• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.184-188
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• 2002

The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2X lots ions/$\textrm{cm}^2$ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.282-287
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• 2009

$Ni_xFe_{100-x}$ films with a thickness of about 100nm were deposited on Si(100) substrates at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Compositional, structural, electrical and magnetic properties of the films were investigated. $Ni_{67}Fe_{33}$, $Ni_{55}Fe_{45}$, $Ni_{50}Fe_{50}$, $Ni_{45}Fe_{55}$, $Ni_{40}Fe_{60}$ films are obtained by increasing the sputtering power of the Fe target. The films of x < 55 have BCC structure and show the phase transformation after annealing at the range of $300{\sim}450^{\circ}C$ for 2 h. On the other hand, the films of x < 50 have the mixed crystalline phases of BCC and FCC after the annealing treatment. The saturation magnetization was decreased initially by the phase transformation effect but then increased again after annealing at $450^{\circ}C$ due to the grain growth and crystallization of BCC phases.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.18-22
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• 2006

Effects of V substitution of Fe on the magnetic properties of $Fe_3O_4$ have been investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), conversion electron Mossbauer spectroscopy (CEMS), and vibrating sample magnetometry (VSM) measurements on sol-gel-grown films. XRD data indicates that the $V_xFe_{3-x}O_4$ films maintain cubic structure up to x=1.0 with little change of the lattice constant. Analyses on V 2p and Fe 2p levels of the XPS data indicate that V exist as $V^{3+}$ mostly in the $V_xFe_{3-x}O_4$ films with the density of $V^{2+}$ ions increasing with increasing V content. Analyses on the CEMS data indicate that $V^{3+}$ ions substitute tetrahedral $Fe^{3+}$ sites mostly, while $V^{2+}$ ions octahedral $Fe^{2+}$ sites. Results of room-temperature VSM measurements on the films reveal that the saturation magnetization for the x=0.14 sample is larger than that of $Fe_3O_4$, while it becomes smaller than that of $Fe_3O_4$ for $x{\geq}0.5$. The coercivity of the $V_xFe_{3-x}O_4$ films is found to increase with x, attributed to the increase of anisotropy by the substitution of $V^{2+}(d^3)$ ions into the octahedral sites.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.88-92
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• 2011

We grew $Zn_{0.4}Fe_{2.6}O_4$ thin films using Pulsed Laser Deposition and studied their crystal structure and magnetical characteristics as a function of growth temperature ($T_g$). For the film with $T_g=300^{\circ}C$, X-ray reflections from ${\alpha}-Fe_2O_3$ and ZnO were observed. However, when $T_g$ was increased from 300 to $500^{\circ}C$, crystal structure of inverse spinel was stabilized with the crystal orientation of $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$ without any detection of ${\alpha}-Fe_2O_3$ and ZnO phases. The surface morphology shows flattening behavior with increasing $T_g$ from 300 to $500^{\circ}C$. These observations indicate that Zn is substituted into tetrahedron A-site of the inverse-spinel $Fe_3O_4$. M-H curves exhibit clear ferromagnetism for the sample with $T_g=500^{\circ}C$ whereas no ferromagnetism is observed for the film with $T_g=300^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.42-47
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• 1995

FeN thin films for inductive recording heads were sputter deposited using RF diode sputtering mehtod from a pure iron target onto 7059 glass substrates, and their magnetic properties were measured. The magnetic properties were greatly affected by film thickness, gas pressure, sputter power and flow ratio of $N_{2}$ to Ar. Single layer FeN films with their thickness varied from $1,000\;{\AA}$ to $6,000\;{\AA}$ were doposited. 800 W sputter power, 3 mT gas pressure, $N_{2}$ to Ar flow ratio of 6.6 : 100 were the sputtering conditions. Up to 7 layers of FeN films having total thickness of $6,000\;{\AA}$ were deposited using $SiO_{2}$ of $30\;{\AA}$ thickness as intermediate layers and their coercivity and saturation magnetization were measured. The sputtering conditions were the same as those in the single layer films. Easy axis coercivity of the single layer FeN films gradually decreased as their thickness was increased, but for the films with their thicknesses above $3,000\;{\AA}$, the coercivity changed very little. As the number of the FeN layers were increased, the coercivity decreased We estimated the grain size of FeN films from the FWHM (Full Width at Half Maximum) of X-ray diffraction peaks. The grain size steadily decreased from about $200\;{\AA}$ to $120\;{\AA}$ as the number of layers were increased. Minimum hard axis coercivity of 0.4 Oe was obtained when the number of layers was four. Maximum relative permeability was 2,900 when the number of layers was three. The cut off frequeocy of the multilayer films were above 100 MHz.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.45 no.4
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• pp.29-34
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• 2008

