• Title/Summary/Keyword: mechanical circuits

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Damage Measurement for Molybdenum Thin Film Using Reflection-Type Digital Holography (반사형 디지털 홀로그래피를 이용한 Molybdenum 박막의 손상 측정)

  • Kim, Kyeong-Suk;Jung, Hyun-Il;Shin, Ju-Yeop;Ma, Hye-Joon;Kwon, Ik-Hwan;Yang, Seung-Pill;Hong, Chung-Ki;Jung, Hyun-Chul
    • Journal of the Korean Society for Nondestructive Testing
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    • v.35 no.2
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    • pp.141-149
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    • 2015
  • In the fabrication of electronic circuits used in electronic products, molybdenum thin films are deposited on semiconductors to prevent oxidation. During the deposition, the presence of a particle or dust at the interface between the thin film and substrate causes the decrease of adhesion, performance, and life cycle. In this study, a damage measurement targeting two kinds of glass substrate, with and without particles, was performed in order to measure the change in the molybdenum thin film deposition area in the presence of a particle. Clean and dirty molybdenum thin film specimens were fabricated and directly deposited on a substrate using the sputtering method, and a reflection-type digital holographic interferometer was configured for measuring the damage. Reflection-type digital holography has several advantages; e.g., the configuration of the interferometer is simple, the measurement range can be varied depending on the magnification of a microscopic lens, and the measuring time is short. The results confirm that reflection-type digital holography is useful for the measurement of the damage and defects of thin films.

A Study on the Improvement of Capstone Design Learning Achievement through the Design and Fabrication of Pneumatic Control Circuit (공압제어회로 설계 및 제작을 통한 캡스톤 디자인 학습 성취도 향상 연구)

  • Lee, Jongkil
    • Journal of Practical Engineering Education
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    • v.12 no.1
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    • pp.1-10
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    • 2020
  • The pneumatic control circuit is an important basic element that constitutes factory automation in the era of the 4th Industrial Revolution, and the ability to design and fabricate pneumatic control circuit at the university level is one of the most important educational courses. In this study, it introduced collaborative learning by group, and capstone design technique applied to the subject of design and fabricate of pneumatic control circuit. In addition, it intends to contribute to the innovation of practical engineering education by examining the learning achievement of students. It was investigated analytical skill differences by applying cooperative learning to the experimental group and by applying traditional lecture methods to the comparison group. The experimental group that conducted cooperative learning showed higher academic ability than the comparison group that conducted only traditional lectures, and the t-test results of the significant level p<0.05 also confirmed that there were significant differences between the two groups. It was also responded 13 survey questions in four experimental groups and analyzed the results, showing a high satisfaction level of 4.731 on average. Through this study the design and fabrication of the pneumatic control circuit is more effective in improving students' learning achievement when applying the capstone design technique than when operating as a normal subject and expected to use as a basic material for the development of the curriculum of Capstone design in the future.

Effects of DC Biases and Post-CMP Cleaning Solution Concentrations on the Cu Film Corrosion

  • Lee, Yong-K.;Lee, Kang-Soo
    • Corrosion Science and Technology
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    • v.9 no.6
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    • pp.276-280
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    • 2010
  • Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

Applying Rosen-type PZT plasma generation device for medical applications (로젠형 압전변압기를 적용한 의료융합 플라즈마기기)

  • Lee, Kang-yeon;Jung, Byung-Geun;Park, Jeong-sook;Park, Ju-Hoon;Jeong, Byeong-Ho
    • Journal of the Korea Convergence Society
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    • v.12 no.1
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    • pp.243-250
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    • 2021
  • In the medical field, applications of plasma are applied sterilize instruments mainly but with the advent of bio-plasma technology, the scope of application is expanding. Recently, In addition, high-density miniaturization with handheld is required for sophisticated procedures when irradiated directly or treated with non-standard conditions. Rosen-type PZT is a device with a structure that generates high voltage plasma by achieving voltage transformation through electro-mechanical coupling using piezoelectric effect.and is used in portable plasma generating devices as an advantage to increase energy density relatively. In this paper, Rosen-type PZT was modeled using equivalent circuits and was carried out and a plasma generating device for medical application was designed and prototype tested. Prototype plasma generating device generates an output voltage of 5.8 kV with 12V input power and is designed to operate at high voltage by applying the half-bridge topology power converter. The results of the study confirmed the availability of various medical devices, such as plasma jets or direct exposure equipment.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.