• Journal of Powder Materials
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• v.16 no.6
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• pp.442-448
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• 2009

$ZrB_2$-based composites are candidate materials for ultra-high temperature materials (UHTMs). $ZrB_2$ has become an indispensable ingredient in UHTMs, due to its high melting temperature, relatively low density, and excellent resistance to thermal shock or oxidation. $ZrB_2$ powders are usually synthesized by solid state reactions such as carbothermal, borothermal, or combined carbothermal reaction. SiC is added to this system in order to enhance the oxidation resistance of $ZrB_2$. In this study, $ZrB_2$?based composites were successfully synthesized and densified through two different processing paths. $ZrB_2$ or $ZrB_2$ 25 vol.%SiC was fully synthesized from oxide starting materials with reducing agents after heat treatment at 1400$^{\circ}C$. Besides, $ZrB_2$?20 vol.%SiC was fully densified with $B_4C$ as a sintering additive after hot pressing at 1900$^{\circ}C$. The synthesis mechanism and the effect of sintering additives on densification of $ZrB_2$ ?SiC composites were also discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.364-370
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• 1998

Boron-phoshor-silicate glass was fabricated on Si substrates by FHD(Flame Hydrolysis Deposition) The microstructrue of silica soot deposited at various conditon such as composition and substrate temperature was analysed by SEM. After consolidation the refractive index and composition of the silica layer were in-vestigated. For refractive index control B, P and Ge were used as additive elements while B and Ge oxides are easily mixed into $SiO_2$, P oxide($B_2O_3$) doping is difficult because of the volatile property due to low melt-ing point. Boron-phosphorous-silicate glass (BPSG) layer were fabricated using bertical torch and optimized flame temperature substrate temperature and distance of torch and substrate. P concentration of BPSG lay-er measured 3.3 Wt% and the consolidation temperature was lower than $1180^{\circ}C$. The measured refractive index of BPSG silica layer in $1.55\;\mu\textrm{m}$ wavelength was $1.4480{\pm}1{\times}10^{-1}$ and the thickness was $22{\pm}1\;\mu\textrm{m}$.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.808-815
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• 2005

[ $Bi_xCe_{l-x}O_{2-x/2}$ ](BD C : Bismuth Doped Ceria) powders with x = 0.1, 0.2, and 0.3 were synthesized using the Glycine Nitrate Process (GNP). They were then calcined at $500^{\circ}C$ for 2 hand sintered in a pellet or rod form at 900, 1000 or $1100^{\circ}C$ for 4 h for characterization as the alternative electrolyte material for intermediate temperature solid oxide fuel cells. The BDC powder consisted of a single phase of $CeO_2-Bi_2O_3$ solid solution in the as-synthesized state as well as in the as-calcined state with a mean powder size of 4.5nm in the former state and 6.5 - 10.1nm in the latter. On the contrary, the second phase of $\alpha-Bi_2O_3$ was observed to have been formed in the sinter with its amount increasing roughly with increasing temperature or $Bi_2O_3$ content. The BOC powder was superior in sinterability to other alternative electrolyte materials such as GDC, ScSZ, and LSGM with the minimum sintering temperature for a relative density of $95\%$ or larger as low as $1100^{\circ}C$. The ionic conductivity of BOC increased with $Bi_2O_3$ content and the maximum value of 0.119 S/cm was obtained at $800^{\circ}C$ for $Bi_{0.3}Ce_{0.7}O_{1.85}$.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.130-135
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• 2016

To alloy high melting point elements such as boron, ruthenium, and iridium with copper, heat treatment was performed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ at the temperature of $1200^{\circ}C$ in vacuum for 30 minutes. The microstructure analysis of the alloyed sample was confirmed using an optical microscope and FE-SEM. Hardness and trace element analyses were performed using Vickers hardness and WD-XRF, respectively. Diffusion profile analysis was performed using D-SIMS. From the microstructure analysis results, crystal grains were found to have formed with sizes of 2.97 mm. For the copper alloys formed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ the sizes of the crystal grains were 1.24, 1.77, and 2.23 mm, respectively, while these sizes were smaller than pure copper. From the Vickers hardness results, the hardness of the Ir-copper alloy was found to have increased by a maximum of 2.2 times compared to pure copper. From the trace element analysis, the copper alloy was fabricated with the expected composition. From the diffusion profile analysis results, it can be seen that 0.059 wt%, 0.030 wt%, and 0.114 wt% of B, Ru, and Ir, respectively, were alloyed in the copper, and it led to change the hardness. Therefore, we verified that alloying of high melting point elements is possible at the low temperature of $1200^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.469-476
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• 2019