Generally, for conventional 3-D Hall sensor it is general that the sensitivity for $B_z$ is about 1/10 compared with those for $B_x$ or $B_y$. Therefore, in this work, we proposed 3-D Hall sensor with new structures. We have increased the sensitivity about 6 times to form the trench using anisotropic etching. And we have increased the sensitivity for the $B_z$ by 80 % compared with those of $B_x$ and $B_y$ using deposition of the ferromagnetic thin films on the bottom surface of the wafer to concentrate the magnetic fluxes. Sensitivities of the fabricated sensor with Ni/Fe film for $B_x,\;B_y$, and $B_z$ were measured as 361mV/T, 335mV/T, and 286mV/T, respectively. It has also showed sine wave of Hall voltages over a $360^{\circ}$ rotation. A packaged sensing part was $1.2{\times}1.2mm^2$. The measured linearity of the sensor was within ${\pm}3%$ of error. Resolution of the fabricated sensor was measured by $1{\times}10^{-5}T$.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.23-27
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• 2006

By substituting Mn or Cr for Co in inverse spinel $CoFe_2O_4,\;Mn_xCo_{1-x}Fe_2O_4\;and\;Cr_xCo_{1-x}Fe_2O_4$ and thin films were prepared by sol-gel method and their structural and magnetic properties were investigated. X-ray diffraction indicates that the cubic lattice constant increase for the Mn substitution while it hardly changes for the Cr substitution. Substitution of $Mn^{2+}$ for octahedral $Co^{2+}$ sites can explain the increase of lattice constant in $Mn_xCo_{1-x}Fe_2O_4$. On the other hand, Substitution of $Cr^{3+}$ for octahedral $Co^{2+}$ and subsequent reduction of $Fe^{3+}$ ion into $Fe^{2+}$ are expected to happen. Mossbauer spectroscopy measurements on $Cr_xCo_{1-x}Fe_2P_4$ indicate the existence of tetrahedral $Fe^{2+}$ ions that are created through reduction of tetrahedral $Fe^{3+}$ ions in order to compensate charge imbalance happened by $Cr^{3+}$ substitution for octahedral $Co^{2+}$ sites. On the other hand, no $Fe^{2+}$ ions were detected by Mossbauer spectroscopy for $Mn_xCo_{1-x}Fe_2O_4$. A migration of $Fe^{3+}$ ions from octahedral to tetrahedral sites In $Mn_xCo_{1-x}Fe_2O_4$ was detected by Mossbauer spectroscopy for x>0.47. Vibrating sample magnetometry measurements on the samples at room temperature revealed that the saturation magnetization increases by Mn and Cr substitution for certain range of x, qualitatively explainable in terms of the comparison of spin magnetic moment among the related transition-metal ions.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.279-283
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• 2015

Ni (100 nm thick) was deposited onto synthesized diamonds to fabricate etched diamonds. Next, those diamonds were annealed at varying temperatures ($400{\sim}1200^{\circ}C$) for 30 minutes and then immersed in 30 wt% $HNO_3$ to remove the Ni layers. The etched properties of the diamonds were examined with FE-SEM, micro-Raman, and VSM. The FE-SEM results showed that the Ni agglomerated at a low annealing temperature (${\sim}400^{\circ}C$), and self-aligned hemisphere dots formed at an annealing temperature of $800^{\circ}C$. Those dots became smaller with a bimodal distribution as the annealing temperature increased. After stripping the Ni layers, etch pits and trigons formed with annealing temperatures above $400^{\circ}C$ on the surface of the diamonds. However, surface graphite layers existed above $1000^{\circ}C$. The B-H loop results showed that the coercivity of the samples increased to 320 Oe (from 37 Oe) when the annealing temperature increased to $600^{\circ}C$ and then, decreased to 150 Oe with elevated annealing temperatures. This result indicates that the coercivity was affected by magnetic domain pinning at temperatures below $600^{\circ}C$ and single domain behavior at elevated temperatures above $800^{\circ}C$ consistent with the microstructure results. Thus, the results of this study show that the surface of diamonds can be etched.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.1-6
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• 2008

Block copolymers spontaneously assemble into various nanoscale structures such as spheres, cylinders, and lamellar structures according to the relative volumn ratio of each macromolecular block and their overall molecular weights. The self-assembled structures of block copolymer have been extensively investigated for the applications such as nanocomposites, photonic crystals, nanowires, magnetic-storage media, flash memory devices. However, the naturally formed nanostructures of block copolymers contain a high density of defects such that the practical applications for nanoscale devices have been limited. For the practical application of block copolymer nanostructures, a robust process to direct the assembly of block copolymers in thin film geometry is required to be established. To exploit self-assembly of block copolymer for the nanotechnology, it is indispensible to fabricate defect-free self-assembled nanostructure over an arbitrarily large area.