• Title/Summary/Keyword: low-temperature sintering Microstructure

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Effects of Li Dopant on Electrical Properties and Microstructure of ZnO Ceramics (Li Dopant가 ZnO 세라믹스의 전기적 특성과 미세 구조에 미치는 영향)

  • Jun, Min-Chul;Koh, Jung-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.4
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    • pp.282-285
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    • 2012
  • It is well known that Zinc Oxide (ZnO) is an attractive material for its various applications. ZnO has been mostly used as a transparent conducting oxide in liquid crystal displays, solar cells due to its advantages of low cost, high productivity, and excellent electrical conductivity. Notably, flexible-dye-sensitized solar cells (DSSCs) based on polyethylene terephthalate (PET) substrates require low temperature sintering processing conditions. Therefore, low temperature processing conditions have been strongly required for transparent conducting film applications. In this paper, we prepared low temperature-sintered ZnO ceramics employing Li as a sintering aid.

Microstructure and Microwave Dielectric Properties of Glass $(La_2O_3-B_2O_3-TiO_2)$/Ceramic Composites ($(La_2O_3-B_2O_3-TiO_2)$ 세라믹 조성에서의 미세 조직 과 마이크로 유전체 특성)

  • Jung, Byung-Hae;Hwang, Seong-Jin;Han, Tae-Hee;Kim, Hyung-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.138-138
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    • 2003
  • Low temperature co-fired ceramic (LTCC) technology offers significant benefits over the other established packaging technologies for high density, high microwave frequency, and fast signal application. Most conventional electroceraramics do not meet the basic requirements in respect of sinterability for LTCC technology. Attention is, therefore, focused on the role of glasses because of the capability they supply with lower sintering temperatures. In this study, commercial ceramic (MBRT-90) in the system BaO-N $d_2$ $O_3$-Ti $O_2$ (BNT: 40 ~ 80 wt%) and L $a_2$ $O_3$- $B_2$ $O_3$-Ti $O_2$ glass (LBT;60 ~ 20 wt%) were prepared. These glass/ceramic composites were evaluated for sintering behavior, phase evaluation, densities, interface reaction, crystallinity, microstructure and microwave dielectric properties. It was found that the addition LBT glass frits significantly lowered the sintering temperature to below 90$0^{\circ}C$ and as temperature increased (750~90$0^{\circ}C$) densification developed dynamically which was meant to be as over 95% of relative density. It is supposed that in the microstructure, the grain size was increased accompanying with the formation of different phases such as LaB $O_3$ and Ti $O_2$ under the condition of increasing sintering temperature. The sintered bodies represented applicable dielectric properties, namely 20 ~ 40 for $\varepsilon_{{\gamma}}$, ~ 10000 GHz for Q* $f_{0}$ and 10~80 ppm/$^{\circ}C$ for $\tau$$_{f}$. The results suggest that the composite is one of feasible candidates for the microwave use in LTCC technology.y.e use in LTCC technology.y.

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Dielectric Properties of Complex Microstructure for High Strength LTCC Material (고강도 LTCC 소재을 위한 복합구조의 유전특성)

  • Kim, Jin-Ho;Hwang, Seong-Jin;Sung, Woo-Kyung;Kim, Hyung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.309-309
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    • 2007
  • The LTCCs (low-temperature co-fired ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<$900^{\circ}C$ are required. In this study, we investigated with glass-ceramic composition, which was crystallized with two crystals. The microstructure, crystal phases, thermal and mechanical properties, and dielectric properties of the composites were investigated using FE-SEM, XRD, TG-DTA, 4-point bending strength test and LCR measurement. The starting temperature for densification of a sintered body was at $779{\sim}844^{\circ}C$ and the glass frits were formatted to the crystal phases, $CaAl_2Si_2O_8$(anorthite) and $CaMgSi_O_6$(diopside), at sintering temperature. The sintered bodies exhibited applicable dielectric properties, namely 6-9 for ${\varepsilon}_r$. The results suggest that the glass-ceramic composite would be potentially possible to application of low dielectric L TCC materials.

