• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.148-155
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• 1995

The low loss single-mode $Al_{0.042}Ga_{0.958}As/GaAs/Al_{0.042}Ga_{0.958}As$ strip-loaded waveguides had been designed using an effective index method and fabricated using a MOCVD technique and chemical wet etching method. The propagation loss and facet reflectivity were measured by the Fabry-Perot resonance method and sequential cleaving experiment at $1.31{\mu}m$ wavelength. As a result, the propagation loss is as low as 0.62 dB/cm and the facet refiectivity(R) equals to 0.299 for straight waveguides with width $ w=4.1{\mu}m$..

• Journal of Yeungnam Medical Science
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• v.19 no.2
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• pp.107-115
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• 2002

Purpose: Ga-67 scintigraphy has been used for the evaluation of tumors, especially lymphoma. Recently, Tl-201 and Tc-99m MIBI were also used to tumor imaging. Tl-201 and Tc-99m MIBI had better physiologic characteristics than Ga-67, so we studied 32 biopsy proven lymphoma patients (male 24, female 8, mean age 46 years) with Ga-67, Tl-201 or Tc-99m MIBI and compared the scan findings. Materials and Methods: Twenty-three of 32 patients were injected 74-111 MBq (2-3 mCi) of Tl-201, before chemotherapy and imaged with dual-headed SPECT (Prism 2000, Picker, USA) at 30 minutes after injection. Delayed images were obtained after 3 hr in 8 patients. Twenty seven of 32 patients were injected 740 MBq (20 mCi) of Tc-99m MIBI and imaged at 30 minutes after injection. 111-185 MBq (3-5 mCi) of Ga-67 was injected in 12 patients and imaged at 48 and 72 hours after injection. Twenty eight patients were diagnosed as non-Hodgkin's lymphoma and others were Hodgkin's lymphoma. Results: Twenty patients were positive on Tl-201 scan and 3 patients showed negative findings. One of these 3 patients, Tc-99m MIBI and Ga-67 scan were positive. Twenty two patients were positive on Tc-99m MIBI scan and 5 patients showed negative findings. One of these 5 patients, Tl-201 was positive and 2 were positive on Ga-67 scan. Ten of 12 patients showed positive findings on Ga-67 scan. The sensitivity of these agents were 83.3%, 87.0% and 81.5% for Ga-67, Tl-201 and Tc-99m MIBI, respectively. The sensitivity was highest in Tl-201 scan, but there were no significant differences among three tests. In this study, there was no significant difference of uptake ratios between early and delayed images of Tl-201. Conclusion: Scintigraphy with Tl-201 and Tc-99m MIBI in lymphoma patients have similar sensitivity with Ga-67.

• Journal of the Korean Society of Food Science and Nutrition
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• v.17 no.2
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• pp.115-124
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• 1988

This study was carried out to realize the effect of gibberllic acid$(GA_3)$, 1-naphthaleneacetic acid(NAA) and indole-3-acetic acid(IAA) on the biosynthesis of vitamin C. The relation between carbohydrate metabolism and vitamin C production in soybean sprouts was also investigated. Growth, vitamin C content, protein, galactonolactone dehydrogenase(GLD), ribulose diphosphate carboxylase(RuDpCO) and RNA level in the plastid and cytoplasm were determined. The effects of protein and respiratory inhibitors on the growth and vitamin C production were also examined. The most favourable growth of soybean sprouts was observed at the level of NAA $10^{-8}M,\;IAA10^{-6}M\;and\;GA_3\;10^{-5}M$ in the single treatment, respectively, and also favourable at levels of $GA_3\;10^{-5}M+NAA\;10^{-9}M\;and\;GA_3\;10^{-5}M+IAA\;10^{-9}M$ in the case of mixed treatment. The excellent growth was observed at the level IAA $10^{-6}M$ among all the single and mixed treatments. When the soybean sprouts were treated with NAA $10^{-8}M,\;IAA\;10^{-6}M\;GA_3\;10^{-5}M,\;GA_3\;10^{-8}M+IAA\;10^{-6}M,\;and\;GA_3\;10^{-5}M+IAA\;10^{-9}M$, the maximum growth rate was observed at the level of IAA $10^{-6}M$ and the conten of vitamin C was 24.26mg% which was 1.6 times higher than that of the control. RuDpCO was inhibited by the chloramphenicol at the concentration that did not inhibit the growth but the activities of NADP-GDH, GLD and vitamin C content were not affected. These results showed that the biosynthesis of viamin C had nothing to do with the activity of chloroplastic RNA but with cytoplasm. The highest vitamin C content was found at the the level of IAA $10^{-6}M$, where the GLD activity increased up 1.8 times of the control. The concentration of IAA $10^{-6}M$ promoted the biosynthesis of RNa and protein both in chloroplast and cytoplasm, especially in the cytoplasm. Thus it suggeted that IAA affected vitamin C biosynthesis by regulating RNA level in the cytoplasm. 2,4-Dinitrophenol as an uncoupler of oxidative phosphorylation did not inhibit the vitamin C biosynthesis, however, all of the respiratory inhibitors severely inhibited the growth and vitamin C biosynthesis.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.356-356
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• 2012

