• 한국전자통신학회논문지
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• 제4권4호
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• pp.301-305
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• 2009

Pt 나노입자의 합성과 이를 이용한 hybrid Pt-$SiO_2$ 나노입자의 합성을 성공적으로 수행하였으며, self-assembled Pt nanoparticles monolayer를 charge trapping layer로 활용하는 metal-oxide-semiconductor(MOS) type memory의 한 예로 non-volatile memory(NVM)의 응용을 보임으로써 나노입자의 활용 가능성을 보이고, 또한, hybrid Pt-$SiO_2$ 나노입자 박막 층의 제어를 통한 MOS type memory device에의 보다 더 넓은 활용 가능성을 보이고자 하였다.

• 한국진공학회지
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• 제17권4호
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• pp.253-261
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• 2008

Programmable metalization cell (PMC) memory 소자로도 명명되는 고체 전해질 메모리 소자는 비휘발성, 고속 및 높은 ON/OFF 저항비 등을 갖고 있기 때문에, 차세대 비휘발성 메모리로서 각광받고 있는 소자 중의 하나이다. 본 논문에서는 고체 전해질 메모리 소자의 동작 원리를 먼저 소개하고자 한다. 또한, 메모리향 소자 개발을 진행 중인 미국 코지키 교수 그룹, 비메모리향 소자 개발을 진행 중인 일본 NEC 그룹 등의 해외 연구진과, Te 계열의 칼코게나이드 합금을 채택하여 소자를 제작한 한국전자통신연구원 및 충남대학교 등의 국내 연구진의 연구 성과를 소개하고자 한다.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.669-673
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• 2011

The charged particle type display is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source, which has keep an image without additional electric power because of bistability. In this paper, we made a device whose cell gap is $56\;{\mu}m$ and also analyzed driving and memory characteristics by applied driving voltages. As a result, we found that the driving voltage and memory effect depend on q/m(charge to mass ratio) of charged particle. In this case of breakdown voltage, the devices showed degradation of reflectivity and memory effect due to irregular movement of overcharged particles. In addition, contrast ratio of the device varies with memory effect. Thus, we consider that device needs uniform q/m for improvement of electric and optical properties and memory effect.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.188-189
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• 2002

One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

• 한국통신학회논문지
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• 제29권4B호
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• pp.403-410
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• 2004

일반적으로 교환 시스템은 프로세서 보드, 입출력처리 보드 및 데이터 저장 장치등 그 기능별로 다수의 서브시스템들로 구성되어 있다. 또한 신뢰성을 확보하기 위하여 모든 서브 보드들은 이중화로 되어 있다. 교환시스템에서 저장 장치에는 시스템에 관련된 정보나 과금 정보등과 같은 작업 관련 데이터를 저장하며 비 휘발성 메모리에 저장해야 한다. 일반적으로 비 휘발성 저장장치를 구현할 때는 플래시메모리(flash memory) 또는 배터리 백업 메모리(battery backup memory)를 사용한다. 그러나 메모리는 단위 용량당 가격이 높고 백업(backup) 하지 않은 데이터를 손실했을 때 복구할 수 없다. 본 논문에서는 마이크로 컨트롤러를 이용하여 단위 용량당 가격이 저렴하고, 대용량의 데이터를 저장함과 동시에 이중화를 만족시키는 on-board 형태의 소형 디스크 모듈을 설계 구현하였다. 본 논문에서 구현된 이중화 저장장치는 사용 중인 엑티브(active) 디스크에 결함이 생겨 사용할 수 없을 경우에 리빌딩(rebuilding)과정을 동해 스탠바이 모듈로부터 데이터를 복구하며, 리빌딩 중에도 호스트 시스템은 스탠바이 디스크모듈을 이용하여 지속적으로 서비스를 제공할 수 있도록 설계되었다. 본 연구에서 개발된 저장장치는 교환시스템에서 플래시 메모리와 같은 값비싼 저장 장치를 대체 할 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.495-498
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• 1998

Mobile computers have restrictions for size, weight, and power consumption that are different from traditional workstations. Storage device must be smaller, lighter. Low power consumed storage devices are needed. At the present time, flash memory device is a reasonable candidate for such device. But flash memory has drawbacks such as bulk erase operation and slow program time. This causes of worse average write performances. This paper suggests a storage method which improves write performance.

• 반도체디스플레이기술학회지
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• 제14권2호
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• Journal of Information Display
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• 제10권4호
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• pp.184-187
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• 2009

A liquid crystal device with switchable dynamic and memory modes was investigated and developed. The proposed device reveals the splay, $\pi$-twist, and bend states via selective switching among them. In the dynamic mode, the device is operated in the bend state, which exhibits a wide viewing-angle and a fast-response-time due to its self-compensated bend structure and flow-accelerated fast response time, respectively. In the memory mode, the permanent memory characteristics in the splay and $\pi$-twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.600-603
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• 2009

The liquid crystal device with switchable dynamic mode and memory mode has been investigated and developed. The proposed device reveals splay, ${\pi}$ twist and bend states by selective switching among them. In the dynamic mode, this device is operated in the bend state which exhibits the wide view angle and fast response time properties due to the self-compensated bend structure and flow accelerated fast response time. In the memory mode, the permanent memory characteristics in the splay and ${\pi}$ twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.