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http://dx.doi.org/10.4313/TEEM.2002.3.2.006

Figure of Merit for Deposition Conditions in ITO Films  

Kim, H.H. (Electronic Department, Doowon Technology College)
Cho, M.J. (Department of Electrical Engineering, Chungbuk National University)
Park, W.J. (Department of Electrical Engineering, Chungbuk National University)
Lee, J.G. (Department of Electrical Engineering, Chungbuk National University)
Lim, K.J. (Department of Electrical Engineering, Chungbuk National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.3, no.2, 2002 , pp. 6-9 More about this Journal
Abstract
Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.
Keywords
ITO; Magnetron sputtering; PET substrate; Metallic alloy target; Figure of merit;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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