• 제목/요약/키워드: material recovery

검색결과 885건 처리시간 0.031초

측방향하중(側方向荷重)에 의한 벼줄기의 역학적특성(力學的特性)에 관한 연구(硏究)(II) -크리이프 및 회복 거동- (Mechanical Properties of Rice Plants Under the Transverse Loading -Creep and Recovery Behavior-)

  • 허윤근
    • 농업과학연구
    • /
    • 제23권2호
    • /
    • pp.233-241
    • /
    • 1996
  • The mechanical properties of biological materials depend on numerous factors. The majority of these relationships are still unknown today, especially with regard to their quantitative characteristics. The reason is that biological materials constitute biomechanical systems of very complex construction, whose behavior cannot be characterized by simple physical constants, as for example can that of engineering materials. The objectives of this investigation were to determine the compression creep and recovery properties of rice stalks at various levels of applied load The compression creep and recovery behavior of the rice stalk could be predicted precisely by rheological model which approached closely to the measured values. But the coefficients of the Burgers recovery model were different from those of the creep model. The Steady state creep behavior occurred at the higher level of force and the logarithmic creep behavior occurred at the lower level of force. The mechanical model being expected the creep behavior in relation with the level of applied load, which was well explained that the rice stalk might be visco-elastic material.

  • PDF

Effect of Amplified Spontaneous Emission on the Gain Recovery of a Semiconductor Optical Amplifier

  • Lee, Hojoon
    • 한국광학회지
    • /
    • 제29권1호
    • /
    • pp.32-39
    • /
    • 2018
  • The impact of the amplified spontaneous emission (ASE) on the gain recovery time of a bulk semiconductor optical amplifier (SOA) is investigated. The gain-recovery time is obtained by determining the time evolution of the gain, carrier density, and ASE in an SOA, after the propagation of a short pump pulse and continuous-wave (CW) probe of gain dynamics. In the simulation, a wide-band-semiconductor model, which can be characterized by the material gain coefficient over a wide wavelength range, is used, because the gain bandwidth of a practical SOA is very wide. The pump pulse and counterpropagating CW probe field are considered in the simulation, with the ASE noise spectrum equally divided.

Kinetics and Equilibrium Isotherm Studies for the Aqueous Lithium Recovery by Various Type Ion Exchange Resins

  • Won, Yong Sun;You, Hae-na;Lee, Min-Gyu
    • 한국재료학회지
    • /
    • 제26권9호
    • /
    • pp.498-503
    • /
    • 2016
  • The characteristics of aqueous lithium recovery by ion exchange were studied using three commercial cation exchange resins: CMP28 (porous type strong acid exchange resin), SCR-B (gel type strong acid exchange resin) and WK60L (porous type weak acid exchange resin). CMP28 was the most effective material for aqueous lithium recovery; its performance was even enhanced by modifying the cation with $K^+$. A comparison to $Na^+$ and $H^+$ form resins demonstrated that the performance enhancement is reciprocally related to the electronegativity of the cation form. Further kinetic and equilibrium isotherm studies with the $K^+$ form CMP28 showed that aqueous lithium recovery by ion exchange was well fitted with the pseudo-second-order rate equation and the Langmuir isotherm. The maximum ion exchange capacity of aqueous lithium recovery was found to be 14.28 mg/g and the optimal pH was in the region of 4-10.

Effects of electronic energy deposition on pre-existing defects in 6H-SiC

  • Liao, Wenlong;He, Huan;Li, Yang;Liu, Wenbo;Zang, Hang;Wei, Jianan;He, Chaohui
    • Nuclear Engineering and Technology
    • /
    • 제53권7호
    • /
    • pp.2357-2363
    • /
    • 2021
  • Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.

YBCO coated conductors(CCs)의 안정화재 두께 변화에 따른 quench/recovery 특성 분석에 관한 연구 (Quench/recovery test results of the YBCO coated conductors(CCs) having various stabilizer thicknesses)

  • 권나영;김현성;김광록;김경준;임성우;김혜림;현옥배;이해근
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제11권3호
    • /
    • pp.10-14
    • /
    • 2009
  • Since a stabilizer of YBCO coated conductor (CC) plays a very important role of bypassing over-current and transferring heat generated in the moment of fault, it is one of big issues to determine the material of the stabilizer and its dimension for the high performance of the HTS power application system. Especially, in the case of a superconducting fault current limiter (SFCL), which requires it to react immediately to the occurrence of fault, characteristics of stabilizer are decisive in limiting fault current and recovering superconducting properties during and after quenching. In this paper, the quench / recovery characteristics of YBCO CCs with various thickness of stabilizer were analyzed. The quench/recovery test carried out at 20 $V_{rms}$, 5 cycles (60 Hz) and results showed that as the thickness of the stabilizer decreased, both the final approach temperature and the recovery time decreased.

