• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.157-158
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• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.256-261
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• 2009

Hydrophilic and transparent $TiO_2$ thin film was fabricated by sol-gel method and the properties of contact angle, surface morphology, and transmittance were measured. In addition, surfactant Tween 80 was used for increasing the hydrophilic property of thin film. When the contents of Tween 80 in $TiO_2$ solution was 0, 10, 30, 50wt%, the contact angles of $TiO_2$ thin film were $41.4^{\circ}$, $18.2^{\circ}$, $16.0^{\circ}$, $13.2^{\circ}$, respectively. Fabricated $TiO_2$ thin film showed the photocatalytic property that decomposed methylene blue and decreased the absorbance of solution after UV irradiation. $TiO_2$ thin films fabricated with the solution of 30 wt% Tween 80 were deposited on glass (bare), antimony tin oxide (ATO), fluorine tin oxide (FTO), indium tin oxide (ITO) coated glass substrates, and the contact angle and transmittance of thin film was measured. The contact angles of thin films deposited on four substrates were $16.2\sim27.1^{\circ}$ and was decreased to the range of $13.2\sim17.6^{\circ}$ after UV irradiation, Especially, the thin films coated on ATO and FTO glass substrate showed high transmittance of 74.6% in visible range, respectively, and low transmittance of 54.2% and 40.4% in infrared range, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.1-5
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• 2003

The multi-layered OELDs(organic electroluminescent devices) were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The $Alq_3$ (tris-(8-hydroxyquinoline)aluminum) low molecule compound was used as the light emission layer. TPD(triphenyl-diamine) and $\alpha-NPD$ were used as the hole transport layer. CuPc (Copper phthalocyanine) was also used as the hole injection layers. In addition, QD2 (quinacridone2) organic material with $10\AA$ thickness was deposited in the $Alq_3$ emission layer to improve the luminance efficiency. The threshold voltage was about 7V for all devices. The luminance and efficiency of devices was improved by substitution the $\alpha-NPD$ for TPD as the hole as the hole transport layer. The luminance efficiency of the OELD sample with QD2 thin film in the $Alq_3$ emission layer was found to be 1.55 lm/W, which is about 8 times larger value compared to the sample without QD2 thin layer.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.28 no.3
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• pp.273-282
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• 2018

Objectives: Dustiness of nanomaterials is considered as exposure index of essential material. Research on dustiness of nanomaterial is needed to control exposure in workplaces. Method: Dustiness measurement using vortex shaker were installed in the laboratory. Nanomaterials, 1 g, was put in the glass test tube and shaked using vortex shaker. Aerosol dispersed was measured using scanning mobility particle sizer(SMPS) and optical particle counter(OPC). Mass concentration using PVC filter and cassette was measured and TEM grid sampling was conducted. Total particle concentration and size distribution were calculated. Image and chemical composition of particles in the air were observed using transmission electron microscopy and energy dispersive X-ray spectrometer. Eleven different test nanomaterials were used in the study. Results: Rank of mass concentration and particle number concentration were coincided in most cases. Rank of nanomateirals with low concentration were not coincided. Two types of fumed silica had the highest mass concentration and particle number concentration. Indium tin oxide, a mixture of indium oxide and tin oxide, had high mass concentration and particle number concentration. Indium oxide had very low mass concentration and particle number concentration. Agglomeration of nanoparticles in the air were observed in TEM analysis and size distribution. In this study, mass concentration and particle number concentration were coincided and two index can be used together. The range of dustiness in particle number concentration were too wide to measure in one method. Conclusion: Particle number concentration ranged from low concentration to high concentration depend on type of nanomaterial, and varied by preparation and amount of nanomaterial used. Further study is needed to measure dustiness of all nanomaterial as one reference method.

• Journal of Hydrogen and New Energy
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• v.22 no.3
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• pp.283-291
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• 2011

Polymer electrolyte membrane fuel cells (PEMFCs) use the bipolar plate of various materials between electrolyte and contact electrode for the stable hydrogen ion exchange activation. The bipolar plate of various materials has representatively graphite and stainless steel. Specially, stainless steels have advantage for low cost and high product rate. In this study, SUS 316 was effectively coated with 600 nm thick F-doped tin oxide (SnOx:F) by electron cyclotron resonance-metal organic chemical vapor deposition and investigated in simulated fuel cell bipolar plates. The results showed that an F-doped tin oxide (SnOx:F) coating enhanced the corrosion resistance of the alloys in fuel cell bipolar plates, though the substrate steel has a significant influence on the behavior of the coating. Coating SUS 316 for fuel cell bipolar plates steel further improved the already excellent corrosion resistance of this material. After coating, the increased ICR values of the coated steels compared to those of the fresh steels. The SnOx:F coating seems to add an additional resistance to the native air-formed film on these stainless steels.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.208-208
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• 2010

Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.415-418
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• 2011

Tin (IV) dioxide ($SnO_2$) has attracted much attention due to its potential scientific significance and technological applications. $SnO_2$ nanoparticles were prepared under low temperature and pressure conditions via precipitation from a 0.1 M $SnCl_4{\cdot}5H_2O$ solution by slowly adding $NH_4OH$ while rapidly stirring the solution. $SnO_2$ nanoparticles were obtained from the reaction in the temperature range from 130 to $250^{\circ}C$ during 6 h. The microstructure and phase of the synthesized tin oxide particles were studied using XRD and TEM analyses. The average crystalline sizes of the synthesized $SnO_2$ particles were from 5 to 20 nm and they had a narrow distribution. The average crystalline size of the synthesized particles increased as the reaction temperature increased. The crystalline size of the synthesized tin oxide particles decreased with increases in the pH value. The X-ray analysis showed that the synthesized particles were crystalline, and the SAED patterns also indicate that the synthesized $SnO_2$ nanoparticles were crystalline. Furthermore, the morphology of the synthesized $SnO_2$ nanoparticles was as a function of the reaction temperature. The effects of the synthesis parameters, such as the pH condition and reaction temperature, are also discussed.