• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 International Symposium
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• pp.261-278
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• 2003

Concepts.Wafer-Level Chip-Scale Concept with Handling Substrate.Low Accuracy Placement Layout with Isolation Trench.Possible Pitch of Interconnections down to $10{\mu}{\textrm}{m}$ (Sn-Grains).Wafer-to-Wafer Equipment Adjustment Accuracy meets this Request of Alignment Accuracy (+/-1.5 ${\mu}{\textrm}{m}$).Adjustment Accuracy of High-Speed Chip-to-Wafer Placement Equipment starts to meet this request.Face-to-Face Modular / SLID with Flipped Device Orientation.interchip Via / SLID with Non-Flipped Orientation SLID Technology Features.Demonstration with Copper / Tin-Alloy (SLID) and W-InterChip Vias (ICV).Combination of reliable processes for advanced concept - Filling of vias with W as standard wafer process sequence.No plug filling on stack level necessary.Simultanious formation of electrical and mechanical connection.No need for underfiller: large area contacts replace underfiller.Cu / Sn SLID layers $\leq$ $10{\mu}{\textrm}{m}$ in total are possible Electrical Results.Measurements of Three Layer Stacks on Daisy Chains with 240 Elements.2.5 Ohms per Chain Element.Contribution of Soldering Metal only in the Range of Milliohms.Soldering Contact Resistance ($0.43\Omega$) dominated by Contact Resistance of Barrier and Seed Layer.Tungsten Pin Contribution in the Range of 1 Ohm

• 한국군사과학기술학회지
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• 제27권1호
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• pp.15-23
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• 2024

In order to avoid the high observability due to the cavity resonance or electromagnetic wave leakages from the bridge of a battleship or the cockpit of an aircraft, this paper presents a transparent conductive oxide coated structure to prevent the incoming/outgoing electromagnetic waves. Currently, most of the RCS reduction technologies were focused on radar absorbing material such as paints based on conductive or magnetic materials in the fuselage, and there is not much research on countermeasures for achieving the low observability of materials that required optical transparency in actual weapon systems. In this study, the transmission/reflection and absorption performance of the ITO coated structure according to the change of the surface resistance of the transparent conductor were analyzed. Finally, the relationship between the electromagnetic and optical characteristics was established through fabrication and measurement.

• 한국산학기술학회논문지
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• 제2권2호
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• pp.7-10
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• 2001

보석이 포함된 장신구는 보석을 고정시키고 최대한 보석의 심미적 기능을 살리기 위해 후면부로부터 금속 난발(prongs)을 사용한다. 최근의 주얼리 산업은 빠른 유행주기 변화에 따른 신속한 개발을 위해 귀금속이 가능한한 적게 들어간 단발난집형의 목걸이 귀걸이류가 필요하다. 본 연구는 단발난집에 보석을 세팅하여 가볍고 안정적인 신개념의 목걸이를 개발하기 위하여 (주)아메스 개발부와 함께 단발난집 공정을 연구하였다. 보석의 측면부분에서 상측으로 중력방향에 대하여 직교하도록 트렌치를 가공하여 금속틀의 프롱을 접촉시키고 저융점을 갖는 소정의 Sn계솔더를 채용하여 트렌치부에 흡침된 솔더를 응고하여 접합을 완성하였다. 실시예로서 완성된 천연 자수정 스톤과 18K Au님의 단발난집에 적용한 결과 기존 제품에 비해 40% 이상의 Au 무게감소에 따른 비용절감과 우수한 착용감의 새로운 펜던트형 장신구의 개발이 가능하였다.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.162-169
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• 2017