ABS와 PS 혼합(混合) 폐플라스틱 재질분리(材質分利)를 위한 마찰하전형정전선별(摩擦荷電型靜電選別) 기술개발(技術開發) (Development of Triboelectrostatic Separation Technique for Material Separation of ABS and PS Mixed Plastic Waste)

  • 이은선;백상호;김수강;최우진;진호일;전호석
    • 자원리싸이클링
    • /
    • 제22권6호
    • /
    • pp.33-40
    • /
    • 2013
  • 다양한 분야에 사용되고 있는 플라스틱은 최근 환경문제가 대두되면서 재활용 이슈가 부각되고 있다. 본 연구에서는 마찰하전형정전선별을 적용하여 ABS(Acrylonitrile Butadiene Styrene)와 PS(Polystyrene)의 혼합된 폐플라스틱으로부터 ABS를 회수하기 위한 재질분리 연구를 수행하였다. 하전물질의 재질선정을 위한 하전특성연구결과, ABS재질이 대상시료인 ABS와 PS의 혼합 폐플라스틱의 재질분리에 효과적인 하전재질로 확인되었다. 선정된 하전물질을 적용하여 마찰하전형정전선별을 수행한 결과, 공급전압세기 20 kV, 분리대위치 양극방향 2 cm 그리고 상대습도 30%에서 ABS의 품위와 회수율이 각각 99.5%와 92.5%인 결과를 얻어, ABS와 PS의 혼합 플라스틱의 재활용을 위한 재질분리 기술을 확립하였다.

세라믹 패키지를 이용한 표면 실장형 다이오드의 제작과 특성 평가 (Manufacture and Characteristic of Surface Mounted Device Type Fast Recovery Diode with Ceramic Package)

  • 전명표;조상혁;조정호;김영익;유인기
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
    • /
    • pp.221-221
    • /
    • 2006
  • The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.

  • PDF

양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작 (Fabrication of Ultra Fast Recovery Diodes using Proton Irradiation Technique)

  • 이강희;김병길;이용현;백종무;이재성;배영호
    • 한국전기전자재료학회논문지
    • /
    • 제17권12호
    • /
    • pp.1308-1313
    • /
    • 2004
  • Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

절연 층이 고려된 YBCO 박막형 선재의 저항 증가 경향 및 회복 특성에 관한 연구 (Study on Resistance Increasement Tendency and Recovery Characteristics of YBCO Thin-film Wire Using Insulation Layer)

  • 두호익;김용진;이동혁;한병성;송상섭;이종수;한상철;이정필
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
    • /
    • pp.190-190
    • /
    • 2010
  • The resistance and recovery properties of the YBCO thin-film wire according to the existence and thickness of an insulting layer, and the kinds of stabilization layers, were analyzed at 90 K, 180 K and 250 K. In this study, YBCO thin-film wires with different stabilizing layers and with insulating layers were examined in terms of their various characteristics, such as quenching occurrence, spread, and distribution, based on their resistance increase trends and their recovery from quenching, and the results were qualitatively explained. The results of this study on the characteristics of YBCO thin-film wires' superconducting and normal-conducting phase changes are expected to be useful in designing superconducting power machines and in improving their performance.

  • PDF

산소 플라즈마 처리된 반도전성 실리콘 고무의 회복현상 및 접착특성 (Adhesion and Recovery of Semiconductive Silicone Rubber by Oxygen Plasma Treatment)

  • 이기택;황선묵;홍주일;서유진;황청호;허창수
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
    • /
    • pp.147-148
    • /
    • 2005
  • In this work, recovery of semiconductive silicone rubber on oxygen plasma treatment was investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, surface methyl groups is removed and an oxidized layer containing Si atoms bound to 3 or 4 oxygens appears. The surface is later covered by a very thin layer due to migration of low-molecular-weight components from the bulk, resulting in decreasing the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber these results are probably due to reorientation of polar groups or migration of low-molecular-weight.

  • PDF