• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.138-143
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• 1998

We have investigated the magnetic properties of FeBN and FeSiN films deposited by RF magnetron reactive sputtering system. It was investigated that the compositions of B, Si and N were the main factors influencing the soft magnetic properties and film resistivity. The addition of small amount of N significantly improve the soft magnetic properties and electrical resistivity. The FeBN and FeSiN films were showed good soft magnetic properties which were Hc<1 Oe, Bs:19~19 kG and $\mu$'>1000 values. The composition of films were $Fe_{75}(BN)_{25},\;Fe_{78}(SiN)_{22}$ and resistivity was 100~120 $\mu$$\Omega$-cm. but, futher increase in B, Si and N concentration degraded the soft magnetic properties due to formation of nitride such as $Fe_4N$ compound.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.288-292
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• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.6
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• pp.593-600
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• 2013

The asymmetric pulsed DC reactive magnetron sputtering system is widely used for the high quality plasma sputtering process such as a thin film deposition. In asymmetric pulsed DC power supply a reverse voltage is applied to the target periodically to minimize arc discharging effect. When sputtering in the mid-frequency range (20-350 kHz), the periodic target voltage reversals suppress arc formation at the target and provide long-term process stability. Thus, high quality, defect-free coatings of these materials can now be deposited at competitive rates. In this paper, a new style asymmetric pulsed DC power supply including mid-transformer is presented. In the proposed, an energy recovery circuit is adopted to reduce the mutual inductance of the transformer. As a result, the system dynamics of the voltage control loop is increased highly and the non-linear voltage boosting effect of the conventional system is removed. This work was proved through simulation and laboratory based experimental study.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.1
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• pp.8-16
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• 2003

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.73-78
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• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.226-230
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• 2005

This paper describes the photocatalytic degradation properties by oxygen partial pressure for TiO$_2$ thin films fabricated by dc magnetron reactive sputtering. And the structural, chemical, optical and photocatalytic properties were investigated at various analysis system. When TiO$_2$ thin film was made at deposition time of 120 min and Ar:O$_2$ ratio of 60:40, the best properties were obtained. That results were as follows: thickness; 360∼370 nm, gram size; 40 nm, optical energy band gap; 3.4 eV and Benzene conversion in the photocatalytic degradation; 11 %.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.6-9
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• 2002

Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of $T/R_{sh}$ and $T^{10}/R_{sh}$ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and $8.95({\times}10^{-3}\Omega^{-1})$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.