• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.338-343
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• 2015

Dye sensitized solar cells (DSSCs), which is one of the contending renewable energy sources, have the problem of low efficiency. To improve the efficiency, the fast electron transport and long electron lifetime are required. In this study, one-dimensional sodium hexatitanate, which is expected to have an advantageous structure for electron transports, was synthesized and the feasibility of the material on DSSC was tested. Its physical properties were characterized by the SEM, XRD, and BET method. The dye adsorption and solar cell properties were also characterized. In addition to the expectation of fast electron transport, sodium hexatitanate showed longer electron lifetime: This means sodium hexatitanate can improve the DSSC efficiency. However, it showed low current and voltage because of the low surface area leading to the low amount of dye adsorbed. Therefore, it should be mixed with titanium oxide with high surface area for the optimal performance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.675-679
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• 2004

The existing conjugated blue emitting material polymer which has been used for the two-wavelength method white-emission has good stability and low operating voltage as merits, but the imbalanced carrier transport has been indicated as problem area. We have introduced a novel blue emitting material having perylene moiety unit with hole transporting ability and blue emitting property and triazine moiety unit with electron transporting ability into the same host chain. We have synthesized N-[p-(perylen-3-y1)pheny1]methacry1 amide (PPMA) monomer and [N-(2,4-dipheny1-1,3,5-triazine)pheny1 methacry1 amide] (DTPM) monomer having blue light-emitting unit and electron transport unit, respectively by three steps. A novel non-conjugated blue emitting material Poly[N -[p­(perylene-3-y1) pheny1] methacry1 amide-co-N-[P-(4,6-dipheny1-1,3,5-triazine-2-y1]pheny1]methacry1 amide] (PPPMA-co-DTPM) copolymer having electron transporting unit was synthesized by the solution polymerization of PPMA and DTPM monomers with an AIBN initiator and showed high yield of $75{\%}$. It was very soluble in common organic solvents, and the fabrication of the thin film using a spin coating method was very simple. The PPPMA exhibited a good thermal stability.

• 폴리머
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• 제25권5호
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• pp.719-727
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• 2001

유기광도전체에 있어서의 액정은 종래의 분자 배향성을 가지지 않는 비정성 고체계와는 달리 분자 배향성을 가지기 때문에 분자 사이의 질서도가 높아지게 되고, charge-carrier의 hopping을 방해하는 hopping site의 공간적인 틈이 작아져 고 이동도의 특성을 가질수 있다. 본 연구에서는 유기광도전체의 전하 수송층에 액정5CT를 혼합하여, charge-carrier수송특성에 있어서의 액정5CT의 영향을 관찰하였다. 액정5CT를 함유한 유기광도전체는 액정의 혼합비가 증가함에 따가 초기전위는 증가하였으며, 암감쇄는 감소하는 경향을 나타내었다. 감도는 5CT를 TNF와 OXD 각자에 대하여 40 wt%로 혼합한 시료의 경우에 가장 우수하게 나타났다. 형광거동을 관찰한 결과, 이는 전하수송재료와 액정5CT의 전하 수송착체에 의한 것으로, 액정5CT를 TNF와 OXD 각각에 대하여 40 wt%로 혼합한 시료의 경우가 다른 시료에 비해 전하 수송착체가 가장 잘 형성되어, 성공을 잘 수송하기 때문으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.367-368
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• 2009

BSCCO HTS(High Temperature Superconductor) could be applied to superconducting cable, magnet and motor, using its hight critical properties. Especially, superconducting cable has a hight possibility of practical use due to the possibility of low voltage and high capacity transmission caused by its lower power loss than copper cable. In this paper, the transport characteristics of BSCCO superconducting cable, according to the change of BSCCO superconducting cable's accident point at phase $0^{\circ}$ and $45^{\circ}C$, were analyzed and compared each other. Consequently, when the accident was occur the resistance of the HTS was higher at the point phase $0^{\circ}$ than $45^{\circ}$ which means it will cause much higher load on the HTS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.69-72
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• 2003

This paper describes the information for the difference between two-term and multi-term approximation of the Boltzmann. In previous paper, we calculated the electron transport coefficients in pure Oxygen and Argon gases by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W and $N{\cdot}D_L$) in pure Oxygen and Argon gases for range of E/N values from 0.01~500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data for a range of E/N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.73-76
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• 2003

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in pure Xenon gas by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W, $N{\cdot}D_L$ and $D_{L/{\mu}}$) in pure Xenon gas for range of E/N values from 0.01 ~ 500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data by L. S. Frost and A. V. Phelps for a range of E/N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.864-867
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• 2003

Since the development of semiconductors, various related research has been conducted. During research, silicon diodes have been commonly used because of their simplicity and low cost in the manufacturing process. This research deals with p-n junction threshold voltages from silicon diodes due to transport current at a cryogenic temperature. At a cryogenic temperature(77K) we could get minimum current which junction threshold voltage becomes constant. This is experimented on GPIB communication and it consist of programmable current source, multimeter which gauge the threshold voltage in a very low temperature caused by transport current from 5nA to 1mA and $LN_2$(77K) for coolant. This experiment is programmed all process using Measurement studio(Lab window) tool.

• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.273-279
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• 2006

High-$T_c$ superconducting (HTSC) power cable is one of the interesting parts in power application using HTSC wire. However, its stacked structure makes the current distribution between conducting layers non-uniform due to difference between self inductances of conducting layers and mutual inductances between two conducting layers, which results in lower current transmission capacity of HTSC power cable. In this paper, the transport current distribution between conducting layers was investigated through the numerical analysis for the equivalent circuit of HTSC power cable with a shield layer, and compared with the case of without a shield layer. The transport current distribution due to the increase of the contact resistance in each layer was improved. However, its magnetization loss increased as the contact resistance increased. It was confirmed from the analysis that the shield layer was contributed to the improvement of the current distribution between conducting layers if the winding direction and the pitch length were properly chosen.