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Cathode Microstructure Control and Performance Improvement for Low Temperature Solid Oxide Fuel Cells (저온 고체산화물 연료전지용 공기극 미세구조 제어 및 성능개선)

  • Kang, Jung-Koo;Kim, Jin-Soo;Yoon, Sung-Pil
    • Journal of the Korean Ceramic Society
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    • v.44 no.12
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    • pp.727-732
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    • 2007
  • In order to fabricate a highly performing cathode for low-temperature type solid oxide fuel cells working at below $700^{\circ}C$, electrode microstructure control and electrode polarization measurement were performed with an electronic conductor, $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and a mixed conductor, $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3$(LSCF). For both cathode materials, when $Sm_{0.2}Ce_{0.8}O_2$ (SDC) buffer layer was formed between the cathode and yttria-stabilized zirconia (YSZ) electrolyte, interfacial reaction products were effectively prevented at the high temperature of cathode sintering and the electrode polarization was also reduced. Moreover, cathode polarization was greatly reduced by applying the SDC sol-gel coating on the cathode pore surface, which can increase triple phase boundary from the electrolyte interface to the electrode surface. For the LSCF cathode with the SDC buffer layer and modified by the SDC sol-gel coating on the cathode pore surface, the cathode resistance was as low as 0.11 ${\Omega}{\cdot}cm^2$ measured at $700^{\circ}C$ in air atmosphere.

Crystal structure, microstructure, and low-loss dielectric property of MgO-added (Ca,Sr)(Zr,Ti)O3 (MgO가 첨가된 (Ca,Sr)(Zr,Ti)O3의 결정구조, 미세구조 및 저손실 유전특성)

  • Do-Hyeok Lee;Kyoung-Seok Moon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.261-267
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    • 2023
  • Crystal structure, microstructure, and dielectric properties of the (Ca, Sr)(Zr, Ti)O3 (CSZT) system has been studied as a function of sintering temperature and MgO addition for microwave applications. A single-phase CSZT powder with the orthorhombic crystal structure was obtained by the solid-state reaction method. The powder compacts were sintered at 1200℃, 1300℃, and 1400℃ respectively. All the sintered samples had a single-phase orthorhombic crystal structure and grain size increased with sintering temperature. In the case of 1 mol% MgO addition, the orthorhombic crystal structure was the main phase; however, a secondary phase appeared during sintering at 1400℃, as determined by EDS analysis. At 1400℃, the undoped and MgO-doped CSZT had almost similar grain size distribution and densification but the grain size distribution became slightly narrow. The MgO-doped CSZT showed excellent low-loss dielectric properties: εr = 34.14, tanδ = 0.00047, τε = -3.58 ppm/℃ at 1 MHz.

Properties of Cu-Contained Spinel Ferrites with Various Cu Contents (Cu계 스피넬 페라이트의 Cu 함량에 따른 특성 변화)

  • 남중희;오재희
    • Journal of the Korean Ceramic Society
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    • v.33 no.11
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    • pp.1245-1252
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    • 1996
  • The charcteristics for the copper-contained spinel ferrites such as NiCu-and ZnCu ferrites with various copper content are investigated in this study which can provide a explanation for the behavior of copper in sintering at a low temperatuer. The bulk density and the grain size for these sintered ferrites were increased with the larger amount of copper in compositions. In microstructure of copper-contained spinel ferrites copper exists in the grain boundary which is sintering process. Electrical resistivity and frequency range with maximum Q-facor of NiCu-or ZnCu ferrites were decreased as increasing of copper content in ferrite composition.

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Microstructure and Positive Temperature Coefficient of Resistivity Characteristics of Na2Ti6O13-Doped 0.94BaTiO33-0.06(Bi0.5Na0.5)TiO3 Ceramics (Na2Ti6O13를 도핑한 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 세라믹스의 미세구조와 Positive Temperature Coefficient of Resistivity 특성)

