• 제목/요약/키워드: magnetron anode

검색결과 62건 처리시간 0.038초

Co-sputtering 방법으로 제작한 IAZO 박막의 특성과 이를 이용하여 제작한 인광 OLED의 특성 분석 (Characteristics of phosphorescent OLED fabricated on IAZO anode grown by co-sputtering method)

  • 배정혁;김한기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.60-61
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    • 2007
  • IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

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Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices: Synthesis and Application Test

  • Park, Young-Ran;Nam, Eun-Kyoung;Boo, Jin-Hyo;Jung, Dong-Geun;Suh, Su-Jeong;Kim, Young-Sung
    • Bulletin of the Korean Chemical Society
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    • 제28권12호
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    • pp.2396-2400
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    • 2007
  • Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

산소량에 따른 $SnO_x$ 박막의 음극 특성 (Anode Characteristics of $SnO_x$ Films with Various Oxygen Contents)

  • 문희수;성상현;김영일;박종완
    • 전기화학회지
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    • 제3권3호
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    • pp.178-181
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    • 2000
  • 본 실험에서는 리튬 이차 박막전지의 음극물질로 주석 산화물 박막을 RF magnetron sputter을 이용하여 증착하였다. RF power와 공정 압력을 각각 $2.5W/cm^2$와 10mTorr로 고정시키고 박막 중의 산소량을 조절하기 위해 산소 분압을 $0\~100\%$까지 조절하여 실험하였으며, 산소량을 더 줄이기 위해 주석 금속 칩을 사용하여 조절하였다. 산소량을 줄여 줌으로써 비가역적으로 형성되는 리튬산화물의 량을 줄이고 고용량의 $SnO_x$음극 박막을 제조하였다. 그 중 $SnO_{1.43}$일 때 가장 큰 가역용량(약$ 500{\mu}Ah/cm^2{\mu}m$) 얻었다.

리튬 이온 전지용 Si/Mo 다층박막 음극의 전기화학적 특성 (Electrochemical Characteristics of Si/Mo Multilayer Anode for Lithium-Ion Batteries)

  • 박종완
    • 한국재료학회지
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    • 제16권5호
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    • pp.297-301
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    • 2006
  • Si/Mo multilayer anode consisting of active/inactive material was prepared using rf/dc magnetron sputtering. Molybdenum acts as a buffer against the volume change of the Silicon. Multilayer deposited on RT (reversible treatment) copper foil current collector to enhance adhesion between Silicon and copper foil. Deposited Silicon was identified as an amorphous. Amorphous has a relatively open structure than crystal structure, thus prevents the lattice expansion and has many diffusion paths of Li ion. When deposited time of Silicon and Molybdenum is 30 second and 2 second respectably, electrode has more capacity and good cycle stability. A 3000 nm thick multilayer was maintained 99% of the initial capacity (1624 $mAhg^{-1}$) after 100 cycles. As the increase of the multilayer thickness (4500 nm, 6000 nm), Si/Mo mutilayer anodes show aggravation cycle stability.

비대칭 마크네트론 스퍼터링을 이용한 이리듐 산화물 박막의 합성과 전기 화학적 특성분석 (Electro-Chemical Properties of Iridium Oxide Coated Ti Electrode Synthesized by Unbalanced Magnetron Sputtering Process)

  • 김성대;김상식;송진호
    • 한국표면공학회지
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    • 제40권5호
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    • pp.203-208
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    • 2007
  • Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

부하특성을 고려한 마그네트론 구동용 PS FB-ZVS PWM 컨버터의 설계 (A Design of PS FB-ZVS PWM Converter with Magnetron Load)

  • 이완윤;정교범;신판석
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 전력전자학술대회 논문집
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    • pp.360-363
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    • 2001
  • The conventional 60(Hz) power supply for driving magnetron in microwave oven has disadvantages of heavy weight and low efficiency due to 60(Hz) High Voltage Transformer(HVT), capacitor and the phase control of thyristors with open-loop controller. To alleviate these disadvantages, this paper proposes a 20(kHz) phase-shifted(PS) Full-Bridge(FB) Zero- voltage-Switched(ZVS) PWM converter to drive a 600(W) magnetron in an 1(kW) microwave oven and to control the average anode current.

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Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • 황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Effect of the substrate temperature on the properties of transparent conductive IZTO films prepared by pulsed DC magnetron sputtering

  • Ko, Yoon-Duk;Kim, Joo-Yeob;Joung, Hong-Chan;Son, Dong-Jin;Choi, Byung-Hyun;Kim, Young-Sung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.167-167
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    • 2010
  • Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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전자오븐을 이용한 간편하고 연속적인 마이크로파 발생 장치 개발 (Development of simple and continuous microwave source using a microwave oven)

  • 권기청;김재현;김정희;이효석;전상진;허승회;최원호
    • 한국진공학회지
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    • 제9권3호
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    • pp.290-295
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    • 2000
  • KAIST-TOKAMAK에서 재현성이 좋은 저항가열 플라즈마를 발생시키는데 필요한 전이온화(pre-ionization)에 응용하기 위해 2.45 GHz 마그네트론을 사용하여 간편한 마이크로파 발생장치를 개발하였다. 장치에 사용한 마그네트론은 출력 500 W, 주파수 2.45 GHz이며, 일반적인 가정용 전자오븐(microwave oven)에 사용된다. 기존의 가정용 마그네트론은 음극(cathode)과 양극(anode)사이에 걸리는 고전압이 60 Hz의 주기를 갖기 때문에 약 16ms마다 약 8 ms 동안만 주기적으로 마이크로파를 발생한다. 이 마그네트론을 사용하여 토카막 전이온화에 충분할 정도로 연속적으로 발생되는 마이크로파를 얻기 위해서 음극과 양극사이에 개량된 회로로 리플전압이 작은 DC 고전압(5 kV 1 A)을 인가하였다. 본 논문에서는 주기적으로 생성.소멸하는 ECH 플라즈마와 연속적인 ECH 플라즈마를 발생시켜 랑뮈어탐침과 광증배관(PMT)을 이용한 이온 포화전류와 $H_\alpha$/ 방출(emission)을 측정하여 마이크로파 발생장치의 특성을 조사하였다.

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Effects of indium tin oxide top electrode formation conditions on the characteristics of the top emission inverted organic light emitting diodes

  • Kho, Sam-Il;Cho, Dae-Yong;Jung, Dong-Geun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.714-716
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    • 2002
  • Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

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