• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2011년도 춘계학술대회 논문집
• /
• pp.733-734
• /
• 2011

• 마이크로전자및패키징학회지
• /
• 제27권1호
• /
• pp.17-24
• /
• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Journal of Welding and Joining
• /
• 제30권6호
• /
• pp.113-119
• /
• 2012

Ultrasonic bonding is the novel packaging method for flip-chip with high yield and low-temperature bonding. The bonding module is a core part of the bonding machine, which can transfer the ultrasonic energy into the bonding spot. In this paper, we propose topology optimization technique which can make new design of boding modules due to the constraints on resonance frequency and mode shapes. The designed bonding module using topology optimization was fabricated in order to evaluate the bonding performance and reliable operation during the continuous bonding process. The actual production models based on the proposed design satisfied the target frequency range and ultrasonic power. The bonding test was performed using flip-chip with lead-free Sn-based bumps, the results confirmed that the bonding strength was sufficient with the designed bonding modules. Also the performance degradation of the bonding module was not observed after the 300-hour continuous process with bonding conditions.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2018년도 춘계학술대회 논문집
• /
• pp.102-102
• /
• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of Welding and Joining
• /
• 제15권4호
• /
• pp.136-142
• /
• 1997

In this study, the amorphous foil filler, thickness of 20 - $20~30\mu\textrm{m}$ was made to develop Cu-7.5wt%Mn-7.5wt%Si insert alloy(melting point temperature : solidus line 1003K, liquidus line 1070K). Liquid phase diffusion bonding of 304 stainless steels (STS304), is carried out successfully by using developed Cu-7.5Mn-7.5Si insert alloy. Bonding conditions are taken from bonding pressure of 5MPa, bonding temperatures from 1073K to 1423K varied within 50K and brazing holding times of 0, 30, 60 and 240 minutes. As the results, the tensile strength in the liquid phase diffusion bonding is a little bit lower than that in the solid phase diffusion bonding. The authors find out that the liquid phase diffusion bonding needs lower bonding pressure than the others. Therefore, the liquid phase diffusion bonding had an excellent brazability in which the bonding process showed the typical mechanism of diffusion bonding. In corresponding, the new developed insert alloy of low melting pointed Cu-7.5Mn-7.5Si makes possible brazing between the STS304.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.890-893
• /
• 2001

Two-layer self bonding insulating tape consists of butyl rubber(IIR ; Isobutylene-isoprene rubber) adhesive layer and polyethylene protective film. Butyl rubber have inherent characteristics such as resistance to corrosion and water, low temperature flexibility, excellent electrical insulating properties also resistance to environmental effect such as ozone and ultraviolet. Polyethylene film was used for the purpose of good insulating properties and resistance to ozone and ultraviolet. The tape was manufactured using extrusion and calender method.

• 한국재료학회지
• /
• 제19권11호
• /
• pp.613-618
• /
• 2009

We designed new compositions for lead free and low temperature sealing glass frit of $ZnO-V_2O_5-P_2O_5$ system, which can be used for PDP (Plasma Display Panel) or other electronic devices. The $ZnO-V_2O_5-P_2O_5$ system can be used as a sealing material at temperatures even lower than 430$^{\circ}C$. This system, however, showed lower bonding strength with glass substrate compared to commercialized Pb based sealing materials. So, we added $TiO_2$ as a promoter for bonding strength. We examined the effect of $TiO_2$ addition on sealing behaviors of $ZnO-V_2O_5-P_2O_5$ glasses with the data for flow button, wetting angle, temporary & permanent residual stress of glass substrate, EPMA analysis of interface between sealing materials and glass substrate, and bonding strength. As a result, sealing characteristics of $ZnO-V_2O_5-P_2O_5$ system glasses were improved with $TiO_2$ addition, but showed a maximum value at 5 mol% $TiO_2$ addition. The reason for improved bonding characteristics was considered to be the chemical interaction between glass substrate and sealing glass, and structural densification of sealing glass itself.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2003년도 International Symposium
• /
• pp.43-62
• /
• 2003

• 한국산학기술학회논문지
• /
• 제15권8호
• /
• pp.4756-4762
• /
• 2014

운전 중에 손상된 풍력발전기 블레이드는 전통적으로 에폭시 수지를 사용하는 수적층 공법으로 수리가 되어 왔다. 수적층 공법의 접착 강도는 높지 않으며 에폭시 수지는 낮은 온도에서 경화특성이 좋지 않은 단점을 가지고 있다. 본 논문에서는 손상된 블레이드 수리를 위하여 폴리에스터 수지를 사용하는 진공성형 공법을 제안한다. 진공성형 공법은 수지를 균일하게 분포시키는 장점이 있으며, 폴리에스터 수지는 저온에서 에폭시보다 경화가 더 잘되는 특성을 가지고 있다. 상온에서 수리가 이루어 질 때, 제안한 방법을 사용할 경우 전통적인 방법에 비하여 평균 접착강도가 최대 77.7% 상향되었다. 섭씨 15도와 5도에서 제안한 방법을 사용하여 수리가 이루어 질 때, 동일한 온도에서 전통적인 방법으로 수리한 경우보다 평균 접착강도가 향상되었다. 전통적인 방법을 사용하여 수리가 불가능한 저온에서도, 본 논문에서 제안한 방법을 사용할 경우 수리가 가능하게 되었고 상온에서 전통적인 방법으로 수리가 된 경우보다 더 좋은 접착강도를 얻을 수 있게 되었다.

• 한국산학기술학회논문지
• /
• 제14권2호
• /
• pp.567-572
• /
• 2013

냉난방을 사용하는 가정에서는 대부분 창문을 통해 열손실이 이루어지고 있는데 이를 방지하기 위해 Low-E 유리, 복층유리 또는 진공유리가 사용되고 있다. 본 논문에서는 진공유리 제작공정의 최종공정인 봉지공정에 대한 연구가 수행되었는데 기존 상압 접합이 아닌 진공챔버 내 접합이 고려되었다. 봉지과정의 효율성을 위해 진공챔버 내에서 히터온도에 따른 프리트 용융온도 및 접합시간을 최적화하였고 열응력으로 인한 유리 파손을 방지하기 위해 유리 예열온도를 최적화하였다. 이러한 결과를 바탕으로 성공적으로 진공유리를 제작하였고 측정된 열관류율은 약 $5.7W/m^2K$로 진공유리 내부압력은 약 $10^{-2}$ torr로 판명되었다.