• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2002년도 춘계학술대회논문집
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• pp.13-22
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• 2002

This paper presents characteristics of CrOx thin-film Strain gauge pressure sensors, which were deposited on SUS630 diaphragm by DC reactive magnetron sputtering in an argon-Oxide atmosphere(Ar-(10%)$O_2$). The optimized condition of CrOx thin-film strain gauges were thicknessrange of 2500$\AA$ and annealing condition ($350^{\circ}C$, 3 hr) in Ar-10 %$O_2$deposition atmosphere. Under optimum conditions, the CrOx thin-films for strain gauge is obtained a high resistivity, $\rho$=156.7$\mu$$\Omega$cm, a low temperature coefficiect of resistance, TCR=-86 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 15. The output sensitivity of pressure sensor obtained is 2.46㎷/V and the maximum non-linearity is 0.3%FS and hysteresis is less than 0.2%FS. The output characteristics of pressure transmitter obtained is 4~20㎃ and total accuracy is less than $\pm$0.5%FS. In those conclusions, CrOx thin film pressure sensors is quite satisfactory for many applications in industrial electronics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1572-1575
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• 1996

A new type $Cu_{x}N/Cu/Cu_{x}N$ thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the $Cu_{x}N$ thin film was in the range of $20{\sim}40(N)$ under the conditions of the $N_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450V and substrate bias voltage of -100V. The adhesive force was depended on the $N_2$ partial pressure, discharge current and substrate bias voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Journal of Korean Vacuum Science & Technology
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• 제1권1호
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• pp.24-29
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• 1997

Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $\gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $\gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $\gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{\circ}C$. The surfaces of $\gamma$-Mo$_2$N films deposited up to 40$0^{\circ}C$ were smooth, but the film deposited at 50$0^{\circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.

• 열처리공학회지
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• 제23권5호
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• pp.245-248
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Ni/ITO (INI) multilayer films were deposited on the glass substrates with a reactive magnetron sputtering system without intentional substrate heating and then the influence of the Ni interlayer on the methanol gas sensitivity of ITO and INI film sensors were investigated. Although both ITO and INI film sensors have the same thickness of 100 nm, INI sensors have a sandwich structure of ITO 50 nm/Ni 5 nm/ITO 45 nm. The changes in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm were measured. It is observed that the INI film sensors show the higher sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the INI film sensor have the potential to be used as improved methanol gas sensors.

• 한국표면공학회지
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• 제42권2호
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• pp.73-78
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• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.152-155
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• 2006

Carbon nitride ($CN_X$) films were prepared by reactive RF magnetron sputtering system at various deposition conditions and the C-V characteristics of MIS(metal - insulator - semiconductor) capacitors that have the structures of Al/$CN_x$/p-Si/Al and Al/$CN_x$/$Si_3N_4$/p-Si/Al were investigated. The resistivity of carbon nitride was above $2.40{\times}10^8{\Omega}{\cdot}cm$ at room temperature. The C-V plot showed a typical capacitance-voltage characteristics of semiconductor insulating layers, while it showed hysterisis due to interface charges. Amorphous carbon nitride (a-$CN_x$) films, that have relatively high resistivity and low dielectric constant could be useful as interlayer insulator materials of VLSI(very large-scale integration) and ULSI(ultra large-scale integration).

• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.