• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.834-837
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• 2015

In this paper, we designed the FPGA hardware-based real-time ECG simulator, which generates an analog ECG signal within the range of 0 to 5 volts and described function. The ECG signal generated by the simulator can be applied to laboratory tests, the medical device, and the calibration study in various ways. ECG signals generated by simulator are obtained with conventional 24bit quantization to generate the signal data, and they are sampled and quantized to 1kHz of the 8-bit resolution when used as actual data. The proposed simulator is implemented using xilix Spartan-3 and data are transmitted through an RS-232 between the PC and the FPGA simulator. The transmitted data are stored in the memory and the stored data are printed out with the analog ECG signal through DAC (0808). It can also control the heart rate (HR) via the two buttons level UP-DOWN. We used existing ECG input rating for the evaluation of the designed system and evaluated differential circuit for obtaining QRS waveform and the output signal. We finally could obtained proper the result.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.4
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• pp.39-45
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• 2009

With the rapid growth of recent wireless mobile computing application technology and handheld mobile terminal device development technology, one of the big issue in these fields is to design online games in wireless mobile ad hoc network environment. Online games in mobile computing environment have lots of constraints for developing online games because mobile terminals have many limitations such as low performance of processor, limited memory space, small bandwidth of wireless communication, and confined life of battery power. Therefore, most of mobile games are restrictive in the function of online and multi-play up to date. In this paper, the online MMORPG game, capable of multi-play with many other mobile users using mobile terminals in wireless mobile computing environment, is designed and implemented. Proposed mobile online game uses bluetooth to construct temporary wireless mobile ad hoc network with other mobile clients, and designed to carry out online MMORPG game with these clients. It also supports multi-play among them.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.101-101
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• 2011

The control of magnetization by an electric field at room temperature remains as one of great challenges in materials science. Multiferroics, in which magnetism and ferroelectricity coexist and couple to each other, could be the most plausible candidate to realize this long-sought capability. While recent intensive research on the multiferroics has made significant progress in sensitive, magnetic control of electric polarization, the electrical control of magnetization, the converse effect, has been observed only in a limited range far below room temperature. Here we demonstrate at room temperature the control of both electric polarization by a magnetic field and magnetization by an electric field in a multiferroic hexaferrite. The electric polarization rapidly increases in a magnetic field as low as 5 mT and the magnetoelectric susceptibility reaches up to 3200 ps/m, the highest value in single phase materials. The magnetization is also modulated up to 0.34 mB per formula unit in an electric field of 1.14 MV/m. Furthermore, this compound allows nonvolatile, magnetoelectric reading- and writing-operations entirely at room temperature. Four different magnetic/electric field writing conditions generate repeatable, distinct M versus E curves without dissipation, offering an unprecedented opportunity for a multi-bit memory or a spintronic device applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.141-147
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• 2010

In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.382-386
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• 2002

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.749-764
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• 2000

Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.

• Convergence Security Journal
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• v.13 no.4
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• pp.101-108
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• 2013

Sensor network configurations are for a specific situation or environment sensors capable of sensing, processing the collected information processors, and as a device is transmitting or receiving data. It is presently serious that sensor networks provide many benefits, but can not solve the wireless network security vulnerabilities, the risk of exposure to a variety of state information. u-Healthcare sensor networks, the smaller the sensor node power consumption, and computing power, memory, etc. restrictions imposing, wireless sensing through the kind of features that deliver value, so it ispossible that eavesdropping, denial of service, attack, routing path. In this paper, with a focus on sensing of the environment u-Healthcare system wireless security vulnerabilities factors u-Healthcare security framework to diagnose and design methods are presented. Sensor network technologies take measures for security vulnerabilities, but without the development of technology, if technology is not being utilized properly it will be an element of threat. Studies suggest that the u-Healthcare System in a variety of security risks measures user protection in the field of health information will be used as an important guide.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.8B
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• pp.939-946
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• 2011

The Internet banking service provides convenience than the traditional offline services. However, it still causes a number of security problems including hacking. In order to strengthen security, the financial institutions have provided such authentication methods as the official authentication certificate, the security token, the security card and OTP. However, the incidents related to hacking have continuously occurred. Especially, various weak points have been suggested for the authentication methods in regard to such types of hacking as the memory hacking or the MITM attack. So I needed was a new authentication method. In this study, the two-channel authentication method which provide two-way authentication on the user's PC and mobile device when executing the electronic financial transactions in the Internet banking environment is suggested. Also, by analyzing it in comparison with other existing methods, it is possible to check that the prospects of safety and credibility are strengthened.