• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2002.05b
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• pp.468-471
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• 2002

The present study was undertaken to Investigate the effects of low temperature and salicylic acid (SA) on chilling tolerance In acclimated and nonacclimated cucumber seedlings. Acclimation significantly affected survival and shoot dry weights. Injuries of acclimated seedlings at the third leaf stage were on the average smaller by half than those of the nonacclimated ones. Chilling caused a large increase in free proline levels, regardless of acclimation status. Exogenous treatment with SA resulted in improvement in growth and survival of acclimated, chilled seedlings, indicating SA and acclimation have common effects. Cycloheximide treatment In the presence of SA restored acclimation-induced chilling tolerance. An elevated proline level was observed in cold-treated and SA- treated plants and the level was more pronounced in the light than in the dark at chilled temperature, indicating that endogenous proline may play a role in chilling tolerance.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1113-1116
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• 2003

This review article gives a comprehensive compilation of recent developments in low temperature deposited poly Si flms, also known as microcrystalline silicon. The development of various ion energy suppression techniques for plasma enhanced chemical vapour deposition and ionless depositions such as HWCVD and expanding thermal plasma, and their effect on the material and solar cell efficiencies are described. A correlation between ef.ciency and the two most important process parameters, i.e., growth rate and process temperature is carried out. Finally, the application of these poly Si cells in multijunction cell structures and the best efficiencies worldwide by various deposition techniques are discussed.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.153-161
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• 1992

A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Asian-Australasian Journal of Animal Sciences
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• v.12 no.6
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• pp.908-913
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• 1999

This experiment was conducted in three trials to evaluate optimal ambient temperature for a novel milk replacer feeding system designed for early-weaned pigs, compared to commercial dry diets fed within a conventional hot nursery. A total of 165 PIC genotype pigs were weaned at $13.89{\pm}0.7$ days of age and allotted to one of two dietary treatments in three trials based on weight and litter origin. Each trial consisted of pigs fed dry diets (DD) and pigs fed milk replacer (MR) which was offered in one of 3 different ambient temperatures. Pigs fed milk replacer were housed in a specialized nursery building in which one half of each pen contained an enclosed hover that was thermostatically maintained at $32^{\circ}C$ while the exterior ambient temperature (where milk was fed) was set at either 17 (trial 1), 24 (trial 2) or $32^{\circ}C$ (trial 3). Pigs fed dry diets with the conventional nursery were maintained at $30^{\circ}C$ for each trial. From d 21 to d 49, all pigs were fed DD within a standardized hot nursery environment. During the first week (d 14-21), pigs fed MR showed increased ADG from 214% to 228% over control pigs fed DD (p<0.001), regardless of ambient temperature. As ambient temperature was increased from 17 to 24 to $32^{\circ}C$, ADG of MR-fed pigs was increased by 214%, 220% and 228% over those of pigs fed DD, respectively. ADFIs of MR-fed pigs at $17^{\circ}C$, $24^{\circ}C$, and $32^{\circ}C$ compared with pigs fed DD were increased by 108%, 139% and 164% from d 14 to d 21, respectively. Fed efficiency (G/F) of MR-fed pigs at $17^{\circ}C$, $24^{\circ}C$, and $32^{\circ}C$ compared with pigs fed DD were 199%, 162% and 139% of those of pigs fed DD, respectively. As ambient temperature increased, diarrhea scores showed a slight tendency to increase. The advantage of MR feeding was greater when the ambient temperature was higher, but G/F was impaired with increased ambient temperature. We conclude that ambient temperature within the specialized nursery influenced behavior, MR feed intake, and probably piglet energy expenditure. There were no differences between MR-fed and DD-fed pigs for ADG, ADFI and G/F in the subsequent growth period (d 21 to d 49, p>0.05). Maximal advantage of MR feeding was obtained at the intermediate ($24^{\circ}C$) ambient temperature during the overall period (p<0.05). Results from this experiment indicate that a milk replacer feeding system utilized in the early postweaning period can maximize pig growth performance, and that ADG, ADFI and G/F were affected by different ambient temperatures within MR-fed pigs. The high or low temperatures could not support the maximal growth of pigs fed MR.

• Korean Journal of Ecology and Environment
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• v.56 no.2
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• pp.151-160
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• 2023

Cyanobacteria Pseudanabaena strains are known to produce 2-MIB(odorous material) in freshwater systems, thereby causing problems in water use. However, their physiological responses to environmental factors in relation with 2-MIB production is not well explored. This study was conducted to evaluate the effect of temperature on the growth and 2-MIB production of Pseudanabaena redekei. The experimental cyanobacteria strains were separated from the Uiam Reservoir (North Han River) and cultured in the BG-11 medium. Temperature was set to 10, 15, 20, 25, and 30℃ for the experiment, in the reflection of the seasonal water temperature variation in situ. For each temperature treatment, cyanobacterial biomass(Chl-a) and 2-MIB concentration (intra-cellular and extra-cellular fractions) were measured every 2 days for 18 days. Both maximal growth and total 2-MIB production of P. redekei appeared at 30℃. While intra-cellular 2-MIB contents were similar (26~29 ng L^-1) regardless of treated temperatures, extra-cellular 2-MIB concentration was higher only in high temperature conditions (25~30℃), indicating that the extents of 2-MIB biosynthesis and release by P. redekei vary with temperature. The 2-MIB productivity of P. redekei was much higher in low-temperature conditions (10~15℃) than high temperature conditions (25~30℃). This study demonstrated that temperature was a critical factor contributing to 2-MIB biosynthesis and its release in cell growth (r=0.605, p<0.01). These results are important to understand the dynamics of 2-MIB in the field and thereby provide basic information for managing odorous material in drinking water resources.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1463-1465
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• 1994

The electrical characteristics of $Al/Ta_2O_5/Si$ metal-oxide-semiconductor (MOS) capacitors were studied. $Ta_2O_5$ films on p-type silicon had been prepared by ionized cluster beam epitaxy technique (ICBE). This $Ta_2O_5$ films have low leakage current, high breakdown strength and low flat band shift. In this research, a single crystalline cpitaxial film of $Ta_2O_5$ has been grown on p-Si wafer using an ICBE technique. The native oxide layer ($SiO_2$) on the silicon substrate was removed below $500^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high temperature deposition. $Ta_2O_5$ films formed by ICBE technique can be received considerable attention for applications to coupling capacitors, gate dielectrics in MOS devices, and memory storage capacitor insulator because of their high dielectric constants above 20 and low temperature process.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.34 no.2
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• pp.170-176
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• 1989

Experiments were conducted to find out varietal responses of low temperature; 14$^{\circ}C$ and 12$^{\circ}C$. at rooting stage of the recommended rice varieties in middle boreal area. The varieties showed discoloration resistance are Sobaegbyeo. Baegambyeo. Hwaseongbyeo Chiagbyeo. Dobongbyeo and Daeseongbyeo. varieties wi th no root growing under low temperature are Taebaegbyeo. Samgangbyeo. Baegyangbyeo. Pungsanbyeo and Sangpungbyeo. The varieties showed dark green leaf color and high rooting rate are Sangpungbyeo. Chiagbyeo. Odaebyeo. Unbongbyeo. Dobongbyeo. Hwaseongbyeo. Sobaegbyeo and Daeseongbyeo. light-green of leaf color and low rate of rooting are Taebaegbyeo. Baegyangbyeo. Samgangbyeo and Nongbaegbyeo.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.