A lead-free bulk ceramic having a chemical formula $Ba_{0.8}Ca_{0.2}(Ti_{0.8}Zr_{0.1}Ce_{0.1})O_3$ (further termed as BCTZCO) is synthesized using mixed oxide route. The structural, dielectric, impedance, and conductivity properties, as well as the modulus of the synthesized sample are discussed in the present work. Analysis of X-ray diffraction data obtained at room temperature reveals the existence of some impurity phases. The natural surface morphology shows close packing of grains with few voids. Attempts have been made to study the (a) effect of microstructures containing grains, grain boundaries, and electrodes on impedance and capacitive characteristics, (b) relationship between properties and crystal structure, and (c) nature of the relaxation mechanism of the prepared samples. The relationship between the structure and physical properties is established. The frequency and temperature dependence of the dielectric properties reveal that this complex system has a high dielectric constant and low tangent loss. An analysis of impedance and related parameters illuminates the contributions of grains. The activation energy is determined for only the high temperature region in the temperature dependent AC conductivity graph. Deviation from the Debye behavior is seen in the Nyquist plot at different temperatures. The relaxation mechanism and the electrical transport properties in the sample are investigated with the help of various spectroscopic (i.e., dielectric, modulus, and impedance) techniques. This lead free sample will serve as a base for device engineering.

• Journal of Hydrogen and New Energy
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• v.31 no.6
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• pp.596-604
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• 2020

Solid oxide electrolysis cell (SOEC) attracts much attention because of its high energy efficiency among many water-electrolysis technologies. SOEC operates at temperatures above 700℃, so that the water required for water-electrolysis must be supplied in the form of steam. When the steam to be supplied to the SOEC is generated by the SOEC system itself, an enormous amount of latent heat is required to vaporize the water, so additional energy must be supplied to the SOEC system. On the other hand, if the steam can be supplied from the outside, a small amount of energy is required to raise the temperature of the low temperature steam, so that the SOEC system can be operated without additional energy supply from outside, which enables efficient water-electrolysis. In this study, we figure out the size of heat exchanger for various steam temperature and effectiveness of heat exchanger, and propose the energy efficiency of the system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.965-974
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• 2022

Platinum anodes are widely used for metal oxides reduction in LiCl-Li₂O, however high-cost and low-corrosion resistance hinder their implementation. NiO-Li₂O ceramics is an alternative corrosion resistant anode material. Anode processes on platinum and NiO-Li₂O ceramics were studied in (80 mol.%) LiCl-(20mol.%)KCl and (80 mol.%)LiCl-(20 mol.%)KCl-Li₂O melts by cyclic voltammetry, potentiostatic and galvanostatic electrolysis. Experiments performed in the LiCl-KCl melt without Li₂O illustrate that a Pt anode dissolution causes the Pt²⁺ ions formation at 3.14 V and 550℃ and at 3.04 V and 650℃. A two-stage Pt oxidation was observed in the melts with the Li₂O at 2.40 ÷ 2.43 V, which resulted in the Li₂PtO₃ formation. Oxygen current efficiency of the Pt anode at 2.8 V and 650℃ reached about 96%. The anode process on the NiO-Li₂O electrode in the LiCl-KCl melt without Li₂O proceeds at the potentials more positive than 3.1 V and results in the electrochemical decomposition of ceramic electrode to NiO and O₂. Oxygen current efficiency on NiO-Li₂O is close to 100%. The NiO-Li₂O ceramic anode demonstrated good electrochemical characteristics during the galvanostatic electrolysis at 0.25 A/cm² for 35 h and may be successfully used for pyrochemical treating of spent nuclear fuel.