  • Cha, Yu-Joung;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo;Lee, Wu-Young;Kim, Dae-Joon
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.575-580
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    • 2010
  • The microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of 0.1 mol%$Na_2Ti_6O_{13}$ doped $0.94BaTiO_3-0.06(Bi_{0.5}Na_{0.5})TiO_3$ (BBNT-NT001) ceramics sintered at various temperatures from $1200^{\circ}C$ to $1350^{\circ}C$ were investigated in order to develop eco-friendly PTCR thermistors with a high Curie temperature ($T_C$). Resulting thermistors showed a perovskite structure with a tetragonal symmetry. When sintered at $1200^{\circ}C$, the specimen had a uniform microstructure with small grains. However, abnormally grown grains started to appear at $1250^{\circ}C$ and a homogeneous microstructure with large grains was exhibited when the sintering temperature reached $1325^{\circ}C$. When the temperature exceeded $1325^{\circ}C$, the grain growth was inhibited due to the numerous nucleation sites generated at the extremely high temperature. It is considered that $Na_2Ti_6O_{13}$ is responsible for the grain growth of the $0.94BaTiO_3-0.06(Bi_{0.5}Na_{0.5})TiO_3$) ceramics by forming a liquid phase during the sintering at around $1300^{\circ}C$. The grain growth of the BBNT-NT001 ceramics was significantly correlated with a decrease of resistivity. All the specimens were observed to have PTCR characteristics except for the sample sintered at $1200^{\circ}C$. The BBNT-NT001 ceramics had significantly decreased $\tilde{n}_{rt}$ and increased resistivity jump with increasing sintering temperature at from $1200^{\circ}C$ to $1325^{\circ}C$. Especially, the BBNT-NT001 ceramics sintered at $1325^{\circ}C$ exhibited superior PTCR characteristics of low resistivity at room temperature ($122\;{\Omega}{\cdot}cm$), high resistivity jump ($1.28{\times}10^4$), high resistivity temperature factor (20.4%/$^{\circ}C$), and a high Tc of $157.9^{\circ}C$.

Microstructure and Piezoelectric Properties of Low Temperature Sintering PMW-PNN-PZT-BF Ceramics According to PNN Substitution (PNN 치환에 따른 PMW-PNN-PZT-BF 세라믹스의 미세구조와 압전 특성)

  • Sin, Sang-Hoon;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.90-94
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    • 2016
  • In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

The Study of Low Temperature Firing Glass-Ceramics Substrate in Lithium Fluorhectorite

  • Choi, J-H;Park, D-H;Kim, B-I;Kang, W-H
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 1999.11a
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    • pp.111-115
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    • 1999
  • The $Li_2O-MgO-MgF_2-SiO_2$glasses with addition of $B_2O_3$ were investigated in order to make glass-ceramics for low temperature firing substrate. Glasses were made by melting at $1450^{\circ}C$ in the electronic furnace and crystallized at $750^{\circ}C$. After the crystallization, crystal phases and microstructure were observed. The crystal phases were polycrystalline of lithium boron fluorphlogopite and lithium fluorhectorite. The crystal shape was changed to grande type from needle type with the increase in $B_2O_3$ contents. Average particle size of the glass-ceramics aftar water swelling was $3.77{\mu}{\textrm}{m}$. The optimum sintering temperature and sintering shrinkage of the substrate were $900^{\circ}C$ and 13.4vol%, respectively.

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The Study of Sintering Behavior and Piezoelectric Properties in $Pd_{(1-x)}$$Cd_x$[(Mn, Sb), Zr, $Ti]O_3$ Ceramics ($Pd_{(1-x)}$$Cd_x$[(Mn, Sb), Zr, $Ti]O_3$ 세라믹스의 소결 거동 및 압전 특성에 대한 연구)

  • 나은상;최성철
    • Journal of the Korean Ceramic Society
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    • v.37 no.4
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    • pp.395-401
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    • 2000
  • In this study, we chose the basic composition which indicated the best electrical properties by change of x content(0, 0.05, 0.1, 0.15, 0.2, 0.25 mol respectively) in xPb(Mn1/3Sb2/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 ceramics. And we substituted Cd2+ for Pb2+ site, then observed the sintering behavior, microstructure and electrical propertties according to the various sintering temperature. The basic composition was the 0.05PMS-0.95PZt, and it showed single perovskite phase and excellent properties. In case of Cd2+ substitution, we were able to sinter at 90$0^{\circ}C$ which was lower than conventional sintering temperature(1200~130$0^{\circ}C$). Especially, when the 2mol% substituted PMS-PZT specimens were sintered at 90$0^{\circ}C$ for 2h, we obtained the p=7.6g/㎤, kp=56%, Qm=520 and made sure of a position of Cd2+ substitution by observing lattice parameter, phase transition temperature. From this results, we could infer that because Cd2+ substituted fro A-site, low temperature sintering of Cd2+ substituted PMS-PZT without any loss of electrical properties shows its applicability for the piezoelectric ceramic transformer.

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