• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.355.2-355.2
• /
• 2014

Zirconium nitride (ZrN)는 높은 열적, 화학적 특성과 우수한 기계적 강도, 낮은 전기 저항성 때문에 절삭공구, 의료용품 등으로 널리 사용된다. 특히 물리증착법 (PVD)으로 증착 할 경우 실제 hardness보다 높은 특성을 가지고 내마모성과 고온에서 hardness가 우수한 것으로 알려져 있다. 본 실험에서는 물리증착법 중 하나인 rf magnetron sputter를 사용하여 질소 유량에 따른 zirconium nitride 박막을 증착하였다. 그 후, $600^{\circ}C$, N2 분위기에서 후열처리를 진행하였고, 후열처리에 따른 박막의 nano-electrotribology 특성 변화를 관찰하기 위해 nano-indenter를 사용하였다. 측정결과, 질소 유량이 0, 0.5, 5 sccm으로 변함에 따라 증착된 박막의 hardness는 18.62, 15.64, 13.58 GPa로 각각 감소되었으며, elastic moduls도 210.43, 185.15, 171.52 GPa로 감소하였다. 이는 증착 과정에서 과포화된 N2 가 후열처리 과정에서 빠져 나오는 것으로 알 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.833-841
• /
• 1998

ZnO thin films on glass substrate were deposited by on RF mangetron reaction sputter with various grgon/oxygen gas ratios and sbustrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, AFM, XPS, RBS, and electrometer(keithley 617). All films showed a strong perferred orientation along the x-axis on glass substrate, and the chemical stoichiometry of Zn/)=1/1.0 was obtained at Ar/$O_2$ =50/50. Surface roughness and resistivity depended on the argon/oxygen gas ratio. The minimum surface roughness of 20$\AA$ and maximum resistivity of $10^8$ $\Omega$ cm were achieved at Ar/$O_2$=10/90.

• Journal of Information Display
• /
• v.12 no.2
• /
• pp.89-92
• /
• 2011

Advanced static DC magnetron sputtering methods based on the magnet wobbling technique were investigated to achieve highly uniform and homogeneous metallization layers. The novel split sputter mode (SSM) method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties, while keeping a high production throughput. The effectiveness of theSSMtechnique was demonstrated through copper-coated large-area substrates.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1414-1415
• /
• 2006

Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.159-159
• /
• 1999

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.191-191
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.273-273
• /
• 2009

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.05a
• /
• pp.102-102
• /
• 2001

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.04a
• /
• pp.146.1-146
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.75-75
• /
• 1996