• Coupled systems mechanics
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• v.7 no.2
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• pp.211-232
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• 2018

In this work we present an upscaling technique for multi-scale computations based on a stochastic model calibration technique. We consider a coarse-scale continuum material model described in the framework of generalized standard materials. The model parameters are considered uncertain, and are determined in a Bayesian framework for the given fine scale data in a form of stored energy and dissipation potential. The proposed stochastic upscaling approach is independent w.r.t. the choice of models on coarse and fine scales. Simple numerical examples are shown to demonstrate the ability of the proposed approach to calibrate coarse scale elastic and inelastic material parameters.

• Earthquakes and Structures
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• v.6 no.3
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• pp.317-334
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• 2014

The work is concerned with an investigation of the advantages stemming from the use of lightweight aggregate concrete in earthquake-resistant reinforced concrete construction. As the aseismic clauses of current codes make no reference to lightweight aggregate concrete beams made of lightweight aggregate concrete but designed in accordance with the code specifications for normal weight aggregate concrete, together with beams made from the latter material, are tested under load mimicking seismic action. The results obtained show that beam behaviour is essentially independent of the design method adopted, with the use of lightweight aggregate concrete being found to slightly improve the post-peak structural behaviour. When considering the significant reduction in deadweight resulting from the use of lightweight aggregate concrete, the results demonstrate that the use of this material will lead to significant savings without compromising the structural performance requirements of current codes.

• Structural Engineering and Mechanics
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• v.31 no.5
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• pp.481-506
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• 2009

The present study is concerned with the stochastic linear free vibration study of laminated composite plate embedded with piezoelectric layers with random material properties. The system equations are derived using higher order shear deformation theory. The lamina material properties of the laminate are modeled as basic random variables for accurate prediction of the system behavior. A $C^0$ finite element is used for spatial descretization of the laminate. First order Taylor series based mean centered perturbation technique in conjunction with finite element method is outlined for the problem. The outlined probabilistic approach is used to obtain typical numerical results, i.e., the mean and standard deviation of natural frequency. Different combinations of simply supported, clamped and free boundary conditions are considered. The effect of side to thickness ratio, aspect ratio, lamination scheme on scattering of natural frequency is studied. The results are compared with those available in literature and an independent Monte Carlo simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.295-299
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• 1999

The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.450-453
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• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.477-479
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• 2006

Carbon films was grown on Si substrates using the method of electrolysis for methanol liquid. Deposition parameters for the growth of the carbon films were current density for the electrolysis, methanol liquid temperature and electrode spacing between anode and cathode. We examined electrical resistance and the surface morphology of carbon films formed under various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes was relatively wider. We found that the electrical resistance in the films was independent of both current density and methanol liquid temperature for electrolysis. The temperature dependence of the electrical resistance in the low resistance carbon films was different from one obtained in graphite.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.26-29
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• 1999

The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10$^{-12}$ A independent of gate and drain voltage because the electric field is weakened by the increase of the depletion region width near the drain region. It is shown that the offset regions behave as a series resistance and reduce lateral and vertical electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.402-405
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• 1999

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.440-443
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• 2000

The (Sr$_{1-x}$ Ca$_{x}$) thin films ale deposited OR Pt-Coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained at SCT15 thin film. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The temperature properties of the dielectric loss have a stable value within 2% independent of the substitutional contents of Ca.Ca.