Indium tin oxide (ITO) thin films show a low sheet resistance and high transmittance in the visible range of the spectrum. Therefore, they play an important role as transparent electrodes for flat panel displays. However, their resistivity is rather high for use as a transparent electrode in large displays. One way to improve electrical and optical properties in large displays is to use ITO/Ag/ITO multilayer films. ITO/Ag/ITO multilayer films have lower sheet resistance than single layer ITO films with the same thickness. Prior to the ITO/Ag/ITO multilayer experiments, optimal condition for thickness change are necessary. Their thicknesses were deposited differently in order to analyze electrical and optical properties. However, when optimal single film characteristics are applied to ITO/Ag/ITO multilayer films, other phenomena appeared. After analyzing the electrical and optical properties by changing ITO and Ag film thickness, ITO/Ag/ITO multilayer films were optimized. By combining ITO film at $586\;{\AA}$ and Ag film at 10 nm, the ITO/Ag/ITO multilayer films showed optimized high optical transmittance of 87.65%, and the low sheet resistance of $5.5{\Omega}/sq$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• 전기화학회지
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• 제2권3호
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• pp.130-133
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• 1999

본 연구에서는 음주 측정에 적용할 수 있는 다공질 실리콘층으로 된 저농도의 캐퍼시턴스형 알코올 가스 측정용 센서를 제작하고, 상온에서 그 특성을 측정하였다. 기존의 $SnO_2$등의 금속 산화물 반도체를 이용한 센서는 저농도의 알코올을 정확하게 검지하기에 어려울 뿐만 아니라 감도를 높이기 위해 $200\~400^{\circ}C$로 가열이 필요하였다. 이에 비해 다공질 실리콘층을 이용한 센서는 넓은 표면적을 갖고 있어 상온에서도 감도가 양호할 뿐만 아니라 집적화 센서로 제작이 용이한 점을 갖고 있다. 실험은 증류수에 희석한 알코올 수용액을 체온과 같은 $36^{\circ}C$를 비롯하여 25와 $45^{\circ}C$로 유지한 상태에서 0에서 $0.5\%$의 농도범위에 대해서 $0.05\%$의 간격으로 120 Hz와 1 kHz의 두 주파수에서 측정하였다. 그 결과, 양호한 선형성과 함께 120 Hz의 주파수에서 측정하였을 때, $0.1\%$의 알코올 농도의 증분마다 $25,\;36,\;45^{\circ}C$의 알코올 수용액의 온도에 대해 각각 1.1, 2.6 및 $4.6\%$로 캐퍼시턴스의 증가율을 보였다.

• 대한기계학회논문집B
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• 제36권5호
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• pp.539-543
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• 2012

셀룰로오스 EAPap 작동기는 생체 모방형 작동기의 하나로 생체적합하고 가볍고 비교적 낮은 전압에서도 큰 변위를 발생시킨다는 장점을 가지고 있다. 셀룰로오스를 재생하면서 셀룰로오스 파이버를 배열함으로써 압전 종이를 만들었다. 한편 셀룰로오스에 탄소나노튜브, 산화금속 나노분말, 전도성 고분자, 이온성 유체등을 물리적, 화학적으로 결합시켜 다양한 하이브리드 나노복합재를 만들었다. 본 논문에서는 셀룰로오스 EAPap 의 제조공정 및 이를 응용한 바이오센서, 화학센서, 유연트랜지스터, 그리고 작동기의 응용 디바이스에 대해 소개한다. 또한 셀룰로오스 EAPap 을 무선으로 구동하는 기술에 대해 소개한다. 이는 생체모방로봇, 정찰 등에 활용될 수 있다.

• 한국세라믹학회지
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• 제49권2호
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• pp.191-196
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• 2012

In this study, tin phosphate glass system($SnO_2-(1-x)P_2O_5-xB_2O_3$) that occur during the melting of the metal oxide inhibition of the oxidation reaction, and to reduce oxides of high melting temperature in the following three methods were melting. The first is the general way in the atmosphere, and the second by injecting $N_2$ gas under a neutral atmosphere, and finally in the air were melted by the addition of a reducing agent Melt in the atmosphere when the oxidation of the metal oxide is inhibited by low temperatures were melting. In addition, the deposition of crystals within glassy or inhibit devitrification phenomenon is also improved over 80% transmittance. This phenomenon, when the melting of glass, many of $Sn^{4+}$ ions are reduced to the $Sn^{2+}$ was forming oxides SnO, because it acts as a modifier oxide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.