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Effect of Sputtering Parameter on the Deposition Behavior of TiO2 Thin Film  

Kim, Eul-Soo (Dept. of Metallurgical & Materials Engineering, Gyeongsang National University)
Lee, Gun-Hwan (Dept. of Metallurgical & Materials Engineering, Gyeongsang National University)
Kwon, Sik-Chol (Dept. of Metallurgical & Materials Engineering, Gyeongsang National University)
Ahn, Hyo-Jun (Korea Institute of Machinery & Materials)
Publication Information
Transactions of the Korean hydrogen and new energy society / v.14, no.1, 2003 , pp. 8-16 More about this Journal
Abstract
$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.
Keywords
$TiO_2$thin films; Magnetron sputtering; Anatasen phase; Hydrogen production;
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