InGaN/GaN로 제작된 Blue chip의 파장에 따른 백색 LED의 성능 저하를 전기적, 광학적 특성을 고려하여 조사하였다. 4가지 파장으로 제작된 백색 LED Sample들은 60 mA, 75 mA, 90 mA의 주입 전류로 장 시간동안 스트레스를 주었다. 또한 형광체가 없는 상태와 있는 상태를 구분하여 패키지의 감쇠 특성을 확인하였다. Blue 피크 파장 437 nm, 주입전류 90 mA, 형광체가 있는 상태와 형광체가 없는 상태에서 패키지의 출력 광세기는 각각 20%, 36%까지 감소하였다. 이는 Blue Chip에서 출력되는 단파장이 페키지 몰드의 노화(황변)현상에 직접적인 영향을 주기 때문이다. 전기적 특성은 Blue chip의 파장영역에 의존하지 않고, 스트레스 시간에 따른 LED내부 저항이 커지는 현상을 확인하였다. 따라서 InGaN/GaN로 제작된 백색 LED의 장 수명을 얻기 위해서는 Blue chip의 출력 파장 영역과 페키지 몰드 재료 특성의 신뢰성 관계가 중요하다.

• Korean Journal of Microbiology
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• v.12 no.4
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• pp.188-193
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• 1974

Effects of GA and IAA on the respiratory and photosynthetic activity of each growth stage during the synchronous culture of Chlorella ellipsodiea, were investigated. 1) GA ($2{\times}10^{-8}M$) affected most insignificantly on the respiratory activity of the stages Dn, Da, $L_1$, $L_2$, $L_3$-cells but only at $L_4$-cells treated with IAA($10^{-3}/M$) were promoted and $L_3$, $L_4$-cells were suppressed. With the treatment of GA-IAA the effects on respiration of eah stage cells were antagonistic. 2) Photosynthetic activity treated with GA during the each stage of Chlorella cells was promoted and IAA treated-cell were suppressed. The effect of GA-IAA upon the process of life cycle was also antagonistic. 3) It was revealed that respiratory and photosynthetic activity of Chlorella cells by the treatment of GA(($2{\times}10^{-8}M$) and IAA($10{\times}^{-3}/M$) had antogonistic effects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.149-156
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• 2002

Europium-activated $Ga_2O_3$ phosphor powders were prepared by homogeneous precipitation method. The resulting powders were characterized by means of TG/DTA, XRD, FT-IR and SEM, Two kinds of powders formed were the crystalline GaOOH and the amorphous-like $\gamma$-$Ga_2O_3$ phases. When the urea concentration was below 0,5 M, rod-like micrometer-sized GaOOH powders were formed. They were transformed via $\alpha$-$Ga_2O_3$ to $\beta$-$Ga_2O_3$ phases under heat treatment. On the other hand, the nanometer-sized $\gamma$-$Ga_2O_3$ powders were formed with urea concentrations higher than 1.0 M, and they were directly changed into $\beta$-$Ga_2O_3$.Photoluminescence (PL) spectra were observed at room temperature, and PL intensities of nanometer-sized $Ga_2O_3$ : $Eu^{3+}$ powders around 610 nm were higher than those of micrometer-sized ones.

