• International journal of advanced smart convergence
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• v.12 no.1
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• pp.70-75
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• 2023

With the recent proliferation of memory-intensive workloads such as deep learning, analyzing memory access characteristics for efficient memory management is becoming increasingly important. Since read and write operations in memory access have different characteristics, an efficient memory management policy should take into accountthe characteristics of thesetwo operationsseparately. Although some previous studies have considered the different characteristics of reads and writes, they require a modified hardware architecture supporting read bits and write bits. Unlike previous approaches, we propose a software-based management policy under the existing memory architecture for considering read/write characteristics. The proposed policy logically partitions memory space into the read/write area and the write area by making use of reference bits and dirty bits provided in modern paging systems. Simulation experiments with memory access traces show that our approach performs better than the CLOCK algorithm by 23% on average, and the effect is similar to the previous policy with hardware support.

• Biomolecules & Therapeutics
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• v.24 no.3
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• pp.298-304
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• 2016

Dianthus superbus (D. superbus) is a traditional crude drug used for the treatment of urethritis, carbuncles and carcinomas. The objective of this study was to confirm the cognitive enhancing effect of D. superbus in memory impairment induced mice and to elucidate the possible potential mechanism. Effect of D. superbus on scopolamine induced memory impairment on mice was evaluated using the Morris water maze and passive avoidance tests. We also investigated acetylcholinesterase (AChE) activity and brain-derived neurotropic factor (BDNF) expression in scopolamine-induced mice. HPLC-DAD analysis was performed to identify active compounds in D. superbus. The results revealed that D. superbus attenuated the learning and memory impairment induced by scopolamine. D. superbus also inhibited AChE levels in the hippocampi of the scopolamine-injected mice. Moreover, D. superbus increased BDNF expression in the hippocampus. Eight compounds were identified using HPLC-DAD analysis. The content of 4-hydroxyphenyl acetic acid was higher than contents of other compounds. These results indicated that D. superbus improved memory functioning accompanied by inhibition of AChE and upregulation of BDNF, suggesting that D. superbus may be a useful therapeutic agent for the prevention or treatment of Alzheimer's disease.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.186-191
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• 2001

Tensile residual stress happen by difference of coefficients of thermal expansion between fiber and matrix is one of the serious problems in metal matrix composite(MMC). In this study, TiNi alloy fiber was used to solve the problem of the tensile residual stress as the reinforced material. TiNi alloy fiber improves the tensile strength of composite by occurring compressive residual stress in matrix using shape memory effect of it. Pre-strain was added to generate compressive residual stress inside TiNi/A16061 shape memory alloy(SMA) composite. It was also evaluated the effect of compressive residual stress corresponding to pre-strains variation and volume fraction of TiNi alloy. AE technique was used to clarify the microscopic damage behavior at high temperature and the effect of pre-strain difference of TiNi/A16061 SMA composite. In addition, two dimensional AE source location technique was applied to inspect the crack initiation and propagation in composite.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.72-77
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• 2001

Tensile residual stress happen by difference of coefficients of thermal expansion between fiber and matrix is one of the serious problems in metal matrix composite(MMC). In this study, TiNi fiber was used to solve the tensile residual stress as the reinforced material. TiNi fiber improves the tensile strength of composite by occurring compressive residual stress in matrix using shape memory effect of it. Pre-strain was added to generate compressive residual stress inside TiNi/A16061 composite. It was also evaluated the effect of compressive residual stress corresponding to pre-strains variation. AE technique was used to clarify the microscopic damage behavior at high temperature and the effect of pre-strain difference of TiNi/A16061 shape memory alloy composite.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Science of Emotion and Sensibility
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• v.15 no.4
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• pp.527-540
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• 2012

We examined the effect of delayed and immediate rewards on short- and long-term memory performance depending on the level of stress. It has been demonstrated that delaying feedback during memory tasks could lead to better retention than presenting it immediately (a.k.a., feedback delay benefit or delay-retention effect). In this study, we manipulated stress level(high-stress or low-stress), reward-timing(delayed or immediate reward), reward-existence(500 or 0 won) and retrieval-timing(delayed or immediate memory test). On the high-stress learning condition, one week later, the number of correct answers with delayed-rewards were significantly more than that of delayed-no-rewards but there was not any difference between immediate-rewards and immediate-no-rewards. On the other hand, in the high-stressful immediate memory test, immediate-rewards only had a positive effect on memory performance. The results indicated that delayed rewards improved long-term memory performance by promoting memory consolidation and the sensitivity to rewards was higher under the high-stress condition.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.1
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• pp.43-49
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• 2003

In this study, micro electrochemical machining method was introduced for accomplishment the fabrication technology of functional parts and smart structures using the Ni-Ti shape memory alloy. From the experimental result, the micro part which has very fine surface could be achieved by use of micro electrochemical process with point electrode method. Concretely, the optimal performance of micro electrochemical process in Ni-Ti SMA was obtained at the condition of approximately 100% of current efficiency and high frequency pulse current. That is, much finer surface integrity and shape memory effect can be obtained at the same condition mentioned above.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.182-183
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• 2006

An electromagnetic memory effect observed in superconducting YBCO system was studied. From the measurement of differential conductance, it was cleared that the mechanism of electromagnetic memory can not be explained by using conventional flux flow model. By changing the density of external magnetic flux, changes m inductance of a coil in which a superconducting bar is inserted were also measured. It was concluded that the electromagnetic memory effect aries from the interaction between the trapped magnetic flux and the weak link of the filament formed in the superconducting bar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.348-349
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• 2005

An electromagnetic memory effect observed in superconducting YBCO system was studied. From the measurement of differential conductance, it was cleared that the mechanism of electromagnetic memory can not be explained by using conventional flux flow model. By changing the density of external magnetic flux, changes in inductance of a coil in which a superconducting bar is inserted were also measured. It was concluded that the electromagnetic memory effect aries from the interaction between the trapped magnetic flux and the weak link of the filament formed in the superconducting bar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.292-293
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• 2005

An electromagnetic memory effect observed in superconducting YBCO system was studied. From the measurement of differential conductance, it was cleared that the mechanism of electromagnetic memory can not be explained by using conventional flux flow model. By changing the density of external magnetic flux, changes in inductance of a coil in which a superconducting bar is inserted were also measured. It was concluded that the electromagnetic memory effect aries from the interaction between the trapped magnetic flux and the weak link of the filament formed in the superconducting bar.