital signals by the ADCs, and are stored, imaged, and processed by the interface and computer. However the magnetic camera has limitations with respect to converting and switching speed, full range and resolution, direct memory access (DMA), temporary storage speed and volume because common ADCs were used. Improved techniques, such as those that introduce the operational amplifier (OP-Amp), amplify the signal, reduce the connection line, and use the low pass filter (LPF) to increase the signal to noise ratio are necessary. This paper proposes the exclusive embedded ADC including OP-Amp, LPF, microprocessor and DMA circuit for the magnetic camera to satisfy the conditions mentioned above.

Design and Implementation of Asynchronous Memory for Pipelined Bus (파이프라인 방식의 버스를 위한 비 동기식 주 기억장치의 설계 및 구현)

  • Hahn, Woo-Jong;Kim, Soo-Won
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.31B no.11
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    • pp.45-52
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    • 1994
  • In recent days low cost, high performance microprocessors have led to construction of medium scale shared memory multiprocessor systems with shared bus. Such multiprocessor systems are heavily influenced by the structures of memory systems and memory systems become more important factor in design space as microprocessors are getting faster. Even though local cache memories are very common for such systems, the latency on access to the shared memory limits throughput and scalability. There have been many researches on the memory structure for multiprocessor systems. In this paper, an asynchronous memory architecture is proposed to utilize the bandwith of system bus effectively as well as to provide flexibility of implementation. The effect of the proposed architecture if shown by simulation. We choose, as our model of the shared bus is HiPi+Bus which is designed by ETRI to meet the requirements of the High-Speed Midrange Computer System. The simulation is done by using Verilog hardware decription language. With this simulation, it is explored that the proposed asynchronous memory architecture keeps the utilization of system bus low enough to provide better throughput and scalibility. The implementation trade-offs are also described in this paper. The asynchronous memory is implemented and tested under the prototype testing environment by using test program. This intensive test has validated the operation of the proposed architecture.

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Design of PMOS-Diode Type eFuse OTP Memory IP (PMOS-다이오드 형태의 eFuse OTP IP 설계)

  • Kim, Young-Hee;Jin, Hongzhou;Ha, Yoon-Gyu;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.1
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    • pp.64-71
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    • 2020
  • eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

FlaSim: A FTL Emulator using Linux Kernel Modules (FlaSim: 리눅스 커널 모듈을 이용한 FTL 에뮬레이터)

  • Choe, Hwa-Young;Kim, Sang-Hyun;Lee, Seoung-Won;Park, Sang-Won
    • Journal of KIISE:Computing Practices and Letters
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    • v.15 no.11
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    • pp.836-840
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    • 2009
  • Many researchers have studied flash memory in order to replace hard disk storages. Many FTL algorithms have been proposed to overcome physical constraints of flash memory such as erase-before-write, wear leveling, and poor write performance. Therefore, these constraints should be considered for testing FTL algorithms and the performance evaluation of flash memory. As doing the experiments, we suffer from several problems with costs and settings in experimental configuration. When we, for example, replay the traces of Oracle to evaluate the I/O performance with flash memory, it is hard to extract exact traces of I/O operations in Oracle. Since there are only write operations in the log, it is impossible to gather read operations. In MySQL and SQLite, we can gather the read operations by changing I/O functions in the source codes. But it is not easy to search for the exact points about I/O and even if we can find out the points, we might get wrong results depending on how we modify source codes to get I/O traces. The FlaSim proposed in this paper removes the difficulties when we evaluate the performance of FTL algorithms and flash memory. Our Linux drivers emulate the flash memory as a hard disk. And we can easily obtain the usage statistics of flash memory such as the number of write, read, and erase operations. The FlaSim can be gracefully extended to support the additional modules implemented by novel algorithms and ideas. In this paper, we describe the structure of FTL emulator, development tools and operating methods. We expect this emulator to be helpful for many experiments and research with flash memory.

Wireless Impedance-Based SUM for Bolted Connections via Multiple PZT-Interfaces

  • Nguyen, Khac-Duy;Kim, Jeong-Tae
    • Journal of the Korean Society for Nondestructive Testing
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    • v.31 no.3
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    • pp.246-259
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    • 2011
  • This study presents a structural health monitoring (SHM) method for bolted connections by using multi-channel wireless impedance sensor nodes and multiple PZT-interfaces. To achieve the objective, the following approaches are implemented. Firstly, a PZT-interface is designed to monitor bolt loosening in bolted connection based on variation of electro-mechanical(EM) impedance signatures. Secondly, a wireless impedance sensor node is designed for autonomous, cost-efficient and multi-channel monitoring. For the sensor platform, Imote2 is selected on the basis of its high operating speed, low power requirement and large storage memory. Finally, the performance of the wireless sensor node and the PZT-interfaces is experimentally evaluated for a bolt-connection model Damage monitoring method using root mean square deviation(RMSD) index of EM impedance signatures is utilized to estimate the strength of the bolted joint.

Study on Source Waye hnalysis in Crack Growth by AE Method (AE법(法)에 의한 균열성장의 Source Wave해석(解析)에 관(關)한 연구(硏究))

  • Han, Eung-Kyo;Kim, Tong-Kyu;Choi, Man-Yong;Kim, Kyung-Suk
    • Journal of the Korean Society for Nondestructive Testing
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    • v.3 no.2
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    • pp.5-12
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    • 1984
  • The purpose of this paper is to decide volume of crack by AE source wave analysis. The material studied in this paper was Titanium Alloy. Transient wave memory has 50 nano sampling time. The response function of specimens and transducer was obtained experimentally by use of specimens and transducer was obtained experimentally by use of breaking pencil lead as a reference simulated AE source, and the source waves were dertermined in terms of energy release-time functions explicitly through a time domain deconvolution. From experimental results, we can determine size of cracked volume.

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Testing of Stochastic Trends, Seasonal and Cyclical Components in Macroeconomil Time Series

  • Gil-Alana Luis A.
    • Communications for Statistical Applications and Methods
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    • v.12 no.1
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    • pp.101-115
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    • 2005
  • We propose in this article a procedure for testing unit and fractional orders of integration, with the roots simultaneously occurring in the trend, the seasonal and the cyclical component of the time series. The tests have standard null and local limit distributions. However, finite sample critical values are computed, and several Monte Carlo experiments conducted across the paper show that the rejection frequencies against unit (and fractional) orders of integration are relatively high in all cases. The tests are applied to the UK consumption and income series, the results showing the importance of the roots corresponding to the trend and the seasonal components and, though the unit roots are found to be fairly suitable models, we show that fractional processes (including one for the cyclical component) may also be plausible alternatives in some cases.

Built-in self test for high density SRAMs using parallel test methodology (병렬 테스트 방법을 적용한 고집적 SRAM을 위한 내장된 자체 테스트 기법)

  • 강용석;이종철;강성호
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.8
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    • pp.10-22
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    • 1998
  • To handle the density increase of SRAMs, a new parallel testing methodology based on built-in self test (BIST) is developed, which allows to access multiple cells simultaneously. The main idea is that a march algorithm is dperformed concurently in each baisc marching block hwich makes up whole memory cell array. The new parallel access method is very efficient in speed and reuqires a very thny hardware overhead for BIST circuitry. Results show that the fault coverage of the applied march algorithm can be achieved with a lower complexity order. This new paralle testing algorithm tests an .root.n *.root.n SRAM which consists of .root.k * .root.k basic marching blocks in O(5*.root.k*(.root.k+.root.k)) test sequence.

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