• Korean Journal of Medicinal Crop Science
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• v.10 no.2
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• pp.75-81
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• 2002

Indoor seed treatments to elevate seedling emergence should be of value. The study was done to model the presown treatments of Platycodon grandiflorum seeds by evaluating the treatment effects of priming,$GA_3$, drying and water imbibition after drying on their germination and then their successive seed treatments on the basis of its seedling emergence. after priming using $Ca(NO_3)_2\;and\;GA_3$ treatment under their different concentrations and light quality illuminated for 12 hours a day were done separately and their two best results were compared to determine the better one, drying of imbibed seeds using the above best result and water imbibition of the dried seeds were successively done to check the rates of germination and emergence. In each treatment of priming and $GA_3$, the former best germination occurred at $Ca(NO_3)_2$ 150 mM done under 2 day darkness but the latter one did at 0.01 mM done under 12 hour a day red light forced for 3 days. Of the two best results from priming and $GA_3$ treatments, the latter result was shown higher germination rate. $GA_3$ treated seeds were best desiccated under $35^{\circ}C$ and 4 hour red light illumination. The germination rate of seeds dried after $GA_3$ treatment was enhanced as imibibed 2 days immediately before sowing. Seedling emergence of all 3 successive treatments, $GA_3$, drying and water imbibition before sowing was the greatest than the two others, only $GA_3$ treatment and the combination of $GA_3$ and drying, in which indicated that its presown seed treatment must follow the successive procedure of the above 3 ones.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.33-36
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• 2004

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.373-373
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• 2013

높은 효율의 InGaN/GaN 전광소자는 현대 조명 산업에 필수적인 역할을 하고 있다. 그러나 전광소자의 효율을 높이는 데에는 여러가지 한계들이 있다. 예를 들면 높은 전류에서의 효율저하, GaN 의 전위결함에 의한 비발광 재결합의 발생 등이 있다. 이러한 한계를 극복하고자 InGaN/GaN 전광소자의 효율을 높이기 위해 사파이어 기판의 표면을 거칠게 바꾸는 방법, 무분극 전광소자, 표면 플라즈몬 등 여러가지 많은 방법들이 개발되고 있다. c-plane InGaN/GaN LED 기반의 표면 플라즈몬 실험은 많은 연구가 수행되고 있으나, m-plane InGaN/GaN LED 기반의 표면 플라즈몬은 아직 연구가 진행되지 않았다. 본 실험의 목적은 표면 플라즈몬 효과를 이용하여 semi-polar InGaN/GaN LED의 광효율을 개선하는 것이다. 유기금속화학 증착 장비로 m-plane sapphire위에 $6{\mu}m$ 의 GaN 버퍼층을 증착하고 표면의 평탄화를 위해 $2{\mu}m$의 n-GaN을 증착하였다. 그 위에 3개의 다중양자우물 층을 증착하였고, 10 nm의 도핑이 되지않은 GaN를 증착하였다. 표면 플라즈몬 현상을 일으키기 위해 Ag박막을 10, 15, 20 nm 증착하여 급속 열처리 방법으로 $300^{\circ}C$에서 20분 열처리 하였다. 형성된 나노입자를 측정하기 위해 주사전자현미경으로 표면을 분석하였다. 표면플라즈몬에 의한 InGaN/GaN 광 세기를 측정하고자 여기 파장이 385 nm인 photoluminescence (PL) 를 사용하였다. 또한 내부양자효과의 증가를 확인하기 위해 PL을 이용하여 온도를 10~300 K까지 20 K 간격으로 광세기를 측정하였다. 향상된 내부 양자효과가 표면 플라즈몬에 의한 것임을 증명하기 위해 time-resolved PL을 이용하여 운반자 수명시간을 구하였다.