• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.295-299
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• 1999

The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.539-542
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• 2004

전자기기의 발달과 더불어 정보통신분야의 발달로 고주파 대역에서 우수하고 안정적인 Ni-Zn 페라이트를 제조하기 위해, Ni(니켈)의 일부를 코발트(Co)로 치환하여 결정자기이방성 상수 값을 증가시켜, 공명 주파수를 고주파 대역으로 높이고자 하였다. Co 함량이 증가함에 따라 투자율은 감소하는데, 이는 결정자기 이방성 상수를 크게 하여 공명 주파수를 높이는 결과를 보였으며, x=0.05에서 투자율 75, 공명 주파수 20MHz의 특성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% O$_2$+99% Ar). The Zone-melting temperature was decreased about 120$^{\circ}C$ from 1060$^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted Nd$\sub$1+x/Ba$\sub$2-x/Cu$_3$O$\sub$y/ prepared under low oxygen partial pressure was distinctively improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.52-55
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• 1997

In this study, PLZT stock solutions were prepared by sol-gel processing to fabricate PLZT thin films. The stock solutions were spin-coated on ITO-glass and the film were annealed by rapid thermal annealing(RTA). The variation of tile crystallographic structure of the thin films and the phase transition with respect to it were observed using Raman spectra. Raman result showed that the band of spectra are broad as the amount of Zr substitution increased and specially, abrupt change occurs in the raman spectra upon crossing the tetragonal-rhombohedral phase boundry at 2/55/45 PLZT thin film. So, the fact that the crystallographic structure was transitted from tetragonal to rhombohedral structure was certified.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.300-301
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• 2007

$Mg_4(Nb_{2-x}V_x)O_9$ (MNV) ceramics have been prepared by a hydrothermal method. Low-temperature sintering of $Mg_4(Nb_{2-x}V_x)O_9$ (MNV) by V substitution for Nb was discussed in this study. A $Q{\cdot}f_0$ value of 103,297 GHz with a ${\varepsilon}_r$ of 12.56 and a ${\tau}_f$ of $-10.53\;ppm/^{\circ}C$ was obtained when x=0.0625 after sintering at $1100^{\circ}C$ for 5 h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.603-604
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• 2005

A precise ratio transformer which is used to a ratio arm of a precise impedance measurement bridge at low frequencies was developed. The developed ratio transformer has the ratio taps of 1:1, 2:1, $\cdots$, to 10:1 in order to measure the primary impedance standards by substitution and special winding techniques for 10:1 ratio that is used frequently for impedance build up/down. The calibration results of the transformer has inphase and quadrature error of $0.073\times10^{-6}$ and $0.14\times10^{-6}$ respectively at 1.6 kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.301-303
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• 2006

In this study, multilayer piezoelectric transformer were manufactured using the PZN-PMN-PZT ceramic and then the electrical characteristics were investigated. The voltage step-up ratio of multilayer piezoelectric transformer showed the maximum value in the vicinity of 78.16kHz and increased according to the increase of load resistance. When the output impedance coincided with the load resistance, piezoelectric transformer showed the temperature increase of about $20^{\circ}C$ at the output power of 12W. The results, the multilayer transformer manufactured using the low temperature sintered PZN-PMN-PZT ceramics can be stably driven for step-up transformers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.5-8
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• 1995

The crystal structure and dielectric propoerties of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ Ceramics were investigated. Sn substitution reduced the volitility of PbO due to the decrease of the unit cell. The crystal structure of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ Ceramics was refined based on Orthorhombic Cmmm space group, More than two types of phase transition were observed, These phase transitons make the posicitve and negative temperature coefficient of dielectric constant of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$.

• 자원리싸이클링
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• 제32권3호
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• pp.9-17
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• 2023

폐리튬인산철 전지의 양극재로부터 리튬을 효율적으로 회수하기 위하여 활발하게 연구 중이며, 이는 리튬 자원의 지역 편재성 및 가격 변동성을 해소하고 환경오염 문제를 해결할 수 있다. 폐리튬인산철 전지로부터 리튬을 침출 및 회수하기 위하여 동형치환 침출 공정을 사용하였다. 상대적으로 저렴한 염화철 에칭액을 침출제로 사용하여 LFP의 Fe²⁺를 동형 치환하여 리튬을 침출하였다. 또한 추가적인 첨가제 및 추출제 없이 염화철 에칭액만을 사용하였으며, 염화철 에칭액을 LFP 이론적 몰 비 대비 0.7배, 1.0배, 1.3배, 그리고 1.6배로 하여 리튬의 침출율을 비교하였다. LFP 몰 비 대비 1.3배의 조건에서 약 98%로 가장 높은 리튬 침출율을 보였고 이후 침출액은 NaOH를 투입하여 pH 조절을 통하여 철을 제거하였다. 철이 제거된 용액으로부터 탄산리튬을 합성하였고, 그 분말 특성을 확인하였다.