• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 합동 추계학술대회 논문집 정보 및 제어부문
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• pp.348-351
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• 2001

In this paper, the Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback(CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using TSMC $0.35{\mu}m$ CMOS n-well parameters. The simulation results show 138kHz cutoff frequency and 11.05mW power dissipation with a 3.3V supply voltage.

• 한국정보전자통신기술학회논문지
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• 제15권5호
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• pp.335-342
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• 2022

본 논문에서는 오디오 애플리케이션을 위한 단일 비트 3차 피드포워드 델타 시그마 변조기를 제안한다. 제안된 변조기는 저전압 및 저전력 애플리케이션을 위한 클래스-C 인버터를 기반으로 한다. 고정밀 요구 사항을 위해 레귤레이티드 캐스코드 구조의 클래스-C 인버터는 DC 이득을 증가시키고 저전압 서브쓰레스홀드 증폭기 역할을 한다. 제안된 클래스-C 인버터 기반 변조기는 180nm CMOS 공정으로 설계 및 시뮬레이션되었다. 성능 손실이 없으면서 낮은 공급 전압 호환성을 가지도록 제안된 클래스-C 인버터 기반 스위치드 커패시터 변조기는 높은 전력 효율을 달성하였다. 본 설계는 20kHz의 신호 대역폭 및 4MHz의 샘플링 주파수에서 동작시켜 93.9dB의 SNDR, 108dB의 SNR, 102dB의 SFDR 및 102dB의 DR를 달성하면서 0.8V 전원 전압에서 280μW의 전력 소비만 사용한다.

• 전자공학회논문지
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• 제54권2호
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• pp.53-57
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• 2017

본 논문에서는 의료 기기용 401MHz - 406MHz MedRadio 대역에서 사용하는 저잡음 증폭기를 제안한다. 제안한 저잡음 증폭기는 전류 재사용 gm-boosting 기술을 이용한 공통 게이트 증폭기 구조를 채택하여 기존의 gm-boosted 공통 게이트 증폭기에 비해 동일한 전력소모에서 더 높은 전압 이득과 더 낮은 잡음 지수 특성을 얻었다. 제안한 전류 재사용 gm-boosted 저잡음 증폭기는 $0.13{\mu}m$ CMOS 공정을 사용하여 설계하였고, 22 dB의 전압 이득, 2.95 dB의 잡음 지수, -17 dBm의 IIP3 특성을 보이며, 공급 전압 0.5 V에서 $170{\mu}W$의 전력을 소비한다.

• Journal of Power Electronics
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• 제18권1호
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• pp.11-22
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• 2018

This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.221-224
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• 2004

This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.498-498
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• 2013

Atmospheric Pressure Plasmas have pioneered a new field of plasma for biomedical application bridging plasma physics and biology. Biological and medical applications of plasmas have attracted considerable attention due to promising applications in medicine such as electro-surgery, dentistry, skin care and sterilization of heat-sensitive medical instruments [1]. Traditional approaches using electronic devices have limits in heating, high voltage shock, and high current shock for patients. It is a great demand for plasma medical industrial acceptance that the plasma generation device should be compact, inexpensive, and safe for patients. Microwave-excited micro-plasma has the highest feasibility compared with other types of plasma sources since it has the advantages of low power, low voltage, safety from high-voltage shock, electromagnetic compatibility, and long lifetime due to the low energy of striking ions [2]. Recent experiment [2] shows three-log reduction within 180-s treatment of S. mutans with a low-power palm-size microwave power module for biomedical application. Experiments using microwave plasma are discussed. This low-power palm-size microwave power module board includes a power amplifier (PA) chip, a phase locked loop (PLL) chip, and an impedance matching network. As it has been a success, more compact-size module is needed for the portability of microwave devices and for the various medical applications of microwave plasma source. For the plasma generator, a 1.35-GHz coaxial transmission line resonator (CTLR) [3] is used. The way of reducing the size and enhancing the performances of the module is examined.

• ETRI Journal
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• 제20권1호
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권6호
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• pp.292-296
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• 2002

A new sustain driving method for the AC PDP is presented. In this driving method, the voltage source is connected to a storage capacitor, this storage capacitor charges an intermediate capacitor through LC resonance, and the panel is charged from the intermediate capacitor indirectly. In this way, the current flowing into the AC PDP when the sustain discharge occurs is reduced because the current is indirectly supplied from a capacitor, a limited source of charge. Thus, the input power to the output luminance efficiency is improved. Since the voltage supplied to the storage capacitor is doubled through LC resonance, this method call drive an AC PDP with a voltage source of about half of the voltage necessary in the conventional driving methods. The experiments showed that this charge-controlled driving method could drive ail AC PDP with a voltage source of as low as 107V. Using a panel of the conventional structure, luminous efficiency of 1.28 lm/W was achieved.

• Journal of Power Electronics
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• 제16권1호
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• pp.277-286
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• 2016

This paper offers two Maximum Power Point Tracking (MPPT) systems for Photovoltaic (PV) applications. The first MPPT method is based on a fixed frequency Model Predictive Control (MPC). The second MPPT technique is based on the Predictive Hysteresis Control (PHC). An experimental demonstration shows that the proposed techniques are fast, accurate and robust in tracking the maximum power under different environmental conditions. A DC/DC converter with a high voltage gain is obligatory to track PV applications at the maximum power and to boost a low voltage to a higher voltage level. For this purpose, a high gain Switched Inductor Quadratic Boost Converter (SIQBC) for PV applications is presented in this paper. The proposed converter has a higher gain than the other transformerless topologies in the literature. It is shown that at a high gain the proposed SIQBC has moderate efficiency.